公开(公告)号：US07455955B2

公开(公告)日：2008-11-25

申请号：US10373897

申请日：2003-02-24

申请人： Wu-Sheng Shih ,  James E. Lamb, III ,  Juliet Ann Minzey Snook ,  Mark G. Daffron

发明人： Wu-Sheng Shih ,  James E. Lamb, III ,  Juliet Ann Minzey Snook ,  Mark G. Daffron

IPC分类号： G03F7/26

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/094 ,  G03F7/095 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31053 ,  H01L21/31144 ,  Y10T428/24802 ,  Y10T428/24851

摘要： The present invention is directed towards contact planarization methods that can be used to planarize substrate surfaces having a wide range of topographic feature densities for lithography applications. These processes use thermally curable, photo-curable, or thermoplastic materials to provide globally planarized surfaces over topographic substrate surfaces for lithography applications. Additional coating(s) with global planarity and uniform thickness can be obtained on the planarized surfaces. These inventive methods can be utilized with single-layer, bilayer, or multi-layer processing involving bottom anti-reflective coatings, photoresists, hardmasks, and other organic and inorganic polymers in an appropriate coating sequence as required by the particular application. More specifically, this invention produces globally planar surfaces for use in dual damascene and bilayer processes with greatly improved photolithography process latitude. The invention further provides globally planar surfaces to transfer patterns using imprint lithography, nano-imprint lithography, hot-embossing lithography and stamping pattern transfer techniques.

摘要翻译： 本发明涉及可用于平面化具有用于光刻应用的宽范围的地形特征密度的衬底表面的接触平面化方法。 这些方法使用可热固化，可光固化或热塑性材料，以在光刻应用的地形衬底表面上提供全局平面化的表面。 可以在平坦化表面上获得具有全局平面度和均匀厚度的附加涂层。 这些本发明的方法可以用于单层，双层或多层加工，其涉及底部抗反射涂层，光致抗蚀剂，硬掩模和其它有机和无机聚合物，按照特定应用所要求的合适的涂层顺序。 更具体地，本发明产生用于双镶嵌和双层工艺的全局平面表面，其具有极大改善的光刻工艺纬度。 本发明还提供了使用压印光刻，纳米压印光刻，热压印光刻和冲压图案转印技术来传输图案的全局平面表面。