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    Methods of thermal processing and rapid thermal processing
    5.
    发明授权
    Methods of thermal processing and rapid thermal processing 有权
    热处理和快速热处理方法

    公开(公告)号：US06287927B1

    公开(公告)日：2001-09-11

    申请号：US09488974

    申请日：2000-01-20

    Applicant: Robert Burke ,  Mark Eyolfson

    Inventor： Robert Burke ,  Mark Eyolfson

    IPC: H01L21336

    CPC classification number: H01L21/324

    Abstract: In one aspect, the invention includes a method of thermal processing comprising: a) providing a semiconductor substrate, the semiconductor substrate supporting a material that is to be thermally processed; b) forming a sacrificial mass over the material, the mass comprising an inner portion and an outer portion, the inner portion having a different composition than the outer portion and being nearer the material than the outer portion; c) exposing the mass to radiation to heat the mass, the exposing being for a period of time sufficient for the material to absorb heat from the mass and be thermally processed thereby; and d) removing the mass from over the material. In another aspect, the invention includes a method of thermal processing comprising: a) providing a semiconductor substrate, the substrate supporting a material that is to be thermally processed; b) forming a first sacrificial layer over the material; c) forming a second sacrificial layer over the first sacrificial layer, the second sacrificial layer comprising a different composition than the first sacrificial layer; d) exposing the second sacrificial layer to radiation to heat the second layer, the exposing being for a period of time sufficient for the material to absorb heat from the sacrificial layer and be thermally processed thereby; e) cooling the material and the sacrificial layers; and f) removing the sacrificial layers from over the material.

    Abstract translation: 一方面，本发明包括热处理方法，包括：a）提供半导体衬底，所述半导体衬底支撑待热处理的材料; b）在所述材料上形成牺牲物质，所述物质包括内部部分和外部部分，所述内部部分具有与外部部分不同的组成并且比所述外部部分更接近材料; c）将所述物质暴露于辐射以加热所述物质，所述暴露期间足以使所述物质从所述物质吸收热量并进行热处理; 以及d）从材料上取出物料。 另一方面，本发明包括一种热处理方法，包括：a）提供半导体衬底，该衬底支撑待热处理的材料; b）在所述材料上形成第一牺牲层; c）在所述第一牺牲层上形成第二牺牲层，所述第二牺牲层包含与所述第一牺牲层不同的组成; d）将所述第二牺牲层暴露于辐射以加热所述第二层，所述暴露期间足以使所述材料从所述牺牲层吸收热量并进行热处理; e）冷却材料和牺牲层; 以及f）从材料上方去除牺牲层。

    Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light
    6.
    发明授权
    Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light 失效
    使用过滤的荧光，反射或吸收光进行自动化，原位材料检测的方法和装置

    公开(公告)号：US07102737B2

    公开(公告)日：2006-09-05

    申请号：US10861738

    申请日：2004-06-04

    Applicant: Mark Eyolfson ,  Elton J. Hochhalter ,  Joe Lee Phillips ,  David R. Johnson ,  Peter S. Frank

    Inventor： Mark Eyolfson ,  Elton J. Hochhalter ,  Joe Lee Phillips ,  David R. Johnson ,  Peter S. Frank

    IPC: G01N21/64 ,  G01N21/88

    CPC classification number: G01N21/9501 ,  G01N21/643 ,  G01N21/94 ,  G01N2021/646

    Abstract: A method and apparatus for detection of a particular material, such as photo-resist material, on a sample surface are disclosed. A narrow beam of light is projected onto the sample surface and the fluoresced and/or reflected light intensity at a particular wavelength band is measured by a light detector. The light intensity is converted to a numerical value and transmitted electronically to a logic circuit, which determines the proper disposition of the sample. The logic circuit controls a sample-handling robotic device which sequentially transfers samples to and from a stage for testing and subsequent disposition. The method is particularly useful for detecting photo-resist material on the surface of a semiconductor wafer.

    Abstract translation: 公开了一种在样品表面上检测特定材料如光致抗蚀剂材料的方法和装置。 将窄光束投影到样品表面上，并且通过光检测器测量在特定波长带处的荧光和/或反射光强度。 光强度被转换为数值，并以电子方式传输到逻辑电路，这决定了样品的正确配置。 逻辑电路控制一个样本处理机器人装置，该装置将样本顺序地传送到用于测试和随后的配置的阶段。 该方法对于在半导体晶片的表面上检测光致抗蚀剂材料特别有用。

    Methods of thermal processing and rapid thermal processing
    8.
    发明授权
    Methods of thermal processing and rapid thermal processing 失效
    热处理和快速热处理方法

    公开(公告)号：US6090677A

    公开(公告)日：2000-07-18

    申请号：US70534

    申请日：1998-04-29

    Applicant: Robert Burke ,  Mark Eyolfson

    Inventor： Robert Burke ,  Mark Eyolfson

    IPC: H01L21/324 ,  H01L21/336

    CPC classification number: H01L21/324

    Abstract: In one aspect, the invention includes a method of thermal processing comprising: a) providing a semiconductor substrate, the semiconductor substrate supporting a material that is to be thermally processed; b) forming a sacrificial mass over the material, the mass comprising an inner portion and an outer portion, the inner portion having a different composition than the outer portion and being nearer the material than the outer portion; c) exposing the mass to radiation to heat the mass, the exposing being for a period of time sufficient for the material to absorb heat from the mass and be thermally processed thereby; and d) removing the mass from over the material. In another aspect, the invention includes a method of thermal processing comprising: a) providing a semiconductor substrate, the substrate supporting a material that is to be thermally processed; b) forming a first sacrificial layer over the material; c) forming a second sacrificial layer over the first sacrificial layer, the second sacrificial layer comprising a different composition than the first sacrificial layer; d) exposing the second sacrificial layer to radiation to heat the second layer, the exposing being for a period of time sufficient for the material to absorb heat from the sacrificial layer and be thermally processed thereby; e) cooling the material and the sacrificial layers; and f) removing the sacrificial layers from over the material.

    Abstract translation: 一方面，本发明包括热处理方法，包括：a）提供半导体衬底，所述半导体衬底支撑待热处理的材料; b）在所述材料上形成牺牲物质，所述物质包括内部部分和外部部分，所述内部部分具有与外部部分不同的组成并且比所述外部部分更接近材料; c）将所述物质暴露于辐射以加热所述物质，所述暴露期间足以使所述物质从所述物质吸收热量并进行热处理; 以及d）从材料上取出物料。 另一方面，本发明包括一种热处理方法，包括：a）提供半导体衬底，该衬底支撑待热处理的材料; b）在所述材料上形成第一牺牲层; c）在所述第一牺牲层上形成第二牺牲层，所述第二牺牲层包含与所述第一牺牲层不同的组成; d）将所述第二牺牲层暴露于辐射以加热所述第二层，所述暴露期间足以使所述材料从所述牺牲层吸收热量并进行热处理; e）冷却材料和牺牲层; 以及f）从材料上方去除牺牲层。

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