公开(公告)号：US5436201A

公开(公告)日：1995-07-25

申请号：US68871

申请日：1993-05-28

申请人： Tom Y. Chi ,  Danny Li ,  Liping Hou ,  Tom Quach

发明人： Tom Y. Chi ,  Danny Li ,  Liping Hou ,  Tom Quach

IPC分类号： H01L21/306 ,  H01L21/338 ,  H01L21/8252

CPC分类号： H01L29/66863 ,  H01L21/30612

摘要： A semiconductor substrate is etched in a two-step sequence, with two different liquid etchants that have different lateral etch rates. The relative time periods for which the etchants are applied are selected to achieve a close match between the actual etch profile and the desired profile. The process is particularly applicable to the formation of a gate recess in a GaAs MESFET for high power amplification.

摘要翻译： 用两步序列蚀刻半导体衬底，使用具有不同横向蚀刻速率的两种不同的液体蚀刻剂。 选择施加蚀刻剂的相对时间段以实现实际蚀刻轮廓和期望轮廓之间的紧密匹配。 该方法特别适用于在用于高功率放大的GaAs MESFET中形成栅极凹槽。

公开(公告)号：US5705432A

公开(公告)日：1998-01-06

申请号：US566197

申请日：1995-12-01

申请人： Kusol Lee ,  Tom Quach ,  Danny Li ,  Liping D. Hou ,  Sam Chung ,  Tom Y. Chi

发明人： Kusol Lee ,  Tom Quach ,  Danny Li ,  Liping D. Hou ,  Sam Chung ,  Tom Y. Chi

IPC分类号： H01L21/027 ,  H01L21/465

CPC分类号： H01L21/0272 ,  Y10S438/951

摘要： A unique photoresist process is provided which achieves clean and complete lift-off of a thin film layer such as a sputtered thin film formed on a photoresist which is formed above a semiconductor substrate. The process of the present invention relies on a reentrant photoresist profile which breaks the continuity of the thin film layer. Accordingly, the process of the present invention ensures a clean lift-off. The desired photoresist profile which breaks the continuity of the thin film layer can be obtained by a typical photoresist process preceded by an oxidation process that takes place on the surface of the semiconductor substrate. The oxidation process provides a thin native oxide layer with thickness ranging from about 30 to 50 .ANG.. No extra processing steps involving dielectric film deposition and etch are required to achieve clean lift-off. Nevertheless, the process of the present invention ensures the clean lift-off of the thin film layer. Accordingly, the process of the present invention provides good visual and electrical yields.

摘要翻译： 提供了一种独特的光刻胶工艺，其实现了清洁和完全剥离薄膜层，例如形成在半导体衬底上的光致抗蚀剂上形成的溅射薄膜。 本发明的方法依赖于破坏薄膜层的连续性的可重入光致抗蚀剂轮廓。 因此，本发明的方法确保了清洁的剥离。 可以通过在半导体衬底的表面上发生的氧化工艺之前的典型的光致抗蚀剂工艺来获得破坏薄膜层的连续性的期望的光致抗蚀剂轮廓。 氧化过程提供厚度范围为约30至50安培的薄的天然氧化物层。 不需要涉及介电膜沉积和蚀刻的额外处理步骤来实现干净的剥离。 然而，本发明的方法确保了薄膜层的清洁剥离。 因此，本发明的方法提供良好的视觉和电产量。

公开(公告)号：US5556797A

公开(公告)日：1996-09-17

申请号：US453676

申请日：1995-05-30

申请人： Tom Y. Chi ,  Liping D. Hou ,  Kusol Lee ,  Danny Li ,  Ishver K. Naik ,  Tom Quach

发明人： Tom Y. Chi ,  Liping D. Hou ,  Kusol Lee ,  Danny Li ,  Ishver K. Naik ,  Tom Quach

IPC分类号： H01L21/338 ,  H01L29/812 ,  H01L21/8258

CPC分类号： H01L29/66871 ,  H01L29/8128

摘要： A method of fabricating a self-aligned double gate recess profile in a semiconductor substrate is disclosed in which a first mask layer is formed over the substrate. A second mask layer having an opening is formed over the first mask layer. An opening at least as wide as the second mask layer's opening is formed through the first mask layer to expose the substrate beneath the second mask layer's opening. A first recess is etched in the semiconductor through the second mask layer's opening. The first mask layer's opening is then uniformly expanded and a wider recess, aligned to the first recess, is then formed in the semiconductor. The method is particularly applicable to the formation of self-aligned gate and channel recesses in a GaAs MESFET.

摘要翻译： 公开了一种在半导体衬底中制造自对准双栅凹槽轮廓的方法，其中在衬底上形成第一掩模层。 在第一掩模层上形成具有开口的第二掩模层。 通过第一掩模层形成至少与第二掩模层开口一样宽的开口，以将第二掩模层开口下方的基板曝光。 通过第二掩模层的开口在半导体中蚀刻第一凹槽。 然后将第一掩模层的开口均匀地膨胀，然后在半导体中形成与第一凹部对准的更宽的凹部。 该方法特别适用于GaAs MESFET中自对准栅极和沟槽的形成。

公开(公告)号：US5058264A

公开(公告)日：1991-10-22

申请号：US515773

申请日：1990-04-13

申请人： Tom Quach

发明人： Tom Quach

IPC分类号： H05K13/04

CPC分类号： H05K13/0491 ,  Y10T29/53183 ,  Y10T29/53222 ,  Y10T29/53257 ,  Y10T29/53943

摘要： An I.C. insertor/extractor, which can press I.C.s on and extract the I.C.s from a printed circuit board, having an elongate handgrip element a clipping element, and a cap having a stem on its bottom end. The lower portion of the stem is maintained in the enlarged bore of the elongate body since a first C-ring is received by a groove disposed at a lower portion of the stem. The clipping element has a clipping housing with a cylindrical protrusion to be lodged in the elongate body. A spring-loaded rivet is retained within the cylindrical protrusion by a second C-ring mounted in a channel disposed at a bottom end of the cylindrical protrusion. A pair of pinching elements which are combined by a spring element is disposed under the rivet and a plate below the pinching elements has a hole on the center position of the plate to receive the rivet.

摘要翻译： 一个I.C. 插入器/提取器，其可以按下I.C.s并从印刷电路板提取I.C.s，具有细长的手柄元件剪切元件和在其底端具有杆的帽。 杆的下部保持在细长体的扩大的孔中，因为第一C形环由设置在杆的下部的凹槽容纳。 夹持元件具有夹持壳体，其具有圆柱形突出部，以便被放置在细长主体中。 弹簧加载的铆钉通过安装在设置在圆柱形突起的底端的通道中的第二C形环保持在圆柱形突出部内。 通过弹簧元件组合的一对夹紧元件设置在铆钉下方，并且夹持元件下方的板在板的中心位置具有用于接收铆钉的孔。