Band gap tuning in transition metal oxides by site-specific substitution
    1.
    发明授权
    Band gap tuning in transition metal oxides by site-specific substitution 有权
    通过位点特异性取代在过渡金属氧化物中的带隙调整

    公开(公告)号:US08613798B2

    公开(公告)日:2013-12-24

    申请号:US13401100

    申请日:2012-02-21

    IPC分类号: C09D1/00

    摘要: A transition metal oxide insulator composition having a tuned band gap includes a transition metal oxide having a perovskite or a perovskite-like crystalline structure. The transition metal oxide includes at least one first element selected from the group of Bi, Ca, Ba, Sr, Li, Na, Mg, K, Pb, and Pr; and at least one second element selected from the group of Ti, Al, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Ru, Rh, Pd, Hf, Ta, W, Re, Os, Ir, and Pt. At least one correlated insulator is integrated into the crystalline structure, including REMO3, wherein RE is at least one Rare Earth element, and wherein M is at least one element selected from the group of Co, V, Cr, Ni, Mn, and Fe. The composition is characterized by a band gap of less than 4.5 eV.

    摘要翻译: 具有调谐带隙的过渡金属氧化物绝缘体组合物包括具有钙钛矿或钙钛矿结晶结构的过渡金属氧化物。 过渡金属氧化物包括选自Bi,Ca,Ba,Sr,Li,Na,Mg,K,Pb和Pr中的至少一种第一元素; 以及选自Ti,Al,V,Cr,Mn,Fe,Co,Ni,Cu,Zr,Nb,Mo,Ru,Rh,Pd,Hf,Ta,W,Re,Os组中的至少一种第二元素 ,Ir和Pt。 至少一个相关的绝缘子被集成到晶体结构中,包括REMO3,其中RE是至少一个稀土元素,其中M是选自Co,V,Cr,Ni,Mn和Fe中的至少一种元素 。 该组合物的特征在于小于4.5eV的带隙。