公开(公告)号：US4658379A

公开(公告)日：1987-04-14

申请号：US666380

申请日：1984-10-30

申请人： Kazuyasu Fujishima ,  Kazuhiro Shimotori ,  Hideyuki Ozaki ,  Hideshi Miyatake ,  Masahiro Tomisato

发明人： Kazuyasu Fujishima ,  Kazuhiro Shimotori ,  Hideyuki Ozaki ,  Hideshi Miyatake ,  Masahiro Tomisato

IPC分类号： G11C8/10 ,  G11C29/00 ,  G11C29/04 ,  G11C7/00

CPC分类号： G11C29/787 ,  G11C8/10

摘要： A semiconductor memory device with a laser programmable redundancy circuit, which includes: a plurality of decoders for selecting a row or column of the memory; at least one spare decoder which is selected instead of a decoder connected to a faulty memory cell; a link element inserted in series with the precharging transistor and connected between the power supply and the decoder output line; a signal generator which generates a non-selection signal for making the object decoder unselected only when a spare decoder is selected, the signal generator being provided in the spare decoder; and a transistor, having a gate to which the non-selection signal is input, with the drain and the source thereof being connected to the decoder output and ground, respectively, the transistor being provided in the decoder.

摘要翻译： 一种具有激光可编程冗余电路的半导体存储器件，包括：多个解码器，用于选择存储器的行或列; 选择代替连接到故障存储器单元的解码器的至少一个备用解码器; 与预充电晶体管串联插入并连接在电源和解码器输出线之间的连接元件; 信号发生器，其仅在选择了备用解码器时产生用于使对象解码器未选择的非选择信号，所述信号发生器设置在所述备用解码器中; 以及晶体管，其具有输入非选择信号的栅极，漏极和源极分别连接到解码器输出和接地，晶体管分别设置在解码器中。