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公开(公告)号：US20120285370A1
公开(公告)日：2012-11-15
申请号：US13394982
申请日：2010-09-14
IPC分类号： C30B23/02
CPC分类号： C30B29/36 , C01B32/956 , C30B23/005
摘要： In SiC sublimation crystal growth, a crucible is charged with SiC source material and SiC seed crystal in spaced relation and a baffle is disposed in the growth crucible around the seed crystal. A first side of the baffle in the growth crucible defines a growth zone where a SiC single crystal grows on the SiC seed crystal. A second side of the baffle in the growth crucible defines a vapor-capture trap around the SiC seed crystal. The growth crucible is heated to a SiC growth temperature whereupon the SiC source material sublimates and forms a vapor which is transported to the growth zone where the SiC crystal grows by precipitation of the vapor on the SiC seed crystal. A fraction of this vapor enters the vapor-capture trap where it is removed from the growth zone during growth of the SiC crystal.
摘要翻译： 在SiC升华晶体生长中，坩埚以间隔的关系装载有SiC源材料和SiC晶种，并且在晶种周围的生长坩埚中设置挡板。 生长坩埚中挡板的第一侧限定了SiC单晶在SiC晶种上生长的生长区。 生长坩埚中挡板的第二面限定了SiC籽晶周围的气相捕获阱。 将生长坩埚加热至SiC生长温度，随后，SiC源材料升华并形成蒸气，其通过在SiC晶种上沉淀蒸汽而转移至SiC晶体生长的生长区。 该蒸汽的一部分进入蒸气捕获阱，其中在SiC晶体生长期间将其从生长区移除。
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公开(公告)号：US20120103249A1
公开(公告)日：2012-05-03
申请号：US13255151
申请日：2010-03-25
CPC分类号： C30B29/36 , C30B23/005 , C30B23/06 , C30B23/066
摘要： A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.
摘要翻译： 物理蒸汽输送生长系统包括装载有SiC源材料的生长室和间隔开的SiC晶种，以及设置在生长室中至少部分透气的外壳。 该包络将生长室分成包括SiC源材料的源室和包括SiC晶种的结晶室。 外壳由在SiC晶种在结晶室中的SiC单晶的升华生长期间产生的蒸汽反应的材料形成，以产生在SiC生长期间作为C的额外来源的C轴承蒸气 单晶在SiC晶种上。
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公开(公告)号：US10294584B2
公开(公告)日：2019-05-21
申请号：US13255151
申请日：2010-03-25
摘要： A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.
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