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公开(公告)号：US07923098B2
公开(公告)日：2011-04-12
申请号：US11968544
申请日：2008-01-02
CPC分类号： H01L21/02521 , H01L21/02395 , H01L21/02398 , H01L21/02466 , H01L21/02502 , H01L21/02505 , H01L21/02549 , Y10T428/24942 , Y10T428/2495
摘要： A low-defect-density crystalline structure comprising a first crystalline material, a layer of second crystalline material epitaxially grown on the first crystalline material, and a layer of third crystalline material epitaxially grown on the second layer such that the second layer is positioned between the first crystalline material and the third crystalline material. The second and third crystalline materials cooperate to form a desirable relationship. The crystalline structures of the second crystalline material and third crystalline material have a higher crystalline compatibility than the first crystalline material and third crystalline material. The layer of second crystalline material is sufficiently thick to form the desirable relationship with the third crystalline material but sufficiently thin for the layer of second crystalline material to be strained. The layer of third crystalline material is grown to a thickness beyond a thickness had the third layer been grown on an unstrained second layer.
摘要翻译： 包含第一晶体材料，外延生长在第一晶体材料上的第二晶体材料层和在第二层上外延生长的第三晶体材料层的低缺陷密度晶体结构使得第二层位于 第一结晶材料和第三结晶材料。 第二和第三结晶材料配合以形成期望的关系。 第二结晶材料和第三结晶材料的晶体结构具有比第一结晶材料和第三结晶材料更高的结晶相容性。 第二结晶材料层足够厚以与第三结晶材料形成期望的关系，但对于要应变的第二晶体材料层来说足够薄。 如果第三层在无应变的第二层上生长，则将第三晶体材料层生长至超过厚度的厚度。
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公开(公告)号：US20090169843A1
公开(公告)日：2009-07-02
申请号：US11968544
申请日：2008-01-02
CPC分类号： H01L21/02521 , H01L21/02395 , H01L21/02398 , H01L21/02466 , H01L21/02502 , H01L21/02505 , H01L21/02549 , Y10T428/24942 , Y10T428/2495
摘要： A low-defect-density crystalline structure comprising a first crystalline material, a layer of second crystalline material epitaxially grown on the first crystalline material, and a layer of third crystalline material epitaxially grown on the second layer such that the second layer is positioned between the first crystalline material and the third crystalline material. The second and third crystalline materials cooperate to form a desirable relationship. The crystalline structures of the second crystalline material and third crystalline material have a higher crystalline compatibility than the first crystalline material and third crystalline material. The layer of second crystalline material is sufficiently thick to form the desirable relationship with the third crystalline material but sufficiently thin for the layer of second crystalline material to be strained. The layer of third crystalline material is grown to a thickness beyond a thickness had the third layer been grown on an unstrained second layer.
摘要翻译： 包含第一晶体材料，外延生长在第一晶体材料上的第二晶体材料层和在第二层上外延生长的第三晶体材料层的低缺陷密度晶体结构使得第二层位于 第一结晶材料和第三结晶材料。 第二和第三结晶材料配合以形成期望的关系。 第二结晶材料和第三结晶材料的晶体结构具有比第一结晶材料和第三结晶材料更高的结晶相容性。 第二结晶材料层足够厚以与第三结晶材料形成期望的关系，但对于要应变的第二晶体材料层来说足够薄。 如果第三层在无应变的第二层上生长，则将第三晶体材料层生长至超过厚度的厚度。
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