公开(公告)号：US07001854B1

公开(公告)日：2006-02-21

申请号：US10271333

申请日：2002-10-11

申请人： George D. Papasouliotis ,  Md Sazzadur Rahman ,  Pin Sheng Sun ,  Karen Prichard ,  Lauren Hall ,  Vikram Singh

发明人： George D. Papasouliotis ,  Md Sazzadur Rahman ,  Pin Sheng Sun ,  Karen Prichard ,  Lauren Hall ,  Vikram Singh

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/311

CPC分类号： H01L21/02164 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/76224

摘要： Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.13 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen and a phosphorus dopant precursor as process gasses in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

摘要翻译： 采用化学气相沉积工艺来填补高纵横比（通常至少3:1），窄宽度（通常为1.5微米或更小，甚至0.13微米以下）间隙，空隙或弱点的发生率显着降低。 该沉积工艺涉及使用氢和磷掺杂剂前体作为含等离子体CVD反应器的反应混合物中的工艺气体。 工艺气体还包括电介质形成前体分子，例如硅和含氧分子。