Herbal chinese joint complex
    1.
    发明授权
    Herbal chinese joint complex 失效
    草药中国联合综合体

    公开(公告)号:US06350476B1

    公开(公告)日:2002-02-26

    申请号:US09576323

    申请日:2000-05-22

    申请人: Liping Hou

    发明人: Liping Hou

    IPC分类号: A01N6500

    摘要: The present invention provides compositions comprising the ingredients of plants of species of the genera Stephania, Coix, Pinellia, Prunus, Phellodendron, Sophora, Tetrapanax, Stemona, Glycyrrhiza, Tripterygium, Forsythia and Siegesbeckia, wherein such compositions have analgesic, antipyretic, and antiinflammatory properties. The present invention also provides methods of using such compositions for treating various conditions and diseases, including joint swelling, joint pain, osteoarthritis and rheumatoid arthritis.

    摘要翻译: 本发明提供了包含Stephania属,Co ix属,Pinellia,Prunus,Phellodendron,Sophora,Tetrapanax,Stemona,Glycyrrhiza,Tripterygium,连翘和Siegesbeckia属植物的成分的组合物,其中这些组合物具有止痛,解热和抗炎特性 。 本发明还提供使用这些组合物治疗各种病症和疾病的方法,包括关节肿胀,关节疼痛,骨关节炎和类风湿性关节炎。

    Dual etchant process, particularly for gate recess fabrication in GaAs
MMIC chips
    3.
    发明授权
    Dual etchant process, particularly for gate recess fabrication in GaAs MMIC chips 失效
    双蚀刻工艺,特别适用于GaAs MMIC芯片中的栅极凹槽制造

    公开(公告)号:US5436201A

    公开(公告)日:1995-07-25

    申请号:US68871

    申请日:1993-05-28

    CPC分类号: H01L29/66863 H01L21/30612

    摘要: A semiconductor substrate is etched in a two-step sequence, with two different liquid etchants that have different lateral etch rates. The relative time periods for which the etchants are applied are selected to achieve a close match between the actual etch profile and the desired profile. The process is particularly applicable to the formation of a gate recess in a GaAs MESFET for high power amplification.

    摘要翻译: 用两步序列蚀刻半导体衬底,使用具有不同横向蚀刻速率的两种不同的液体蚀刻剂。 选择施加蚀刻剂的相对时间段以实现实际蚀刻轮廓和期望轮廓之间的紧密匹配。 该方法特别适用于在用于高功率放大的GaAs MESFET中形成栅极凹槽。