公开(公告)号：US06277742B1

公开(公告)日：2001-08-21

申请号：US09342570

申请日：1999-06-29

申请人： Chien-Jung Wang ,  Chingfu Lin ,  Lien-Jung Hung

发明人： Chien-Jung Wang ,  Chingfu Lin ,  Lien-Jung Hung

IPC分类号： H01L2144

CPC分类号： H01L21/02071 ,  H01L21/32136 ,  H01L21/76838 ,  Y10S438/906

摘要： A method of protecting a tungsten plug from corroding. After a tungsten plug is formed in a substrate, a wire is formed on the substrate to couple with the tungsten plug. The substrate is dipped into an electrolyte solution. The electrolyte solution is acid or alkaline enough to discharge charges accumulated on the wire. Then, a wet cleaning process is performed to remove polymer formed on the wire.

摘要翻译： 防止钨丝塞腐蚀的方法。 在基板中形成钨插塞之后，在基板上形成导线以与钨插塞耦合。 将基板浸入电解质溶液中。 电解质溶液是酸性或碱性足以释放积累在电线上的电荷。 然后，进行湿式清洗处理以除去在导线上形成的聚合物。

公开(公告)号：US07880494B2

公开(公告)日：2011-02-01

申请号：US12715739

申请日：2010-03-02

申请人： Yih-Yuh Doong ,  Keh-Jeng Chang ,  Yuh-Jier Mii ,  Sally Liu ,  Lien Jung Hung ,  Victor Chih Yuan Chang

发明人： Yih-Yuh Doong ,  Keh-Jeng Chang ,  Yuh-Jier Mii ,  Sally Liu ,  Lien Jung Hung ,  Victor Chih Yuan Chang

IPC分类号： G01R31/26

CPC分类号： G01R31/2853 ,  G01R31/2884 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Test structures and methods for measuring contact and via parasitic capacitance in an integrated circuit are provided. The accuracy of contact and via capacitance measurements are improved by eliminating not-to-be-measured capacitance from the measurement results. The capacitance is measured on a target test structure that has to-be-measured contact or via capacitance. Measurements are then repeated on a substantially similar reference test structure that is free of to-be-measured contact or via capacitances. By using the capacitance measurements of the two test structures, the to-be-measured contact and via capacitance can be calculated.

摘要翻译： 提供了用于测量集成电路中的接触和通过寄生电容的测试结构和方法。 通过从测量结果中消除不被测量的电容，提高了接触和通孔电容测量的精度。 电容是在必须测量的接触或电容的目标测试结构上测量的。 然后在基本相似的参考测试结构上重复测量，该测试结构不受测量的接触或通过电容。 通过使用两个测试结构的电容测量，可以计算待测量的接触和通孔电容。

公开(公告)号：US20100156453A1

公开(公告)日：2010-06-24

申请号：US12715739

申请日：2010-03-02

申请人： Yih-Yuh Doong ,  Keh-Jeng Chang ,  Yuh-Jier Mii ,  Sally Liu ,  Lien Jung Hung ,  Victor Chih Yuan Chang

发明人： Yih-Yuh Doong ,  Keh-Jeng Chang ,  Yuh-Jier Mii ,  Sally Liu ,  Lien Jung Hung ,  Victor Chih Yuan Chang

IPC分类号： G01R31/26 ,  G01R27/26

CPC分类号： G01R31/2853 ,  G01R31/2884 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Test structures and methods for measuring contact and via parasitic capacitance in an integrated circuit are provided. The accuracy of contact and via capacitance measurements are improved by eliminating not-to-be-measured capacitance from the measurement results. The capacitance is measured on a target test structure that has to-be-measured contact or via capacitance. Measurements are then repeated on a substantially similar reference test structure that is free of to-be-measured contact or via capacitances. By using the capacitance measurements of the two test structures, the to-be-measured contact and via capacitance can be calculated.

摘要翻译： 提供了用于测量集成电路中的接触和通过寄生电容的测试结构和方法。 通过从测量结果中消除不被测量的电容，提高了接触和通孔电容测量的精度。 电容是在必须测量的接触或电容的目标测试结构上测量的。 然后在基本相似的参考测试结构上重复测量，该测试结构不受测量的接触或通过电容。 通过使用两个测试结构的电容测量，可以计算待测量的接触和通孔电容。

公开(公告)号：US20110168995A1

公开(公告)日：2011-07-14

申请号：US13015117

申请日：2011-01-27

申请人： Yih-Yuh Doong ,  Keh-Jeng Chang ,  Yuh-Jier Mii ,  Sally Liu ,  Lien Jung Hung ,  Victor Chih Yuan Chang

发明人： Yih-Yuh Doong ,  Keh-Jeng Chang ,  Yuh-Jier Mii ,  Sally Liu ,  Lien Jung Hung ,  Victor Chih Yuan Chang

IPC分类号： H01L23/544

CPC分类号： G01R31/2853 ,  G01R31/2884 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Test structures and methods for measuring contact and via parasitic capacitance in an integrated circuit are provided. The accuracy of contact and via capacitance measurements are improved by eliminating not-to-be-measured capacitance from the measurement results. The capacitance is measured on a target test structure that has to-be-measured contact or via capacitance. Measurements are then repeated on a substantially similar reference test structure that is free of to-be-measured contact or via capacitances. By using the capacitance measurements of the two test structures, the to-be-measured contact and via capacitance can be calculated.

摘要翻译： 提供了用于测量集成电路中的接触和通过寄生电容的测试结构和方法。 通过从测量结果中消除不被测量的电容，提高了接触和通孔电容测量的精度。 电容是在必须测量的接触或电容的目标测试结构上测量的。 然后在基本相似的参考测试结构上重复测量，该测试结构不受测量的接触或通过电容。 通过使用两个测试结构的电容测量，可以计算待测量的接触和通孔电容。

公开(公告)号：US07772868B2

公开(公告)日：2010-08-10

申请号：US11966653

申请日：2007-12-28

申请人： Yih-Yuh Doong ,  Keh-Jeng Chang ,  Yuh-Jier Mii ,  Sally Liu ,  Lien Jung Hung ,  Victor Chih Yuan Chang

发明人： Yih-Yuh Doong ,  Keh-Jeng Chang ,  Yuh-Jier Mii ,  Sally Liu ,  Lien Jung Hung ,  Victor Chih Yuan Chang

IPC分类号： G01R31/26

CPC分类号： G01R31/2853 ,  G01R31/2884 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Test structures and methods for measuring contact and via parasitic capacitance in an integrated circuit are provided. The accuracy of contact and via capacitance measurements are improved by eliminating not-to-be-measured capacitance from the measurement results. The capacitance is measured on a target test structure that has to-be-measured contact or via capacitance. Measurements are then repeated on a substantially similar reference test structure that is free of to-be-measured contact or via capacitances. By using the capacitance measurements of the two test structures, the to-be-measured contact and via capacitance can be calculated.

摘要翻译： 提供了用于测量集成电路中的接触和通过寄生电容的测试结构和方法。 通过从测量结果中消除不被测量的电容，提高了接触和通孔电容测量的精度。 电容是在必须测量的接触或电容的目标测试结构上测量的。 然后在基本相似的参考测试结构上重复测量，该测试结构不受测量的接触或通过电容。 通过使用两个测试结构的电容测量，可以计算待测量的接触和通孔电容。

公开(公告)号：US20090002012A1

公开(公告)日：2009-01-01

申请号：US11966653

申请日：2007-12-28

申请人： Yih-Yuh Doong ,  Keh-Jeng Chang ,  Yuh-Jier Mii ,  Sally Liu ,  Lien Jung Hung ,  Victor Chih Yuan Chang

发明人： Yih-Yuh Doong ,  Keh-Jeng Chang ,  Yuh-Jier Mii ,  Sally Liu ,  Lien Jung Hung ,  Victor Chih Yuan Chang

IPC分类号： G01R31/26 ,  H01L23/58

CPC分类号： G01R31/2853 ,  G01R31/2884 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Test structures and methods for measuring contact and via parasitic capacitance in an integrated circuit are provided. The accuracy of contact and via capacitance measurements are improved by eliminating not-to-be-measured capacitance from the measurement results. The capacitance is measured on a target test structure that has to-be-measured contact or via capacitance. Measurements are then repeated on a substantially similar reference test structure that is free of to-be-measured contact or via capacitances. By using the capacitance measurements of the two test structures, the to-be-measured contact and via capacitance can be calculated.

摘要翻译： 提供了用于测量集成电路中的接触和通过寄生电容的测试结构和方法。 通过从测量结果中消除不被测量的电容，提高了接触和通孔电容测量的精度。 电容是在必须测量的接触或电容的目标测试结构上测量的。 然后在基本相似的参考测试结构上重复测量，该测试结构不受测量的接触或通过电容。 通过使用两个测试结构的电容测量，可以计算待测量的接触和通孔电容。

公开(公告)号：US08115500B2

公开(公告)日：2012-02-14

申请号：US13015117

申请日：2011-01-27

申请人： Yih-Yuh Doong ,  Keh-Jeng Chang ,  Yuh-Jier Mii ,  Sally Liu ,  Lien Jung Hung ,  Victor Chih Yuan Chang

发明人： Yih-Yuh Doong ,  Keh-Jeng Chang ,  Yuh-Jier Mii ,  Sally Liu ,  Lien Jung Hung ,  Victor Chih Yuan Chang

IPC分类号： G01R31/28

CPC分类号： G01R31/2853 ,  G01R31/2884 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Test structures and methods for measuring contact and via parasitic capacitance in an integrated circuit are provided. The accuracy of contact and via capacitance measurements are improved by eliminating not-to-be-measured capacitance from the measurement results. The capacitance is measured on a target test structure that has to-be-measured contact or via capacitance. Measurements are then repeated on a substantially similar reference test structure that is free of to-be-measured contact or via capacitances. By using the capacitance measurements of the two test structures, the to-be-measured contact and via capacitance can be calculated.

摘要翻译： 提供了用于测量集成电路中的接触和通过寄生电容的测试结构和方法。 通过从测量结果中消除不被测量的电容，提高了接触和通孔电容测量的精度。 电容是在必须测量的接触或电容的目标测试结构上测量的。 然后在基本相似的参考测试结构上重复测量，该测试结构不受测量的接触或通过电容。 通过使用两个测试结构的电容测量，可以计算待测量的接触和通孔电容。