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1.发明授权公开(公告)号：US08354135B2
公开(公告)日：2013-01-15
申请号：US12394288
申请日：2009-02-27
CPC分类号： C23C16/402 , C23C16/46 , C23C16/52
摘要： There are provided a thermal processing apparatus, a method for regulating a temperature of a thermal processing apparatus, and a program, by which a temperature can be easily regulated. A control part 50 of a thermal processing apparatus 1 controls the apparatus so as to deposit SiO2 films on semiconductor wafers W, and judges whether the SiO2 films satisfy an in-plane uniformity. When the in-plane uniformity is not judged to be satisfied, the control part 50 calculates a temperature of a preheating part 23 by which temperature the in-plane uniformity can be satisfied. The control part 50 controls the apparatus so as to deposit SiO2 films on semiconductor wafers W under process conditions in which the temperature of the preheating part 23 has been varied into the calculated temperature, and the temperature of the preheating parts 23 is regulated. When the in-plane uniformity is judged to be satisfied, the control part 50 regulates temperatures of heaters 11 to 15 by the same procedure so as to satisfy an inter-plane uniformity.
摘要翻译： 提供了一种热处理装置，用于调节热处理装置的温度的方法和可以容易地调节温度的程序。 热处理装置1的控制部件50控制该装置以在半导体晶片W上沉积SiO 2膜，并判断SiO 2膜是否满足面内均匀性。 当没有判断出面内均匀性被满足时，控制部50计算能够满足面内均匀性的温度的预热部23的温度。 控制部件50控制装置，以便在预热部件23的温度已经变化到计算温度的工艺条件下将SiO 2膜沉积在半导体晶片W上，并且预热部件23的温度被调节。 当判断面内均匀性被满足时，控制部50通过相同的程序来调节加热器11〜15的温度，以满足平面内的均匀性。
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公开(公告)号：US07637268B2
公开(公告)日：2009-12-29
申请号：US11454939
申请日：2006-06-19
申请人： Hitoshi Kato , Kazumi Kubo , Masahiko Kaminishi
发明人： Hitoshi Kato , Kazumi Kubo , Masahiko Kaminishi
CPC分类号： C23C16/0227 , C23C16/24
摘要： In a film formation method for a semiconductor process, a target substrate having a target surface with a natural oxide film is loaded into a reaction chamber, while setting the reaction chamber at a load temperature lower than a threshold temperature at which the natural oxide film starts being stabilized. Then, the natural oxide film is removed by etching, while supplying an etching gas containing chlorine without containing fluorine, and setting the reaction chamber at an etching pressure and an etching temperature lower than the threshold temperature. Then, the reaction chamber is purged. Then, a thin film is formed on the target surface by CVD, while supplying a film formation gas, and setting the reaction chamber at a film formation temperature.
摘要翻译： 在半导体工艺的成膜方法中，将具有自然氧化膜的目标表面的目标基板装载到反应室中，同时将反应室设定在低于自然氧化膜起始的阈值温度的负载温度 稳定下来 然后，通过蚀刻除去自然氧化物膜，同时在不含氟的情况下提供含氯的蚀刻气体，并将反应室设定在低于阈值温度的蚀刻压力和蚀刻温度。 然后，反应室被清除。 然后，通过CVD在目标表面上形成薄膜，同时供给成膜气体，并将反应室设定在成膜温度。
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3.发明申请THERMAL PROCESSING APPARATUS, METHOD FOR REGULATING TEMPERATURE OF THERMAL PROCESSING APPARATUS, AND PROGRAM 有权热处理装置，用于调节热处理装置的温度的方法和程序公开(公告)号：US20090232967A1
公开(公告)日：2009-09-17
申请号：US12394288
申请日：2009-02-27
CPC分类号： C23C16/402 , C23C16/46 , C23C16/52
摘要： There are provided a thermal processing apparatus, a method for regulating a temperature of a thermal processing apparatus, and a program, by which a temperature can be easily regulated. A control part 50 of a thermal processing apparatus 1 controls the apparatus so as to deposit SiO2 films on semiconductor wafers W, and judges whether the SiO2 films satisfy an in-plane uniformity. When the in-plane uniformity is not judged to be satisfied, the control part 50 calculates a temperature of a preheating part 23 by which temperature the in-plane uniformity can be satisfied. The control part 50 controls the apparatus so as to deposit SiO2 films on semiconductor wafers W under process conditions in which the temperature of the preheating part 23 has been varied into the calculated temperature, and the temperature of the preheating parts 23 is regulated. When the in-plane uniformity is judged to be satisfied, the control part 50 regulates temperatures of heaters 11 to 15 by the same procedure so as to satisfy an inter-plane uniformity.
摘要翻译： 提供了一种热处理装置，用于调节热处理装置的温度的方法和可以容易地调节温度的程序。 热处理装置1的控制部件50控制该装置以在半导体晶片W上沉积SiO 2膜，并判断SiO 2膜是否满足面内均匀性。 当没有判断出面内均匀性被满足时，控制部50计算能够满足面内均匀性的温度的预热部23的温度。 控制部件50控制装置，以便在预热部件23的温度已经变化到计算温度的工艺条件下将SiO 2膜沉积在半导体晶片W上，并且预热部件23的温度被调节。 当判断面内均匀性被满足时，控制部50通过相同的程序来调节加热器11〜15的温度，以满足平面内的均匀性。
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公开(公告)号：US20060288935A1
公开(公告)日：2006-12-28
申请号：US11454939
申请日：2006-06-19
申请人： Hitoshi Kato , Kazumi Kubo , Masahiko Kaminishi
发明人： Hitoshi Kato , Kazumi Kubo , Masahiko Kaminishi
CPC分类号： C23C16/0227 , C23C16/24
摘要： In a film formation method for a semiconductor process, a target substrate having a target surface with a natural oxide film is loaded into a reaction chamber, while setting the reaction chamber at a load temperature lower than a threshold temperature at which the natural oxide film starts being stabilized. Then, the natural oxide film is removed by etching, while supplying an etching gas containing chlorine without containing fluorine, and setting the reaction chamber at an etching pressure and an etching temperature lower than the threshold temperature. Then, the reaction chamber is purged. Then, a thin film is formed on the target surface by CVD, while supplying a film formation gas, and setting the reaction chamber at a film formation temperature.
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