公开(公告)号：US20080038448A1

公开(公告)日：2008-02-14

申请号：US11731075

申请日：2007-03-30

Applicant: Arnold Kholodenko ,  Wing Cheng ,  Helen Cheng ,  Mark Mardelboym ,  Grant Peng ,  Katrina Mikhaylichenko

Inventor： Arnold Kholodenko ,  Wing Cheng ,  Helen Cheng ,  Mark Mardelboym ,  Grant Peng ,  Katrina Mikhaylichenko

IPC: B05C11/00 ,  B05D3/00

CPC classification number: H01L21/67051 ,  H01L21/6719

Abstract: In one embodiment a chamber body enabling semiconductor processing equipment to be at least partially housed in the chamber body, the semiconductor processing equipment being configured to process a substrate using fluids is disclosed. The chamber body being comprised of a base material implemented to form the chamber body, the chamber body defined by at least a bottom surface and wall surfaces that are integrally connected to the bottom surface to enable capture of overflows of fluids during the processing of the substrate over the chamber body. Additionally, the base material is metallic. The chamber body also has a primer coat material disposed over and on the base material. The primer coat material has metallic constituents to define an integrated bond with the base material along with non-metallic constituents. The chamber body further includes a main coat material disposed over and on the primer coat material. The main coat material being defined from non-metallic constituents, the non-metallic constituents of the main coat material defining an integrated bond with the primer coat material. The main coat material defined to completely overlie all the metallic constituents of the primer coat.

Abstract translation: 在一个实施例中，公开了使半导体处理设备能够至少部分地容纳在室主体中的室主体，半导体处理设备被配置为使用流体处理衬底。 腔室主体包括被实施成形成腔室主体的基底材料，至少由底部表面限定的腔体主体和与底部表面一体连接的壁表面，以在衬底的处理期间捕获流体溢出物 在房间的身体。 另外，基材是金属的。 腔室主体还具有设置在基底材料上方的底漆涂层材料。 底涂层材料具有金属成分，以与非金属组分一起界定与基材的整体结合。 室主体还包括设置在底漆涂层材料上和之上的主涂层材料。 主涂层材料由非金属组分定义，主涂层材料的非金属组分限定与底漆涂层材料的整体结合。 主涂层材料被定义为完全覆盖底漆涂层的所有金属成分。