Magnetoresistive head, with second magnetic domain control layers and manufacturing method thereof
    3.
    发明授权
    Magnetoresistive head, with second magnetic domain control layers and manufacturing method thereof 失效
    具有第二磁畴控制层的磁阻头及其制造方法

    公开(公告)号:US07468870B2

    公开(公告)日:2008-12-23

    申请号:US11317881

    申请日:2005-12-22

    IPC分类号: G11B5/39

    摘要: Making thinner the magnetic domain control layer deteriorates the magnetic properties. Also, disturbances tend to increase the magnetization dispersion of the magnetic domain control layer, thereby lowering the magnetic domain control bias magnetic field. In one embodiment of the invention, a first magnetic domain control layer is provided in the proximity of the free layer of the GMR sensor in such a way that the track width is Twr1. Outside the first magnetic domain control layer is provided a second magnetic domain control layer. The second magnetic domain control layer placed outside the first magnetic domain control layer gives the first magnetic domain control layer an external bias field. The amount of magnetization of the tip of the first magnetic domain control layer is polarized and increased by the bias magnetic field from the second magnetic domain control layer. This causes the first magnetic domain control layer to apply a strong bias magnetic field having a lower dispersion to the free layer of the GMR sensor.

    摘要翻译: 使磁畴控制层变薄使磁特性恶化。 此外,扰动倾向于增加磁畴控制层的磁化散度,从而降低磁畴控制偏置磁场。 在本发明的一个实施例中,第一磁畴控制层设置在GMR传感器的自由层附近,使得轨道宽度为Twr1。 在第一磁畴控制层之外设置有第二磁畴控制层。 放置在第一磁畴控制层之外的第二磁畴控制层给予第一磁畴控制层外部偏置场。 第一磁畴控制层的尖端的磁化量被来自第二磁畴控制层的偏置磁场极化并增加。 这使得第一磁畴控制层向GMR传感器的自由层施加具有较低色散的强偏磁场。

    Magnetoresistive head, manufacturing method thereof, and read write separation type head
    5.
    发明申请
    Magnetoresistive head, manufacturing method thereof, and read write separation type head 失效
    磁阻头,其制造方法和读写分离型头

    公开(公告)号:US20060158793A1

    公开(公告)日:2006-07-20

    申请号:US11317881

    申请日:2005-12-22

    IPC分类号: G11B5/127 G11B5/33

    摘要: Making thinner the magnetic domain control layer deteriorates the magnetic properties. Also, disturbances tend to increase the magnetization dispersion of the magnetic domain control layer, thereby lowering the magnetic domain control bias magnetic field. In one embodiment of the invention, a first magnetic domain control layer is provided in the proximity of the free layer of the GMR sensor in such a way that the track width is Twr1. Outside the first magnetic domain control layer is provided a second magnetic domain control layer. The second magnetic domain control layer placed outside the first magnetic domain control layer gives the first magnetic domain control layer an external bias field. The amount of magnetization of the tip of the first magnetic domain control layer is polarized and increased by the bias magnetic field from the second magnetic domain control layer. This causes the first magnetic domain control layer to apply a strong bias magnetic field having a lower dispersion to the free layer of the GMR sensor.

    摘要翻译: 使磁畴控制层变薄使磁特性恶化。 此外,扰动倾向于增加磁畴控制层的磁化散度,从而降低磁畴控制偏置磁场。 在本发明的一个实施例中,第一磁畴控制层设置在GMR传感器的自由层附近,使得轨道宽度为Twr1。 在第一磁畴控制层之外设置有第二磁畴控制层。 放置在第一磁畴控制层之外的第二磁畴控制层给予第一磁畴控制层外部偏置场。 第一磁畴控制层的尖端的磁化量被来自第二磁畴控制层的偏置磁场极化并增加。 这使得第一磁畴控制层向GMR传感器的自由层施加具有较低色散的强偏磁场。

    Magnetoresistive head and fabricating method thereof, and read write separation type head
    7.
    发明申请
    Magnetoresistive head and fabricating method thereof, and read write separation type head 有权
    磁阻头及其制造方法,以及读写分离型头

    公开(公告)号:US20060056112A1

    公开(公告)日:2006-03-16

    申请号:US11227906

    申请日:2005-09-14

    IPC分类号: G11B5/33 G11B5/127

    摘要: Making a geometric track width small does not decrease a read track width, resulting only in an output being reduced. In one embodiment, a seed layer, an underlayer, and a magnetic domain control layer are laminated on both sides of a magnetoresistive sheet unit. A lower electrode film is thinly formed on an upper portion of the magnetic domain control film. A portion of the lower electrode film near the magnetoresistive sheet unit does not protrude substantially from an upper surface of the magnetoresistive sheet unit. Should the portion protrude, a step from the upper surface of the magnetoresistive sheet unit is about 14 nm or less. This portion and the upper surface of the magnetoresistive sheet unit are formed into a flat surface. An upper electrode film is formed thickly on an upper portion of the lower electrode film on an outside thereof so as to circumvent the flat surface. A protective layer, an upper gap film, and an upper magnetic shield film are also formed.

    摘要翻译: 使几何轨道宽度较小不会减小读取磁道宽度,从而仅减少输出。 在一个实施例中,种子层,底层和磁畴控制层层叠在磁阻片单元的两侧。 在磁畴控制膜的上部薄薄地形成下电极膜。 磁阻片单元附近的下电极膜的一部分基本上不从磁阻片单元的上表面凸出。 如果该部分突出,则从磁阻片单元的上表面开始的步长约为14nm或更小。 磁阻片单元的该部分和上表面形成为平坦表面。 在下部电极膜的上部的外侧厚度形成上部电极膜,以便绕着平坦表面。 还形成保护层,上间隙膜和上磁屏蔽膜。

    Spin-valve giant magnetoresistive head and method of manufacturing the same
    8.
    发明授权
    Spin-valve giant magnetoresistive head and method of manufacturing the same 失效
    旋转阀巨磁阻头及其制造方法

    公开(公告)号:US06717778B2

    公开(公告)日:2004-04-06

    申请号:US09931255

    申请日:2001-08-17

    IPC分类号: G11B539

    摘要: Multiple thin films of spin-valve GMR sensor are formed in a trapezoidal cross-sectional shape by laminating an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer and a nonmagnetic protective layer on a lower insulated gap layer. The amount of etching of the lower insulated gap layer produced in the process of patterning the spin-valve giant magnetoresistive layers into the multiple thin films of spin-valve GMR sensor is 10 nm or less. Further, the angle &thgr; which the tangent line of each side face of the multiple thin films to the middle line of the free magnetic layer in its thickness direction forms with respect to the middle line of the free magnetic layer becomes 45 degrees or more. This structure makes it possible to provide such a spin-valve giant magnetoresistive head that it meets the requirements for securing constant breakdown voltage and preventing instability of MR output voltage waveform.

    摘要翻译: 通过在下绝缘间隙层上层叠反铁磁层,钉扎磁性层,非磁性导电层,自由磁性层和非磁性保护层,形成梯形截面形状的多个自旋阀GMR传感器薄膜。 在将自旋阀巨磁阻层图案化成自旋阀GMR传感器的多个薄膜的过程中产生的下绝缘间隙层的蚀刻量为10nm以下。 此外,相对于自由磁性层的中间线,多个薄膜的每个侧面的切线与自由磁性层的中间线在其厚度方向上形成的角度θ成为45度以上。 这种结构使得可以提供这样的自旋阀巨磁阻头,其满足确保恒定击穿电压的要求并防止MR输出电压波形的不稳定性。

    Magnetoresistive head and fabricating method thereof, and read write separation type head
    9.
    发明授权
    Magnetoresistive head and fabricating method thereof, and read write separation type head 有权
    磁阻头及其制造方法,以及读写分离型头

    公开(公告)号:US07675715B2

    公开(公告)日:2010-03-09

    申请号:US11227906

    申请日:2005-09-14

    IPC分类号: G11B5/33 G11B5/127

    摘要: In one embodiment, a seed layer, an underlayer, and a magnetic domain control layer are laminated on both sides of a magnetoresistive sheet unit. A lower electrode film is thinly formed on an upper portion of the magnetic domain control film. A portion of the lower electrode film near the magnetoresistive sheet unit does not protrude substantially from an upper surface of the magnetoresistive sheet unit. Should the portion protrude, a step from the upper surface of the magnetoresistive sheet unit is about 14 nm or less. This portion and the upper surface of the magnetoresistive sheet unit are formed into a flat surface. An upper electrode film is formed thickly on an upper portion of the lower electrode film on an outside thereof so as to circumvent the flat surface. A protective layer, an upper gap film, and an upper magnetic shield film are also formed.

    摘要翻译: 在一个实施例中,种子层,底层和磁畴控制层层叠在磁阻片单元的两侧。 在磁畴控制膜的上部薄薄地形成下电极膜。 磁阻片单元附近的下电极膜的一部分基本上不从磁阻片单元的上表面凸出。 如果该部分突出,则从磁阻片单元的上表面开始的步长约为14nm或更小。 磁阻片单元的该部分和上表面形成为平坦表面。 在下部电极膜的上部的外侧厚度形成上部电极膜,以便绕着平坦表面。 还形成保护层,上间隙膜和上磁屏蔽膜。