公开(公告)号：US09985415B2

公开(公告)日：2018-05-29

申请号：US14814932

申请日：2015-07-31

Applicant: KABUSHIKI KAISHA TOPCON

Inventor： Yoshikatsu Tokuda ,  Yoshiaki Goto

IPC: H01S5/065 ,  H01S5/042 ,  H01S5/062 ,  G01B11/02 ,  H01S5/068

CPC classification number: H01S5/0658 ,  G01B11/026 ,  G01S7/4814 ,  G01S7/484 ,  G01S17/10 ,  H01S5/0428 ,  H01S5/06216 ,  H01S5/06804

Abstract: Light with a short pulse width is emitted using a simple structure. A light source 101, a differentiation circuit 102, and a switch 103 are connected in series. When the switch 103 is switched on, inrush current flows in a capacitor 102b forming the differentiation circuit 102, and accordingly the light source 101 is supplied with electric current and thereby emits light. When the capacitor 102b is charged, electric current flows in a resistor 102a, and voltage drops at the resistor 102a. Then, the voltage applied to the light source 101 is decreased, whereby the light source 101 stops emitting light. By using the inrush current at the capacitor 102b, light with a short pulse width can be generated.

公开(公告)号：US20150131425A9

公开(公告)日：2015-05-14

申请号：US13545688

申请日：2012-07-10

Applicant: Goro Fujita ,  Tsutomu Maruyama ,  Masaru Kuramoto ,  Hideki Watanabe

Inventor： Goro Fujita ,  Tsutomu Maruyama ,  Masaru Kuramoto ,  Hideki Watanabe

IPC: G11B7/126 ,  G11B7/1374 ,  H01S5/065 ,  H01S5/0625 ,  H01S5/026 ,  G11B7/1275 ,  H01S5/34 ,  H01S5/343

CPC classification number: G11B7/126 ,  B82Y20/00 ,  G11B7/127 ,  G11B7/1275 ,  G11B7/128 ,  G11B2007/00457 ,  H01S5/0261 ,  H01S5/0602 ,  H01S5/06253 ,  H01S5/06255 ,  H01S5/0658 ,  H01S5/34333

Abstract: Provided is a recording apparatus including a self-excited oscillation semiconductor laser that has a double quantum well separate confinement heterostructure and includes a saturable absorber section to which a negative bias voltage is applied and a gain section into which a gain current is injected, an optical separation unit, an objective lens, a light reception element, a pulse detection unit, a reference signal generation unit, a phase comparison unit, a recording signal generation unit, and a control unit.

Abstract translation: 提供了一种记录装置，其包括具有双量子阱分离限制异质结构的自激振荡半导体激光器，并且包括施加负偏置电压的可饱和吸收部分和注入增益电流的增益部分，光学 分离单元，物镜，光接收元件，脉冲检测单元，参考信号生成单元，相位比较单元，记录信号生成单元和控制单元。

公开(公告)号：US20110268144A1

公开(公告)日：2011-11-03

申请号：US12681981

申请日：2009-10-21

Applicant: Kazutoshi Onozawa ,  Satoshi Tamura ,  Hideki Kasugai

Inventor： Kazutoshi Onozawa ,  Satoshi Tamura ,  Hideki Kasugai

IPC: H01S5/323 ,  H01S5/00

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0658 ,  H01S5/2009 ,  H01S5/2081 ,  H01S5/2206 ,  H01S5/3063

Abstract: A nitride semiconductor laser device includes an active layer 106 made of a nitride semiconductor formed on a substrate and a current confining layer 109 formed above the active layer 106. The current confining layer has an opening 109a through which a current selectively flows into the active layer 106. The device satisfies 0.044

Abstract translation: 氮化物半导体激光器件包括由形成在衬底上的氮化物半导体制成的有源层106和形成在有源层106上方的电流限制层109.电流限制层具有开口109a，电流选择性地流入有源层 该装置满足0.044 <＆Dgr; n /＆Ggr; v <0.062其中＆Dgr; n是开口109a和电流限制层109之间的有效折射率差，＆Ggr; v是作为垂直光限制因子的比例 限定在有源层106中的激光照射到在有源层106中发射的激光。

公开(公告)号：US20110142085A1

公开(公告)日：2011-06-16

申请号：US12999954

申请日：2009-06-19

Applicant: Mirvais Yousefi

Inventor： Mirvais Yousefi

IPC: H01S5/06 ,  H01S5/22 ,  H01S5/40 ,  H05K13/00

CPC classification number: H01S5/1021 ,  H01S5/0617 ,  H01S5/0622 ,  H01S5/065 ,  H01S5/0656 ,  H01S5/0658 ,  H01S5/101 ,  H01S5/1032 ,  H01S5/1039 ,  H01S5/125 ,  Y10T29/49002

Abstract: A chaotic light generator device comprises laser structures integrated on a common substrate. Each laser structure comprises a ridge of light amplifying material that forms a waveguide extending between at least partly reflective surfaces. Each laser structure comprises an injection electrode for injecting electric current into the ridge of light amplifying material. The laser structures are mutually coupled for exchanging light. A current feed circuit is coupled to the electrodes and configured to apply mutually different current densities to the electrodes of the laser structures. Choosing different lengths of the laser structures and suitable current densities, chaotic light emission is achieved suitable for telecommunication. Ultrashort pulses result from coupling of Eigenmodes with relaxation oscillations.

Abstract translation: 混沌光发生器装置包括集成在共同衬底上的激光结构。 每个激光器结构包括形成在至少部分反射表面之间延伸的波导的光放大材料的脊。 每个激光结构包括用于将电流注入到光放大材料的脊中的注入电极。 激光结构相互耦合用于交换光。 电流馈电电路耦合到电极并且被配置为向激光结构的电极施加相互不同的电流密度。 选择不同长度的激光器结构和合适的电流密度，实现混沌发光适合电信。 超短脉冲是由本征模与耦合振荡产生的。

公开(公告)号：US07704759B2

公开(公告)日：2010-04-27

申请号：US12208833

申请日：2008-09-11

Applicant: Toru Takayama ,  Satoshi Murasawa ,  Yasuhiro Fujimoto ,  Hisashi Nakayama ,  Isao Kidoguchi

Inventor： Toru Takayama ,  Satoshi Murasawa ,  Yasuhiro Fujimoto ,  Hisashi Nakayama ,  Isao Kidoguchi

IPC: H01L21/00

CPC classification number: H01S5/2231 ,  B82Y20/00 ,  H01S5/0655 ,  H01S5/0658 ,  H01S5/209 ,  H01S5/2219 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4087

Abstract: In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.

Abstract translation: 在半导体激光器件中，将发射不同波长的光的多个发光元件集成在基板上。 每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。 设置在有源层顶部的包层之一是具有台面脊部的上包层。 用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。 蚀刻阻挡层的厚度在发光元件之间变化。

公开(公告)号：US20080137694A1

公开(公告)日：2008-06-12

申请号：US11932937

申请日：2007-10-31

Applicant: Kyung Hyun PARK ,  Hyun Sung Ko ,  Yong Ahn Leem ,  Min Yong Jeon ,  Eun Deok Sim ,  Sung Bock Kim

Inventor： Kyung Hyun PARK ,  Hyun Sung Ko ,  Yong Ahn Leem ,  Min Yong Jeon ,  Eun Deok Sim ,  Sung Bock Kim

IPC: H01S3/098 ,  H01S3/08

CPC classification number: H01S5/0625 ,  H01S5/0658

Abstract: Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.

Abstract translation: 提供了一种自脉动激光二极管，包括：用作反射器的分布反馈（DFB）部分; 连接到DFB部分并且在一端具有劈裂小面的增益部分; 相位控制部，其插入在所述DFB部和所述增益部之间; 以及外部射频（RF）输入部分，将外部RF信号施加到DFB部分和增益部分中的至少一个。

公开(公告)号：US07359417B2

公开(公告)日：2008-04-15

申请号：US10887803

申请日：2004-07-12

Applicant: Takashi Kimura

Inventor： Takashi Kimura

IPC: H01S5/00

CPC classification number: H01S5/2231 ,  H01S5/0658 ,  H01S5/2218 ,  H01S5/2222

Abstract: The invention has such a double hetero structure (11) that an active layer (3) is sandwiched by an n-type clad layer (2) and a p-type clad layer (4) on a semiconductor substrate (1) made of GaAs. In the p-type clad layer (4), for example, an n-type current constriction layer (6) consisting of at least two layers is provided in such a configuration that a first layer (6a) thereof closer to the active layer is made of a material having almost the same refractive index as the p-type clad layer and a second layer (6b) thereof farther from the active layer is made of a material having a smaller refractive index than the first layer (6a). By this configuration, a self-excitement type and high-power semiconductor laser can be obtained which operates in a stable manner up to a high power without generating a kink while being self-excited at a low power. Another embodiment of the invention comprises a current constriction layer having an n-type in which a stripe trench is formed in the p-type clad layer, and a light confinement layer having a smaller refractive index than the p-type clad layer is formed at the current constriction layer facing the active layer, so as to be of a p-type or non-doped type. By this configuration, a semiconductor laser can be obtained which operates up to a high power without generating a kink.

Abstract translation: 本发明具有这样的双异质结构（11），即由GaAs构成的半导体衬底（1）上的n型覆盖层（2）和p型覆盖层（4）夹持有源层（3） 。 在p型覆盖层（4）中，例如，由至少两层构成的n型电流限制层（6）以使其第一层（6a）更靠近有源层 由具有与p型覆盖层几乎相同的折射率的材料制成，并且距离有源层更远的第二层（6b）由折射率小于第一层（6a）的材料制成， 。 通过这种构造，可以获得在高功率下稳定运行而不产生扭结而在低功率下自激的自激兴奋型和大功率半导体激光器。 本发明的另一实施例包括具有n型的电流收缩层，其中在p型覆层中形成条状沟槽，并且形成具有比p型覆盖层更小的折射率的光限制层 电流收缩层面向有源层，以便是p型或非掺杂型。 通过这种构造，可以获得高达功率而不产生扭结的半导体激光器。

公开(公告)号：US07005680B2

公开(公告)日：2006-02-28

申请号：US10681443

申请日：2003-10-07

Applicant: Nobuyuki Otsuka ,  Yoshiaki Hasegawa ,  Gaku Sugahara ,  Yasutoshi Kawaguchi

Inventor： Nobuyuki Otsuka ,  Yoshiaki Hasegawa ,  Gaku Sugahara ,  Yasutoshi Kawaguchi

IPC: H01L33/00

CPC classification number: H01S5/0425 ,  H01L27/15 ,  H01S5/0422 ,  H01S5/0625 ,  H01S5/0658

Abstract: The semiconductor light-emitting device of the present invention includes a first semiconductor layer of a first conductivity type formed substantially in a uniform thickness on a substrate and a second semiconductor layer of a second conductivity type formed substantially in a uniform thickness on the first semiconductor layer. The device further includes an active layer, formed substantially in a uniform thickness between the first semiconductor layer and the second semiconductor layer, for generating emission light. The device also comprises a first electrode for supplying a drive current to the first semiconductor layer and a second electrode for supplying a drive current to the second semiconductor layer. The device is adapted that the first or second electrode is a divided electrode comprising a plurality of conductive members spaced apart from each other.

Abstract translation: 本发明的半导体发光器件包括在基板上基本上形成为均匀厚度的第一导电类型的第一半导体层和在第一半导体层上形成为基本上均匀厚度的第二导电类型的第二半导体层 。 该器件还包括在第一半导体层和第二半导体层之间基本上以均匀厚度形成的有源层，用于产生发射光。 该器件还包括用于向第一半导体层提供驱动电流的第一电极和用于向第二半导体层提供驱动电流的第二电极。 该装置适于使第一或第二电极是包括彼此间隔开的多个导电构件的分割电极。

公开(公告)号：US06847666B2

公开(公告)日：2005-01-25

申请号：US09819969

申请日：2001-03-28

Applicant: Masaki Ohya ,  Hiroaki Fujii ,  Kenji Endo

Inventor： Masaki Ohya ,  Hiroaki Fujii ,  Kenji Endo

IPC: H01S5/065 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01S5/00

CPC classification number: H01S5/2231 ,  H01S5/0658 ,  H01S5/2206 ,  H01S5/2219 ,  H01S5/2226

Abstract: A self-sustained pulsating laser diode in which a region in an active layer functions as a saturable absorber has at least five and no more than ten quantum wells, p-type cladding layer flat part with a layer thickness of at least 300 nm and no greater than 500 nm, and a p-type cladding layer flat part with a carrier density of at least 1×1017 cm−3 and no greater than 5×1017 cm−3. This laser diode achieves a sufficiently small current distribution compared with the light distribution in the lateral direction, thereby enabling stable self-sustained pulsating operation up to a high temperature, which was difficult to achieve in the past.

Abstract translation: 一种自持脉动激光二极管，其中有源层中的区域用作可饱和吸收体具有至少五个且不超过十个量子阱，层厚度至少为300nm的p型包层平坦部分和没有 大于500nm的p型包覆层平坦部分，载流子密度为至少1×10 17 cm -3且不大于5×10 17 cm -3。 该激光二极管与横向的光分布相比，实现了足够小的电流分布，从而能够在高温下稳定地进行自持脉动操作，这在以往难以实现。

公开(公告)号：US20040264959A1

公开(公告)日：2004-12-30

申请号：US10692175

申请日：2003-10-22

Inventor： James P. Siepmann

IPC: H04J014/00

CPC classification number: H04B10/508 ,  H01S5/005 ,  H01S5/0428 ,  H01S5/0658

Abstract: An optoelectronic timing system includes an optical timing compensation system in which optical pulses developed by a semiconductor laser are advanced or retarded based upon an expected arrival time. The pulses are directed into a number of time-quantifiable optical paths. Time quantification for a pulse is based upon the time required for a pulse to travel a particular length at the speed of light. Pulses are directed into an advancing path or a retarding path by optical switches which compare an expected arrival time of a new pulse to an expected arrival time based on a previous pulse. The optical compensation system is incorporated into a precision timing device in which multiple optical paths, having decreasing lengths in a defined pattern, are arranged in serial fashion so as to have each subsequent path of the series represent a travel time one order of magnitude different than a travel time of an adjacent path. Timing signals are developed by coupling an optical detector to each of the multiple optical paths.

Abstract translation: 光电定时系统包括光学定时补偿系统，其中基于预期到达时间，半导体激光器产生的光脉冲被提前或延迟。 脉冲被引导到多个时间可量化光路中。 脉冲的时间量化基于脉冲以光速行进特定长度所需的时间。 脉冲通过光开关引导到前进路径或延迟路径中，其基于先前脉冲将新脉冲的预期到达时间与预期到达时间进行比较。 光学补偿系统被并入到精确定时装置中，其中以规定的图案具有减小的长度的多个光路以串联方式排列，以使得该系列的每个后续路径代表不同于 相邻路径的行进时间。 通过将光学检测器耦合到多个光路中的每一个来开发定时信号。