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    Band Gap Tuning in Transition Metal Oxides by Site-Specific Substitution
    3.
    发明申请
    Band Gap Tuning in Transition Metal Oxides by Site-Specific Substitution 有权
    通过场地特异性取代过渡金属氧化物的带隙调整

    公开(公告)号：US20130213263A1

    公开(公告)日：2013-08-22

    申请号：US13401100

    申请日：2012-02-21

    申请人： Ho Nyung Lee ,  Matthew F. Chisholm ,  Gerald Earle Jellison, JR. ,  David J. Singh ,  Woo Seok Choi

    发明人： Ho Nyung Lee ,  Matthew F. Chisholm ,  Gerald Earle Jellison, JR. ,  David J. Singh ,  Woo Seok Choi

    IPC分类号： C09D1/00

    CPC分类号： C23C14/28 ,  C23C14/08 ,  C30B23/02 ,  C30B29/22 ,  H01L21/02197 ,  H01L21/02266

    摘要： A transition metal oxide insulator composition having a tuned band gap includes a transition metal oxide having a perovskite or a perovskite-like crystalline structure. The transition metal oxide includes at least one first element selected from the group of Bi, Ca, Ba, Sr, Li, Na, Mg, K, Pb, and Pr; and at least one second element selected from the group of Ti, Al, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Ru, Rh, Pd, Hf, Ta, W, Re, Os, Ir, and Pt. At least one correlated insulator is integrated into the crystalline structure, including REMO3, wherein RE is at least one Rare Earth element, and wherein M is at least one element selected from the group of Co, V, Cr, Ni, Mn, and Fe. The composition is characterized by a band gap of less than 4.5 eV.

    摘要翻译： 具有调谐带隙的过渡金属氧化物绝缘体组合物包括具有钙钛矿或钙钛矿结晶结构的过渡金属氧化物。 过渡金属氧化物包括选自Bi，Ca，Ba，Sr，Li，Na，Mg，K，Pb和Pr中的至少一种第一元素; 以及选自Ti，Al，V，Cr，Mn，Fe，Co，Ni，Cu，Zr，Nb，Mo，Ru，Rh，Pd，Hf，Ta，W，Re，Os组中的至少一种第二元素 ，Ir和Pt。 至少一个相关的绝缘子被集成到晶体结构中，包括REMO3，其中RE是至少一个稀土元素，其中M是选自Co，V，Cr，Ni，Mn和Fe中的至少一种元素 。 该组合物的特征在于小于4.5eV的带隙。

    Ferroelectric tunneling element and memory applications which utilize the tunneling element
    4.
    发明授权
    Ferroelectric tunneling element and memory applications which utilize the tunneling element 失效
    铁电隧道元件和利用隧道元件的存储器应用

    公开(公告)号：US07759713B2

    公开(公告)日：2010-07-20

    申请号：US11368550

    申请日：2006-03-06

    申请人： Sergei V. Kalinin ,  Hans M. Christen ,  Arthur P. Baddorf ,  Vincent Meunier ,  Ho Nyung Lee

    发明人： Sergei V. Kalinin ,  Hans M. Christen ,  Arthur P. Baddorf ,  Vincent Meunier ,  Ho Nyung Lee

    IPC分类号： H01L31/62

    CPC分类号： H01L27/11502 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/1625

    摘要： A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

    摘要翻译： 隧道元件包括铁电材料的薄膜层和设置在铁电层的相对侧上的一对不同的导电层。 由于在导电层之间的组成或结构上的不相似性，当隧道元件低于铁电材料层的居里温度时，导电层的电子传输行为是偏振的。 该元件可用作紧凑1R型非易失性随机存取存储器（RAM）的基础。 其优点包括非常简单的架构，极限的可扩展性和所有铁电存储器的通用快速访问时间。

    Ultrahigh density ferroelectric storage and lithography by high order ferroic switching
    5.
    发明授权
    Ultrahigh density ferroelectric storage and lithography by high order ferroic switching 失效
    超高密度铁电存储和光刻通过高阶铁切换

    公开(公告)号：US07292768B1

    公开(公告)日：2007-11-06

    申请号：US11409740

    申请日：2006-04-24

    申请人： Sergei V. Kalinin ,  Arthur P. Baddorf ,  Ho Nyung Lee ,  Junsoo Shin ,  Alexei L. Gruverman ,  Edgar Karapetian ,  Mark Kachanov

    发明人： Sergei V. Kalinin ,  Arthur P. Baddorf ,  Ho Nyung Lee ,  Junsoo Shin ,  Alexei L. Gruverman ,  Edgar Karapetian ,  Mark Kachanov

    IPC分类号： G02B6/00 ,  G11B9/00

    CPC分类号： G11B9/02 ,  G11B11/002

    摘要： A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.

    摘要翻译： 在偏振方向垂直于材料表面的薄膜铁电材料中，在相对较小的畴内切换极化方向的方法包括将可电荷尖端移动到接触表面的步骤 铁电材料使得邻近尖端的区域中的极化方向相对于铁电体材料的表面沿预选方向取向。 然后将尖端压在铁电材料的表面上，使得铁电体材料在与尖端接触的区域内的极化方向在尖端的压缩影响和电偏压的组合作用下相反 。

    Band gap tuning in transition metal oxides by site-specific substitution
    6.
    发明授权
    Band gap tuning in transition metal oxides by site-specific substitution 有权
    通过位点特异性取代在过渡金属氧化物中的带隙调整

    公开(公告)号：US08613798B2

    公开(公告)日：2013-12-24

    申请号：US13401100

    申请日：2012-02-21

    申请人： Ho Nyung Lee ,  Matthew F. Chisholm, Jr. ,  Gerald Earle Jellison, Jr. ,  David J. Singh ,  Woo Seok Choi

    发明人： Ho Nyung Lee ,  Matthew F. Chisholm, Jr. ,  Gerald Earle Jellison, Jr. ,  David J. Singh ,  Woo Seok Choi

    IPC分类号： C09D1/00

    CPC分类号： C23C14/28 ,  C23C14/08 ,  C30B23/02 ,  C30B29/22 ,  H01L21/02197 ,  H01L21/02266

    摘要： A transition metal oxide insulator composition having a tuned band gap includes a transition metal oxide having a perovskite or a perovskite-like crystalline structure. The transition metal oxide includes at least one first element selected from the group of Bi, Ca, Ba, Sr, Li, Na, Mg, K, Pb, and Pr; and at least one second element selected from the group of Ti, Al, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Ru, Rh, Pd, Hf, Ta, W, Re, Os, Ir, and Pt. At least one correlated insulator is integrated into the crystalline structure, including REMO3, wherein RE is at least one Rare Earth element, and wherein M is at least one element selected from the group of Co, V, Cr, Ni, Mn, and Fe. The composition is characterized by a band gap of less than 4.5 eV.

    摘要翻译： 具有调谐带隙的过渡金属氧化物绝缘体组合物包括具有钙钛矿或钙钛矿结晶结构的过渡金属氧化物。 过渡金属氧化物包括选自Bi，Ca，Ba，Sr，Li，Na，Mg，K，Pb和Pr中的至少一种第一元素; 以及选自Ti，Al，V，Cr，Mn，Fe，Co，Ni，Cu，Zr，Nb，Mo，Ru，Rh，Pd，Hf，Ta，W，Re，Os组中的至少一种第二元素 ，Ir和Pt。 至少一个相关的绝缘子被集成到晶体结构中，包括REMO3，其中RE是至少一个稀土元素，其中M是选自Co，V，Cr，Ni，Mn和Fe中的至少一种元素 。 该组合物的特征在于小于4.5eV的带隙。