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公开(公告)号：US4326199A
公开(公告)日：1982-04-20
申请号：US176836
申请日：1980-08-11
申请人： Roy W. Tarpley , Larry A. Rehn , Paul H. Davis
发明人： Roy W. Tarpley , Larry A. Rehn , Paul H. Davis
CPC分类号： G08B21/182 , Y10T137/7287
摘要： An autoreferencing liquid level sensing apparatus and method determines the presence of a liquid by observation of the convective cooling rate of a heated temperature sensor. The temperature measured by the temperature sensor is compared with an adapting temperature reference whose initial value is determined from the initial measured temperature and whose value increases during the heating at a rate proportional to the rate of heating of the temperature sensor and the initial temperature. This comparison enables discrimination of whether the convective cooling rate of the temperature sensor is above or below a predetermined level. Because the rate of convective cooling depends in large part on the thermal capacity of the fluid surrounding the sensor, the convective cooling rate determination allows discrimination of whether the temperature sensor is surrounded by a gas or a liquid, or surrounded by one of two immiscible liquids having differing thermal properties.
摘要翻译： 自动参考液面检测装置和方法通过观察加热温度传感器的对流冷却速度来确定液体的存在。 将由温度传感器测量的温度与适应温度参考值进行比较，其初始值由初始测量温度确定，并且其值在加热期间以与温度传感器的加热速率和初始温度成比例的速率增加。 该比较使得能够区分温度传感器的对流冷却速度是否高于或低于预定水平。 由于对流冷却速率在很大程度上取决于传感器周围的流体的热容量，所以对流冷却速度确定允许区分温度传感器是由气体还是液体包围，或者由两种不混溶液体之一包围 具有不同的热性能。
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公开(公告)号：US4321825A
公开(公告)日：1982-03-30
申请号：US146993
申请日：1980-05-05
申请人： Roy W. Tarpley , Larry A. Rehn , Paul H. Davis
发明人： Roy W. Tarpley , Larry A. Rehn , Paul H. Davis
摘要： A silicon temperature sensitive resistive element for employment as a convective cooling rate sensor. The convective cooling rate sensor comprises a small chip of silicon having an impurity ion cncentration level high enough to assure that the sensor exhibits an extrinsic positive temperature coefficient of resistance throughout a desired temperature range. The silicon chip is connected to a pair of metal electrodes. These metal electrodes have a cross-sectional area providing a desired rate of conductive cooling through these electrodes. A predetermined amount of electrical power is applied to the convective cooling rate sensor via the electrodes to cause ohmic self-heating of the sensor. The temperature of the sensor is determined by measuring the resistance of the sensor. The rate of temperature change is indicative of the rate of convective cooling of the sensor by the medium surrounding the sensor. This convective cooling rate sensor can be employed to determine which of two fluids of differing thermal conductivity surround the sensor or to determine the flow rate of a fluid of known thermal conductivity past the sensor.
摘要翻译： 用作对流冷却速率传感器的硅温敏电阻元件。 对流冷却速率传感器包括具有足够高的杂质离子浓度水平的硅的小芯片，以确保传感器在整个期望的温度范围内表现出外在的正电阻温度系数。 硅芯片连接到一对金属电极。 这些金属电极具有通过这些电极提供期望的导电冷却速率的横截面面积。 通过电极将预定量的电力施加到对流冷却速率传感器，以引起传感器的欧姆自加热。 通过测量传感器的电阻来确定传感器的温度。 温度变化率表示传感器周围的介质对传感器的对流冷却速率。 该对流冷却速率传感器可用于确定传感器周围具有不同热导率的两种流体中的哪一种，或者确定通过传感器的已知热导率的流体的流速。
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3.发明授权公开(公告)号：US07279891B1
公开(公告)日：2007-10-09
申请号：US11453533
申请日：2006-06-15
IPC分类号： G01R33/02
CPC分类号： G01R33/09 , B82Y25/00 , G01R33/093
摘要： A magnetic sensing method and apparatus include a plurality of bridge circuits, wherein each bridge circuit or element within a bridge is formed on a separate permalloy layer comprising a plurality of permalloy bridge runners. The permalloy bridge runners can be selected such that each permalloy bridge runner possesses a selectable wafer anisotropy to a length of the permalloy bridge runner in order to form a magnetic sensor based on the bridge circuits, maximize the magnetic sensitivity of the magnetic sensor, maximize the matching between bridges and independently control the wafer anisotropy through the use of multiple bridge circuits configured on separate permalloy layers.
摘要翻译： 磁感测方法和装置包括多个桥接电路，其中桥中的每个桥接电路或元件形成在包括多个坡莫合金桥接件的单独的坡莫合金层上。 坡莫合金桥接器可以被选择成使得每个坡莫合金桥接器具有对坡莫合金桥接浇道的长度可选择的晶片各向异性，以形成基于桥接电路的磁传感器，使磁传感器的磁敏度最大化， 桥之间的匹配，并且通过使用配置在单独的坡莫合金层上的多个桥接电路独立地控制晶片各向异性。
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公开(公告)号：US4320664A
公开(公告)日：1982-03-23
申请号：US124417
申请日：1980-02-25
申请人： Larry A. Rehn , Roy W. Tarpley
发明人： Larry A. Rehn , Roy W. Tarpley
CPC分类号： H01L29/84 , G01L9/0054 , G01L9/065 , Y10S73/04
摘要： A semiconductor pressure sensor employing the piezoresistive effect of single crystal silicon resistors to measure the flexure of a semiconductor diaphragm. In the preferred embodiment, a Wheatstone bridge composed of a first pair of resistors disposed on the center of the diaphragm and a second pair of resistors disposed on the periphery of the diaphragm is employed. Due to the nature of the diaphragm flexure, the first and second pairs of resistors exhibit piezoresistivity in opposite directions enabling pressure measurement with greater sensitivity. The diaphragm is mounted on and supported by a silicon clamp ring. The diaphragm and the clamp ring together form a unitary semiconductor structure. Because the piezoresistive effect which serves as a measure of the diaphragm flexure and hence as a measure of the pressure difference across the diaphragm is temperature dependent, the sensor also includes a temperature sensitive resistor, forming a part of the same unitary semiconductor structure, which provides a measure of the temperature of the piezoresistive elements. This measure of temperature enables external circuitry to correct for the temperature dependence of the piezoresistive effect thereby providing a pressure measurement of greater accuracy.
摘要翻译： 采用单晶硅电阻器的压阻效应测量半导体膜片的挠曲的半导体压力传感器。 在优选实施例中，采用由布置在隔膜中心上的第一对电阻器组成的惠斯通电桥和设置在隔膜周边上的第二对电阻器。 由于隔膜弯曲的性质，第一和第二对电阻在相反方向上显示出压阻性，从而能够以更高的灵敏度进行压力测量。 隔膜安装在硅夹环上并由硅夹环支撑。 隔膜和夹环一起形成一体的半导体结构。 由于作为膜片弯曲度的压阻效应，因此作为测量膜片两端的压差的压阻效应是温度依赖性的，所以传感器还包括形成相同单一半导体结构的一部分的温度敏感电阻器，其提供 测量压阻元件的温度。 这种温度测量使得外部电路可以校正压阻效应的温度依赖性，从而提供更高精度的压力测量。
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5.发明授权公开(公告)号：US07932182B2
公开(公告)日：2011-04-26
申请号：US11208177
申请日：2005-08-19
申请人： Yong-Fa A. Wang , Richard A. Davis , Larry A. Rehn
发明人： Yong-Fa A. Wang , Richard A. Davis , Larry A. Rehn
IPC分类号： H01L21/311
CPC分类号： B81B7/0006 , B81B2203/033 , B81B2203/0353 , B81C1/00619
摘要： A potassium hydroxide (KOH) etch process can produce deep high aspect ratio trenches in (110) oriented silicon substrates. The trenches, however, are perpendicular to the (111) direction of the silicon substrate's crystal lattice. The trenches are used to produce thermally isolating areas and through the wafer electrical connections. These structures can be produced in a cost effective manner because of the nearly ideal capabilities of the KOH etch process when it is applied to appropriate materials at appropriate orientations.
摘要翻译： 氢氧化钾（KOH）蚀刻工艺可以在（110）取向的硅衬底中产生深高的纵横比沟槽。 然而，沟槽垂直于硅衬底的晶格的（111）方向。 沟槽用于产生隔热区域并通过晶片电连接。 这些结构可以以成本有效的方式生产，因为当其以适当的取向施加到合适的材料时，KOH蚀刻工艺几乎理想的能力。
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公开(公告)号：US4319483A
公开(公告)日：1982-03-16
申请号：US124419
申请日：1980-02-25
摘要： An automated fluid flow measurement system employs two temperature sensitive silicon resistors having tracking temperature coefficients. The resistors have equal impurity concentration but different values of resistance. The first temperature sensitive resistor is employed to measure the temperature of a flowing fluid. The second temperature sensitive resistor is electrically heated to a temperature at a predetermined amount greater than the measured temperature of the fluid. Because the rate of heat transfer from the heated temperature sensitive resistor to the fluid depends upon the rate at which the fluid passes this temperature sensitive resistor, the power required in order to maintain the predetermined temperature difference in the second temperature sensitive resistor is a measure of the flow rate of the fluid. The automated fluid flow measurement system also includes an active self-balancing Wheatstone bridge circuit which automatically applies the required amount of power to the second temperature sensitive resistor in order to maintain the temperature difference and further automatically supplies a signal proportional to this applied power and therefore proportional to the flow rate.
摘要翻译： 自动化流体流量测量系统采用具有跟踪温度系数的两个温度敏感硅电阻器。 电阻器具有相同的杂质浓度但电阻值不同。 第一个温度敏感电阻用于测量流动流体的温度。 第二温度敏感电阻器被电加热至大于流体测量温度的预定量的温度。 因为从加热的温度敏感电阻器到流体的传热速率取决于流体通过该温度敏感电阻器的速率，所以为了保持第二温度敏感电阻器中的预定温度差所需的功率是 流体的流速。 自动化流体流量测量系统还包括一个有效的自平衡惠斯登电桥电路，其自动地将所需的功率量施加到第二温度敏感电阻器，以便保持温度差，并且进一步自动地提供与该施加的功率成比例的信号，因此 与流量成正比。
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