Pulverized organic semiconductors and method for vapor phase deposition onto a support
    8.
    发明申请
    Pulverized organic semiconductors and method for vapor phase deposition onto a support 审中-公开
    粉碎的有机半导体和气相沉积到载体上的方法

    公开(公告)号:US20070042178A1

    公开(公告)日:2007-02-22

    申请号:US10554841

    申请日:2004-04-16

    IPC分类号: C23C16/00

    摘要: The invention relates to a process for vapor deposition of one or more compounds onto a support, in which (i) the compound is introduced in a solid or gaseous state into a carrier gas stream, (ii) the compound is present in a gaseous state in the carrier gas stream, (iii) the gaseous compound is precipitated, (iv) the compound precipitated in step (iii) is once again brought into the gaseous state, and (v) the gaseous compound is subsequently precipitated on the support, wherein the carrier gas stream comprising the gaseous compound(s) is cooled to a temperature below the sublimation temperature of the compound(s) by introduction of a gas stream.

    摘要翻译: 本发明涉及将一种或多种化合物气相沉积到载体上的方法,其中(i)化合物以固态或气态导入载气流中,(ii)化合物以气态存在 在载气流中,(iii)气态化合物沉淀,(iv)在步骤(iii)中沉淀的化合物再次进入气态,(v)气态化合物随后在载体上沉淀,其中 通过引入气流将包含气态化合物的载气流冷却至低于化合物升华温度的温度。