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    Interband cascade (IC) photovoltaic (PV) architecture for PV devices
    1.
    发明授权
    Interband cascade (IC) photovoltaic (PV) architecture for PV devices 有权
    光伏器件的带间级联（IC）光伏（PV）架构

    公开(公告)号：US09166084B2

    公开(公告)日：2015-10-20

    申请号：US13024203

    申请日：2011-02-09

    申请人： Rui Q. Yang ,  Zhaobing Tian ,  Tetsuya D. Mishima ,  Michael B. Santos ,  Matthew B. Johnson ,  John F. Klem

    发明人： Rui Q. Yang ,  Zhaobing Tian ,  Tetsuya D. Mishima ,  Michael B. Santos ,  Matthew B. Johnson ,  John F. Klem

    IPC分类号： H01L31/0725 ,  H01L31/0735 ,  H01L31/0352 ,  B82Y20/00

    CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/0725 ,  H01L31/0735 ,  Y02E10/544

    摘要： A photovoltaic (PV) device, comprising a PV interband cascade (IC) stage, wherein the IC PV stage comprises an absorption region with a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier. An IC PV architecture for a photovoltaic device, the IC PV architecture comprising an absorption region, an intraband transport region coupled to the absorption region, and an interband tunneling region coupled to the intraband transport region and to the adjacent absorption region, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.

    摘要翻译： 一种包括PV带间级联（IC）级的光伏（PV）装置，其中所述IC PV级包括具有带隙的吸收区域，所述吸收区域被配置为吸收光子，配置成充当空穴阻挡层的内部内传输区域 ，以及配置为充当电子势垒的带间隧道区域。 一种用于光伏器件的IC PV结构，所述IC PV结构包括吸收区域，耦合到所述吸收区域的体内传输区域，以及耦合到所述体内传输区域和相邻吸收区域的带间隧道区域，其中所述吸收区域 位于内部传输区域和带间隧道区域之间的位置使得电子将从吸收区域流到内部传输区域到带间隧道区域。

    Interband Cascade (IC) Photovoltaic (PV) Architecture for PV Devices
    2.
    发明申请
    Interband Cascade (IC) Photovoltaic (PV) Architecture for PV Devices 有权
    光伏器件的带间级联（IC）光伏（PV）架构

    公开(公告)号：US20120199185A1

    公开(公告)日：2012-08-09

    申请号：US13024203

    申请日：2011-02-09

    申请人： Rui Q. Yang ,  Zhaobing Tian ,  Tetsuya D. Mishima ,  Michael B. Santos ,  Matthew B. Johnson ,  John F. Klem

    发明人： Rui Q. Yang ,  Zhaobing Tian ,  Tetsuya D. Mishima ,  Michael B. Santos ,  Matthew B. Johnson ,  John F. Klem

    IPC分类号： H01L31/0248 ,  H01L31/0264 ,  H01L31/0336 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/02 ,  H01L31/0272

    CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/0725 ,  H01L31/0735 ,  Y02E10/544

    摘要： A photovoltaic (PV) device, comprising a PV interband cascade (IC) stage, wherein the IC PV stage comprises an absorption region with a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier. An IC PV architecture for a photovoltaic device, the IC PV architecture comprising an absorption region, an intraband transport region coupled to the absorption region, and an interband tunneling region coupled to the intraband transport region and to the adjacent absorption region, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.

    摘要翻译： 一种包括PV带间级联（IC）级的光伏（PV）装置，其中所述IC PV级包括具有带隙的吸收区域，所述吸收区域被配置为吸收光子，配置成充当空穴阻挡层的内部内传输区域 ，以及配置为充当电子势垒的带间隧道区域。 一种用于光伏器件的IC PV结构，所述IC PV结构包括吸收区域，耦合到所述吸收区域的体内传输区域，以及耦合到所述体内传输区域和相邻吸收区域的带间隧道区域，其中所述吸收区域 位于内部传输区域和带间隧道区域之间的位置使得电子将从吸收区域流到内部传输区域到带间隧道区域。

    Semiconductor Interband Lasers and Method of Forming
    4.
    发明申请
    Semiconductor Interband Lasers and Method of Forming 有权
    半导体激光器及其形成方法

    公开(公告)号：US20120044964A1

    公开(公告)日：2012-02-23

    申请号：US12975008

    申请日：2010-12-21

    申请人： Rui Q. Yang ,  Tetsuya Mishima ,  Michael B. Santos ,  Zhaobing Tian ,  Matthew B. Johnson ,  Robert T. Hinkey

    发明人： Rui Q. Yang ,  Tetsuya Mishima ,  Michael B. Santos ,  Zhaobing Tian ,  Matthew B. Johnson ,  Robert T. Hinkey

    IPC分类号： H01S5/323

    CPC分类号： H01S5/3401 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/1046 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/3216 ,  H01S5/3402 ,  H01S5/3422 ,  H01S5/343

    摘要： A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.

    摘要翻译： 一种半导体区带激光器，其包括使用具有第一折射率/介电常数的第一高掺杂半导体材料形成的第一覆层和使用具有第二折射率/介电常数的第二高掺杂半导体材料形成的第二覆层。 激光器还包括具有波导芯折射率/介电常数的波导芯，波导芯位于第一和第二覆层之间。 波导芯包括适于基于带间跃迁产生光的有源区。 产生的光定义了激光波长或激光频率。 第一折射率和第二折射率低于波导芯折射率。 第一覆层和/或第二覆层也可以使用金属形成。

    Low-defect-density crystalline structure and method for making same
    5.
    发明授权
    Low-defect-density crystalline structure and method for making same 失效
    低缺陷密度晶体结构及其制备方法

    公开(公告)号：US07923098B2

    公开(公告)日：2011-04-12

    申请号：US11968544

    申请日：2008-01-02

    申请人： Tetsuya Mishima ,  Madhavie Edirisooriya ,  Michael B. Santos

    发明人： Tetsuya Mishima ,  Madhavie Edirisooriya ,  Michael B. Santos

    IPC分类号： B32B7/02 ,  C30B19/00

    CPC分类号： H01L21/02521 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02466 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02549 ,  Y10T428/24942 ,  Y10T428/2495

    摘要： A low-defect-density crystalline structure comprising a first crystalline material, a layer of second crystalline material epitaxially grown on the first crystalline material, and a layer of third crystalline material epitaxially grown on the second layer such that the second layer is positioned between the first crystalline material and the third crystalline material. The second and third crystalline materials cooperate to form a desirable relationship. The crystalline structures of the second crystalline material and third crystalline material have a higher crystalline compatibility than the first crystalline material and third crystalline material. The layer of second crystalline material is sufficiently thick to form the desirable relationship with the third crystalline material but sufficiently thin for the layer of second crystalline material to be strained. The layer of third crystalline material is grown to a thickness beyond a thickness had the third layer been grown on an unstrained second layer.

    摘要翻译： 包含第一晶体材料，外延生长在第一晶体材料上的第二晶体材料层和在第二层上外延生长的第三晶体材料层的低缺陷密度晶体结构使得第二层位于 第一结晶材料和第三结晶材料。 第二和第三结晶材料配合以形成期望的关系。 第二结晶材料和第三结晶材料的晶体结构具有比第一结晶材料和第三结晶材料更高的结晶相容性。 第二结晶材料层足够厚以与第三结晶材料形成期望的关系，但对于要应变的第二晶体材料层来说足够薄。 如果第三层在无应变的第二层上生长，则将第三晶体材料层生长至超过厚度的厚度。

    Low-Defect-Density Crystalline Structure and Method for Making Same
    6.
    发明申请
    Low-Defect-Density Crystalline Structure and Method for Making Same 失效
    低缺陷密度结晶结构及其制备方法

    公开(公告)号：US20090169843A1

    公开(公告)日：2009-07-02

    申请号：US11968544

    申请日：2008-01-02

    申请人： Tetsuya Mishima ,  Madhavie Edirisooriya ,  Michael B. Santos

    发明人： Tetsuya Mishima ,  Madhavie Edirisooriya ,  Michael B. Santos

    IPC分类号： B32B7/02 ,  C30B19/00

    CPC分类号： H01L21/02521 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02466 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02549 ,  Y10T428/24942 ,  Y10T428/2495

    摘要： A low-defect-density crystalline structure comprising a first crystalline material, a layer of second crystalline material epitaxially grown on the first crystalline material, and a layer of third crystalline material epitaxially grown on the second layer such that the second layer is positioned between the first crystalline material and the third crystalline material. The second and third crystalline materials cooperate to form a desirable relationship. The crystalline structures of the second crystalline material and third crystalline material have a higher crystalline compatibility than the first crystalline material and third crystalline material. The layer of second crystalline material is sufficiently thick to form the desirable relationship with the third crystalline material but sufficiently thin for the layer of second crystalline material to be strained. The layer of third crystalline material is grown to a thickness beyond a thickness had the third layer been grown on an unstrained second layer.

    摘要翻译： 包含第一晶体材料，外延生长在第一晶体材料上的第二晶体材料层和在第二层上外延生长的第三晶体材料层的低缺陷密度晶体结构使得第二层位于 第一结晶材料和第三结晶材料。 第二和第三结晶材料配合以形成期望的关系。 第二结晶材料和第三结晶材料的晶体结构具有比第一结晶材料和第三结晶材料更高的结晶相容性。 第二结晶材料层足够厚以与第三结晶材料形成期望的关系，但对于要应变的第二晶体材料层来说足够薄。 如果第三层在无应变的第二层上生长，则将第三晶体材料层生长至超过厚度的厚度。