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    Metrology Mark with Elements Arranged in a Matrix, Method of Manufacturing Same and Alignment Method
    4.
    发明申请
    Metrology Mark with Elements Arranged in a Matrix, Method of Manufacturing Same and Alignment Method 审中-公开
    具有矩阵中的元素的计量标记，制造方法和对准方法

    公开(公告)号：US20100052191A1

    公开(公告)日：2010-03-04

    申请号：US12201605

    申请日：2008-08-29

    申请人： Sven Trogisch ,  Joerg Tschischgale ,  Markus Bender

    发明人： Sven Trogisch ,  Joerg Tschischgale ,  Markus Bender

    IPC分类号： H01L23/544 ,  H01L21/76

    CPC分类号： H01L23/544 ,  G03F9/708 ,  G03F9/7084 ,  H01L2223/54426 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of manufacturing an integrated circuit provides a metrology mark (e.g., alignment mark or overlay mark). The method includes forming a first plurality of first structures arranged in a matrix in a substrate. Portions of the matrix are covered with a mask such that first portions of the matrix are left exposed and second portions of the matrix are covered. Signal response properties of exposed ones of the first structures in the matrix are altered to form a metrology mark. The metrology mark includes first and second mark portions with different signal response properties and which are aligned to a virtual grid. The evaluation of precisely positioned metrology marks may be improved with low impact on process complexity.

    摘要翻译： 集成电路的制造方法提供计量标记（例如，对准标记或重叠标记）。 该方法包括在衬底中形成以矩阵形式布置的第一多个第一结构。 矩阵的部分用掩模覆盖，使得矩阵的第一部分被暴露并且覆盖矩阵的第二部分。 矩阵中第一个结构中暴露的结构的信号响应特性被改变以形成计量标记。 测量标记包括具有不同信号响应特性并且与虚拟网格对准的第一和第二标记部分。 对精确定位的计量标记的评估可能会改善，对过程复杂性的影响较小。

    Reflective photomask and reflection-type mask blank
    6.
    发明授权
    Reflective photomask and reflection-type mask blank 有权

    公开(公告)号：US10031409B2

    公开(公告)日：2018-07-24

    申请号：US15179775

    申请日：2016-06-10

    申请人： Markus Bender ,  Thorsten Schedel

    发明人： Markus Bender ,  Thorsten Schedel

    IPC分类号： G03F1/24 ,  G03F1/22 ,  G03F1/38

    摘要： A reflective photomask includes a substrate with a substrate layer of a low thermal expansion material. The substrate layer includes a main portion of a first structural configuration and an auxiliary portion of a second structural configuration of the low thermal expansion material. The auxiliary portion is formed in a frame section surrounding a pattern section of the substrate. A multilayer mirror is formed on a first surface of the substrate. A reflectivity of the multilayer mirror is at least 50% at an exposure wavelength below 15 nm. A frame trench extending through the multilayer mirror exposes the substrate in the frame section. The auxiliary portion may include scatter centers for out-of-band radiation.

    REFLECTIVE PHOTOMASK AND REFLECTION-TYPE MASK BLANK
    7.
    发明申请
    REFLECTIVE PHOTOMASK AND REFLECTION-TYPE MASK BLANK 审中-公开

    公开(公告)号：US20170108766A1

    公开(公告)日：2017-04-20

    申请号：US15179775

    申请日：2016-06-10

    申请人： Markus Bender ,  Thorsten Schedel

    发明人： Markus Bender ,  Thorsten Schedel

    IPC分类号： G03F1/24

    CPC分类号： G03F1/24 ,  G03F1/38

    摘要： A reflective photomask includes a substrate with a substrate layer of a low thermal expansion material. The substrate layer includes a main portion of a first structural configuration and an auxiliary portion of a second structural configuration of the low thermal expansion material. The auxiliary portion is formed in a frame section surrounding a pattern section of the substrate. A multilayer mirror is formed on a first surface of the substrate. A reflectivity of the multilayer mirror is at least 50% at an exposure wavelength below 15 nm. A frame trench extending through the multilayer mirror exposes the substrate in the frame section. The auxiliary portion may include scatter centres for out-of-band radiation.

    Non-Telecentric Lithography Apparatus and Method of Manufacturing Integrated Circuits
    8.
    发明申请
    Non-Telecentric Lithography Apparatus and Method of Manufacturing Integrated Circuits 审中-公开
    非远心平版印刷设备及制造集成电路的方法

    公开(公告)号：US20090097001A1

    公开(公告)日：2009-04-16

    申请号：US11872266

    申请日：2007-10-15

    申请人： Sven Trogisch ,  Joerg Tschischgale ,  Markus Bender

    发明人： Sven Trogisch ,  Joerg Tschischgale ,  Markus Bender

    IPC分类号： G03B27/68 ,  G03B27/42

    CPC分类号： G03F7/70308 ,  G03F7/70216

    摘要： A lithography apparatus includes a condenser system and a projection system. The condenser system is configured to irradiate a mask with non-telecentric incident radiation. The projection system is configured to collect and focus a radiation diffracted at an absorber pattern on the mask to a sample. The projection system is further configured to compensate, in the diffracted radiation, a phase and/or intensity variation resulting from the diffraction of the non-telecentric incident radiation, wherein the diffraction results from an absorber pattern provided on the mask.

    摘要翻译： 光刻设备包括冷凝器系统和投影系统。 冷凝器系统被配置为用非远心入射辐射照射掩模。 投影系统被配置为将在掩模上的吸收体图案衍射的辐射聚集并聚焦到样品。 投影系统还被配置为在衍射辐射中补偿由非远心入射辐射的衍射产生的相位和/或强度变化，其中衍射来自设置在掩模上的吸收体图案。