公开(公告)号：US20090220801A1

公开(公告)日：2009-09-03

申请号：US12040785

申请日：2008-02-29

申请人： Brian Wagner ,  Travis J. Randall ,  Thomas J. Knight ,  David J. Knuteson ,  David Kahler ,  Andre E. Berghmans ,  Sean R. McLaughlin ,  Narsingh B. Singh ,  Mark Usefara

发明人： Brian Wagner ,  Travis J. Randall ,  Thomas J. Knight ,  David J. Knuteson ,  David Kahler ,  Andre E. Berghmans ,  Sean R. McLaughlin ,  Narsingh B. Singh ,  Mark Usefara

IPC分类号： C23C14/34 ,  B32B9/04

CPC分类号： C30B29/36 ,  C30B23/02

摘要： The disclosure relates to a method and apparatus for growth of high-purity 6H SiC single crystal using a sputtering technique. In one embodiment, the disclosure relates to a method for depositing a high purity 6H-SiC single crystal film on a substrate, the method including: providing a silicon substrate having an etched surface; placing the substrate and an SiC source in a deposition chamber; achieving a first vacuum level in the deposition chamber; pressurizing the chamber with a gas; depositing the SiC film directly on the etched silicon substrate from a sputtering source by: heating the substrate to a temperature below silicon melting point, using a low energy plasma in the deposition chamber; and depositing a layer of hexagonal SiC film on the etched surface of the substrate.

摘要翻译： 本公开涉及使用溅射技术生长高纯度6H SiC单晶的方法和装置。 在一个实施方案中，本公开涉及一种用于在基底上沉积高纯度6H-SiC单晶膜的方法，所述方法包括：提供具有蚀刻表面的硅衬底; 将衬底和SiC源放置在沉积室中; 在沉积室中达到第一真空度; 用气体对腔室加压; 通过以下方式将SiC膜直接沉积在蚀刻的硅衬底上：使用沉积室中的低能量等离子体将衬底加热到​​低于硅熔点的温度; 以及在衬底的蚀刻表面上沉积一层六方形的SiC膜。