公开(公告)号：US06707071B2

公开(公告)日：2004-03-16

申请号：US10096508

申请日：2002-03-13

申请人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

发明人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

IPC分类号： H01L3300

CPC分类号： H01S5/2231 ,  H01S5/0202 ,  H01S5/0658 ,  H01S5/2272 ,  H01S5/3213

摘要： In a semiconductor light-emitting device including a substrate, a first compound semiconductor layer including an active layer formed on the substrate, a second compound semiconductor layer of a ridge type formed on the first compound semiconductor layer, and a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer, the disclosed semiconductor light-emitting device has a current blocking layer formed above the first compound semiconductor layer outside the protective film. This semiconductor light-emitting device is with a high production yield since readily cleaved and assembled, with adequately squeezed currents, and with, when assembled in the junction-down type, a high output and a longer life span.

摘要翻译： 在包括衬底的半导体发光器件中，包括形成在衬底上的有源层的第一化合物半导体层，形成在第一化合物半导体层上的脊状的第二化合物半导体层和形成在第一化合物半导体层上的保护膜 化合物半导体层在第二化合物半导体层的两侧，所公开的半导体发光器件具有形成在保护膜外部的第一化合物半导体层上方的电流阻挡层。 这种半导体发光器件由于容易地被切割和组装而具有高的产量，具有适当的挤压电流，并且当在结合型组装时具有高输出和更长的寿命。

公开(公告)号：US06387721B1

公开(公告)日：2002-05-14

申请号：US09404376

申请日：1999-09-24

申请人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

发明人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

IPC分类号： H01L2100

CPC分类号： H01S5/2231 ,  H01S5/0202 ,  H01S5/0658 ,  H01S5/2272 ,  H01S5/3213

摘要： In a semiconductor light-emitting device including a substrate, a first compound semiconductor layer including an active layer formed on the substrate, a second compound semiconductor layer of a ridge type formed on the first compound semiconductor layer, and a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer, the disclosed semiconductor light-emitting device has a current blocking layer formed above the first compound semiconductor layer outside the protective film. This semiconductor light-emitting device is with a high production yield since readily cleaved and assembled, with adequately squeezed currents, and with, when assembled in the junction-down type, a high output and a longer life span.

摘要翻译： 在包括衬底的半导体发光器件中，包括形成在衬底上的有源层的第一化合物半导体层，形成在第一化合物半导体层上的脊状的第二化合物半导体层和形成在第一化合物半导体层上的保护膜 化合物半导体层在第二化合物半导体层的两侧，所公开的半导体发光器件具有形成在保护膜外部的第一化合物半导体层上方的电流阻挡层。 这种半导体发光器件由于容易地被切割和组装而具有高的产量，具有适当的挤压电流，并且当在结合型组装时具有高输出和更长的寿命。