公开(公告)号：US20090179247A1

公开(公告)日：2009-07-16

申请号：US12354254

申请日：2009-01-15

申请人： Masako FUJII ,  Shigeki Obayashi ,  Naozumi Morino ,  Atsushi Hiraiwa ,  Shinichi Watarai ,  Takeshi Yoshida ,  Kazutoshi Oku ,  Masao Sugiyama ,  Yoshinori Kondo ,  Yuichi Egawa ,  Yoshiyuki Kaneko

发明人： Masako FUJII ,  Shigeki Obayashi ,  Naozumi Morino ,  Atsushi Hiraiwa ,  Shinichi Watarai ,  Takeshi Yoshida ,  Kazutoshi Oku ,  Masao Sugiyama ,  Yoshinori Kondo ,  Yuichi Egawa ,  Yoshiyuki Kaneko

IPC分类号： H01L27/06 ,  H01L29/78

CPC分类号： H01L21/823892 ,  H01L27/092

摘要： A technique which can improve manufacturing yield and product reliability is provided in a semiconductor device having a triple well structure. An inverter circuit which includes an n-channel type field effect transistor formed in a shallow p-type well and a p-channel type field effect transistor formed in a shallow n-type well, and does not contribute to circuit operations is provided in a deep n-type well formed in a p-type substrate; the shallow p-type well is connected to the substrate using a wiring of a first layer; and the gate electrode of the p-channel type field effect transistor and the gate electrode of the n-channel type field effect transistor are connected to the shallow n-type well using a wiring of an uppermost layer.

摘要翻译： 在具有三重阱结构的半导体器件中提供了可以提高制造成品率和产品可靠性的技术。 形成在浅p型阱中的n沟道型场效应晶体管和形成在浅n型阱中的p沟道型场效应晶体管并且对电路操作无贡献的逆变器电路设置在 在p型衬底中形成深n型阱; 使用第一层的布线将浅的p型阱连接到基板; 并且p沟道型场效应晶体管的栅电极和n沟道型场效应晶体管的栅电极使用最上层的布线连接到浅n型阱。