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1.发明授权Axial gradient transport growth process and apparatus utilizing resistive heating 有权轴向梯度输送生长过程和利用电阻加热的装置公开(公告)号：US09228274B2
公开(公告)日：2016-01-05
申请号：US12632906
申请日：2009-12-08
CPC分类号： C30B23/063 , C23C14/243 , C23C14/26 , C23C14/541 , C30B23/06 , C30B23/066 , C30B29/36
摘要： A crucible has a first resistance heater is disposed in spaced relation above the top of the crucible and a second resistance heater with a first resistive section disposed in spaced relation beneath the bottom of the crucible and with a second resistive section disposed in spaced relation around the outside of the side of the crucible. The crucible is charged with a seed crystal at the top of an interior of the crucible and a source material in the interior of the crucible in spaced relation between the seed crystal and the bottom of the crucible. Electrical power of a sufficient extent is applied to the first and second resistance heaters to create in the interior of the crucible a temperature gradient of sufficient temperature to cause the source material to sublimate and condense on the seed crystal thereby forming a growing crystal.
摘要翻译： 坩埚具有第一电阻加热器，其间隔开地设置在坩埚的顶部之上，第二电阻加热器具有第一电阻部分，第一电阻部分以坩埚底部的间隔设置，并且第二电阻部分间隔设置在坩埚的顶部 在坩埚的侧面之外。 在坩埚的内部的顶部装载坩埚，坩埚内部的源材料以晶种和坩埚的底部间隔开来。 将足够程度的电力施加到第一和第二电阻加热器，以在坩埚内部产生足够温度的温度梯度，以使源材料在晶种上升华和冷凝，从而形成生长晶体。
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公开(公告)号：US20060018816A1
公开(公告)日：2006-01-26
申请号：US11061161
申请日：2005-02-18
CPC分类号： C01G9/02 , C01P2006/42 , C30B11/00 , C30B25/02 , C30B29/16
摘要： A new diluted magnetic semiconductor-spintronics material and method for its production are disclosed. The material can be in bulk or thin film form. The material comprises zinc oxide (ZnO) which includes a transition element or a rare earth lanthanide, or both, in an amount sufficient to change the material from non-magnetic state to room temperature ferromagnetic state. The bulk crystal is grown by high pressure melt technique. A new method for growing transition metal doped ZnO thin films is presented. A metalorganic chemical vapor deposition (MOCVD) technique is used to grow thin films of transition metal doped ZnO and organic compounds have been used as source materials.
摘要翻译： 公开了一种新的稀释磁半导体自旋电子材料及其制造方法。 该材料可以是大量或薄膜形式。 该材料包括氧化锌（ZnO），其包含过渡元素或稀土镧系元素，或两者，其量足以将材料从非磁性状态改变为室温铁磁性状态。 通过高压熔融技术生长本体晶体。 提出了一种生长过渡金属掺杂ZnO薄膜的新方法。 使用金属有机化学气相沉积（MOCVD）技术生长掺杂过渡金属的ZnO薄膜，有机化合物已被用作原料。
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公开(公告)号：US20120285370A1
公开(公告)日：2012-11-15
申请号：US13394982
申请日：2010-09-14
IPC分类号： C30B23/02
CPC分类号： C30B29/36 , C01B32/956 , C30B23/005
摘要： In SiC sublimation crystal growth, a crucible is charged with SiC source material and SiC seed crystal in spaced relation and a baffle is disposed in the growth crucible around the seed crystal. A first side of the baffle in the growth crucible defines a growth zone where a SiC single crystal grows on the SiC seed crystal. A second side of the baffle in the growth crucible defines a vapor-capture trap around the SiC seed crystal. The growth crucible is heated to a SiC growth temperature whereupon the SiC source material sublimates and forms a vapor which is transported to the growth zone where the SiC crystal grows by precipitation of the vapor on the SiC seed crystal. A fraction of this vapor enters the vapor-capture trap where it is removed from the growth zone during growth of the SiC crystal.
摘要翻译： 在SiC升华晶体生长中，坩埚以间隔的关系装载有SiC源材料和SiC晶种，并且在晶种周围的生长坩埚中设置挡板。 生长坩埚中挡板的第一侧限定了SiC单晶在SiC晶种上生长的生长区。 生长坩埚中挡板的第二面限定了SiC籽晶周围的气相捕获阱。 将生长坩埚加热至SiC生长温度，随后，SiC源材料升华并形成蒸气，其通过在SiC晶种上沉淀蒸汽而转移至SiC晶体生长的生长区。 该蒸汽的一部分进入蒸气捕获阱，其中在SiC晶体生长期间将其从生长区移除。
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4.发明申请Axial Gradient Transport Growth Process and Apparatus Utilizing Resistive Heating 有权轴向梯度运输生长过程和利用电阻加热的装置公开(公告)号：US20100139552A1
公开(公告)日：2010-06-10
申请号：US12632906
申请日：2009-12-08
IPC分类号： C30B23/06
CPC分类号： C30B23/063 , C23C14/243 , C23C14/26 , C23C14/541 , C30B23/06 , C30B23/066 , C30B29/36
摘要： A crucible has a first resistance heater is disposed in spaced relation above the top of the crucible and a second resistance heater with a first resistive section disposed in spaced relation beneath the bottom of the crucible and with a second resistive section disposed in spaced relation around the outside of the side of the crucible. The crucible is charged with a seed crystal at the top of an interior of the crucible and a source material in the interior of the crucible in spaced relation between the seed crystal and the bottom of the crucible. Electrical power of a sufficient extent is applied to the first and second resistance heaters to create in the interior of the crucible a temperature gradient of sufficient temperature to cause the source material to sublimate and condense on the seed crystal thereby forming a growing crystal.
摘要翻译： 坩埚具有第一电阻加热器，其间隔开地设置在坩埚的顶部之上，第二电阻加热器具有第一电阻部分，第一电阻部分以坩埚底部的间隔设置，并且第二电阻部分间隔设置在坩埚的顶部 在坩埚的侧面之外。 在坩埚的内部的顶部装载坩埚，坩埚内部的源材料以晶种和坩埚的底部间隔开来。 将足够程度的电力施加到第一和第二电阻加热器，以在坩埚内部产生足够温度的温度梯度，以使源材料在晶种上升华和冷凝，从而形成生长晶体。
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