公开(公告)号：US20070015366A1

公开(公告)日：2007-01-18

申请号：US11480207

申请日：2006-06-29

申请人： Takayuki Enda ,  Masayuki Moriya

发明人： Takayuki Enda ,  Masayuki Moriya

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/31053 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/32139 ,  H01L21/76224

摘要： The present invention provides a method of fabricating a semiconductor device including forming stop layers (32) that include silicon oxy-nitride films above a semiconductor substrate, forming a cover film (34) between and on the stop layers, in which a top surface of the cover film above a region between the stop layers is higher than top surfaces of the stop layers, and polishing the cover film to the stop layers by using ceria slurry, and also provides a semiconductor device including metal layers (30) provided above a semiconductor substrate, silicon oxy-nitride films (32) provided on the metal layers, and an embedded layer (36) provided between the metal layers to have a top surface substantially coplanar with top surfaces of the silicon oxy-nitride films. According to the present invention, it is possible to provide a semiconductor device having a film of excellent planarization on a surface thereof and fabrication method therefor.

摘要翻译： 本发明提供一种制造半导体器件的方法，包括：形成在半导体衬底上方包含硅氮化物膜的阻挡层（32），在阻挡层之间和之间形成覆盖膜（34），其中顶表面 在止挡层之间的区域之上的覆盖膜高于止挡层的顶表面，并且通过使用二氧化铈浆料将盖膜抛光到止挡层，并且还提供包括设置在半导体上方的金属层（30）的半导体器件 衬底，设置在金属层上的硅氮化物膜（32）以及设置在金属层之间的嵌入层（36），以使顶表面与氮氧化硅膜的顶表面基本上共面。 根据本发明，可以提供一种在其表面上具有优异平坦化膜的半导体器件及其制造方法。

公开(公告)号：US20120248597A1

公开(公告)日：2012-10-04

申请号：US13523568

申请日：2012-06-14

申请人： Takayuki ENDA ,  Masayuki MORIYA

发明人： Takayuki ENDA ,  Masayuki MORIYA

IPC分类号： H01L23/48 ,  H01L21/28

CPC分类号： H01L21/31053 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/32139 ,  H01L21/76224

摘要： The present invention provides a method of fabricating a semiconductor device including forming stop layers (32) that include silicon oxy-nitride films above a semiconductor substrate, forming a cover film (34) between and on the stop layers, in which a top surface of the cover film above a region between the stop layers is higher than top surfaces of the stop layers, and polishing the cover film to the stop layers by using ceria slurry, and also provides a semiconductor device including metal layers (30) provided above a semiconductor substrate, silicon oxy-nitride films (32) provided on the metal layers, and an embedded layer (36) provided between the metal layers to have a top surface substantially coplanar with top surfaces of the silicon oxy-nitride films. According to the present invention, it is possible to provide a semiconductor device having a film of excellent planarization on a surface thereof and fabrication method therefor.

摘要翻译： 本发明提供一种制造半导体器件的方法，包括：形成在半导体衬底上方包含硅氮化物膜的阻挡层（32），在阻挡层之间和之间形成覆盖膜（34），其中顶表面 在止挡层之间的区域之上的覆盖膜高于止挡层的顶表面，并且通过使用二氧化铈浆料将盖膜抛光到止挡层，并且还提供包括设置在半导体上方的金属层（30）的半导体器件 衬底，设置在金属层上的硅氮化物膜（32）以及设置在金属层之间的嵌入层（36），以使顶表面与氮氧化硅膜的顶表面基本上共面。 根据本发明，可以提供一种在其表面上具有优异平坦化膜的半导体器件及其制造方法。

公开(公告)号：US09396959B2

公开(公告)日：2016-07-19

申请号：US13523568

申请日：2012-06-14

申请人： Takayuki Enda ,  Masayuki Moriya

发明人： Takayuki Enda ,  Masayuki Moriya

IPC分类号： H01L21/3105 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/762

CPC分类号： H01L21/31053 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/32139 ,  H01L21/76224

摘要： The present invention provides a method of fabricating a semiconductor device including forming stop layers (32) that include silicon oxy-nitride films above a semiconductor substrate, forming a cover film (34) between and on the stop layers, in which a top surface of the cover film above a region between the stop layers is higher than top surfaces of the stop layers, and polishing the cover film to the stop layers by using ceria slurry, and also provides a semiconductor device including metal layers (30) provided above a semiconductor substrate, silicon oxy-nitride films (32) provided on the metal layers, and an embedded layer (36) provided between the metal layers to have a top surface substantially coplanar with top surfaces of the silicon oxy-nitride films. According to the present invention, it is possible to provide a semiconductor device having a film of excellent planarization on a surface thereof and fabrication method therefor.

摘要翻译： 本发明提供一种制造半导体器件的方法，包括：形成在半导体衬底上方包含硅氮化物膜的阻挡层（32），在阻挡层之间和之间形成覆盖膜（34），其中顶表面 在止挡层之间的区域之上的覆盖膜高于止挡层的顶表面，并且通过使用二氧化铈浆料将盖膜抛光到止挡层，并且还提供包括设置在半导体上方的金属层（30）的半导体器件 衬底，设置在金属层上的硅氮化物膜（32）以及设置在金属层之间的嵌入层（36），以使顶表面与氮氧化硅膜的顶表面基本上共面。 根据本发明，可以提供一种在其表面上具有优异平坦化膜的半导体器件及其制造方法。

公开(公告)号：US08222147B2

公开(公告)日：2012-07-17

申请号：US11480207

申请日：2006-06-29

申请人： Takayuki Enda ,  Masayuki Moriya

发明人： Takayuki Enda ,  Masayuki Moriya

IPC分类号： H01L21/311

CPC分类号： H01L21/31053 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/32139 ,  H01L21/76224

摘要： The present invention provides a method of fabricating a semiconductor device including forming stop layers (32) that include silicon oxy-nitride films above a semiconductor substrate, forming a cover film (34) between and on the stop layers, in which a top surface of the cover film above a region between the stop layers is higher than top surfaces of the stop layers, and polishing the cover film to the stop layers by using ceria slurry, and also provides a semiconductor device including metal layers (30) provided above a semiconductor substrate, silicon oxy-nitride films (32) provided on the metal layers, and an embedded layer (36) provided between the metal layers to have a top surface substantially coplanar with top surfaces of the silicon oxy-nitride films. According to the present invention, it is possible to provide a semiconductor device having a film of excellent planarization on a surface thereof and fabrication method therefor.

摘要翻译： 本发明提供一种制造半导体器件的方法，包括：形成在半导体衬底上方包含硅氮化物膜的阻挡层（32），在阻挡层之间和之间形成覆盖膜（34），其中顶表面 在止挡层之间的区域之上的覆盖膜高于止挡层的顶表面，并且通过使用二氧化铈浆料将盖膜抛光到止挡层，并且还提供包括设置在半导体上方的金属层（30）的半导体器件 衬底，设置在金属层上的硅氮化物膜（32）以及设置在金属层之间的嵌入层（36），以使顶表面与氮氧化硅膜的顶表面基本上共面。 根据本发明，可以提供一种在其表面上具有优异平坦化膜的半导体器件及其制造方法。

公开(公告)号：USD265296S

公开(公告)日：1982-07-06

申请号：US147270

申请日：1980-05-06

申请人： Hiroshi Wanibuchi ,  Masayuki Moriya ,  Yoshiro Yanagi

设计人： Hiroshi Wanibuchi ,  Masayuki Moriya ,  Yoshiro Yanagi