Apparatus and method for providing white board service in mobile communication system
    1.
    发明授权
    Apparatus and method for providing white board service in mobile communication system 有权
    在移动通信系统中提供白板服务的装置和方法

    公开(公告)号:US08331407B2

    公开(公告)日:2012-12-11

    申请号:US12756259

    申请日:2010-04-08

    申请人: Mi-Ra Choi

    发明人: Mi-Ra Choi

    IPC分类号: H04J3/02 G06F15/16

    摘要: An apparatus and a method for providing a white board service in a mobile communication system are provided, wherein a bit stream received from a counterpart node is demuxed into data of a logic channel and data of a control channel using a demuxing protocol. The demuxed data is decoded for output.

    摘要翻译: 提供了一种用于在移动通信系统中提供白板服务的装置和方法,其中从对方节点接收的比特流使用解复用协议解调为逻辑信道的数据和控制信道的数据。 解复用数据进行解码输出。

    PHASE CHANGE MEMORY DEVICE HAVING AN IMPROVED WORD LINE RESISTANCE, AND METHODS OF MAKING SAME
    2.
    发明申请
    PHASE CHANGE MEMORY DEVICE HAVING AN IMPROVED WORD LINE RESISTANCE, AND METHODS OF MAKING SAME 有权
    具有改进的字线电阻的相变存储器件及其制造方法

    公开(公告)号:US20100327249A1

    公开(公告)日:2010-12-30

    申请号:US12635950

    申请日:2009-12-11

    IPC分类号: H01L45/00 H01L29/18 H01L21/06

    摘要: A phase change memory device having an improved word line resistance and a fabrication method of making the same are presented. The phase change memory device includes a semiconductor substrate, a word line, an interlayer insulation film, a strapping line, a plurality of current paths, a switching element, and a phase change variable resistor. The word line is formed in a cell area of the semiconductor substrate. The interlayer insulation film formed on the word line. The strapping line is formed on the interlayer insulation film such that the strapping line overlaps on top of the word line. The current paths electrically connect together the word line with the strapping line. The switching element is electrically connected to the strapping line. The phase change variable resistor is electrically connected to the switching element.

    摘要翻译: 提出了具有改进的字线电阻的相变存储器件及其制造方法。 相变存储器件包括半导体衬底,字线,层间绝缘膜,捆扎线,多个电流路径,开关元件和相变可变电阻器。 字线形成在半导体衬底的单元区域中。 形成在字线上的层间绝缘膜。 捆扎线形成在层间绝缘膜上,使得捆扎线与字线的顶部重叠。 电流路径将字线与捆扎线电连接在一起。 开关元件电连接到捆扎线。 相变可变电阻器电连接到开关元件。

    Phase change memory device having an improved word line resistance, and methods of making same
    3.
    发明授权
    Phase change memory device having an improved word line resistance, and methods of making same 有权
    具有改善的字线电阻的相变存储器件及其制造方法

    公开(公告)号:US08415197B2

    公开(公告)日:2013-04-09

    申请号:US13605167

    申请日:2012-09-06

    IPC分类号: H01L47/00 H01L29/02 H01L21/06

    摘要: A phase change memory device having an improved word line resistance and a fabrication method of making the same are presented. The phase change memory device includes a semiconductor substrate, a word line, an interlayer insulation film, a strapping line, a plurality of current paths, a switching element, and a phase change variable resistor. The word line is formed in a cell area of the semiconductor substrate. The interlayer insulation film formed on the word line. The strapping line is formed on the interlayer insulation film such that the strapping line overlaps on top of the word line. The current paths electrically connect together the word line with the strapping line. The switching element is electrically connected to the strapping line. The phase change variable resistor is electrically connected to the switching element.

    摘要翻译: 提出了具有改进的字线电阻的相变存储器件及其制造方法。 相变存储器件包括半导体衬底,字线,层间绝缘膜,捆扎线,多个电流路径,开关元件和相变可变电阻器。 字线形成在半导体衬底的单元区域中。 形成在字线上的层间绝缘膜。 捆扎线形成在层间绝缘膜上,使得捆扎线与字线的顶部重叠。 电流路径将字线与捆扎线电连接在一起。 开关元件电连接到捆扎线。 相变可变电阻器电连接到开关元件。

    PHASE CHANGE MEMORY DEVICE HAVING AN IMPROVED WORD LINE RESISTANCE, AND METHODS OF MAKING SAME
    4.
    发明申请
    PHASE CHANGE MEMORY DEVICE HAVING AN IMPROVED WORD LINE RESISTANCE, AND METHODS OF MAKING SAME 有权
    具有改进的字线电阻的相变存储器件及其制造方法

    公开(公告)号:US20120329222A1

    公开(公告)日:2012-12-27

    申请号:US13605167

    申请日:2012-09-06

    IPC分类号: H01L21/8239

    摘要: A phase change memory device having an improved word line resistance and a fabrication method of making the same are presented. The phase change memory device includes a semiconductor substrate, a word line, an interlayer insulation film, a strapping line, a plurality of current paths, a switching element, and a phase change variable resistor. The word line is formed in a cell area of the semiconductor substrate. The interlayer insulation film formed on the word line. The strapping line is formed on the interlayer insulation film such that the strapping line overlaps on top of the word line. The current paths electrically connect together the word line with the strapping line. The switching element is electrically connected to the strapping line. The phase change variable resistor is electrically connected to the switching element.

    摘要翻译: 提出了具有改进的字线电阻的相变存储器件及其制造方法。 相变存储器件包括半导体衬底,字线,层间绝缘膜,捆扎线,多个电流路径,开关元件和相变可变电阻器。 字线形成在半导体衬底的单元区域中。 形成在字线上的层间绝缘膜。 捆扎线形成在层间绝缘膜上,使得捆扎线与字线的顶部重叠。 电流路径将字线与捆扎线电连接在一起。 开关元件电连接到捆扎线。 相变可变电阻器电连接到开关元件。

    Phase change memory device having an improved word line resistance, and methods of making same
    5.
    发明授权
    Phase change memory device having an improved word line resistance, and methods of making same 有权
    具有改善的字线电阻的相变存储器件及其制造方法

    公开(公告)号:US08283651B2

    公开(公告)日:2012-10-09

    申请号:US12635950

    申请日:2009-12-11

    IPC分类号: H01L47/00 H01L29/02

    摘要: A phase change memory device having an improved word line resistance and a fabrication method of making the same are presented. The phase change memory device includes a semiconductor substrate, a word line, an interlayer insulation film, a strapping line, a plurality of current paths, a switching element, and a phase change variable resistor. The word line is formed in a cell area of the semiconductor substrate. The interlayer insulation film formed on the word line. The strapping line is formed on the interlayer insulation film such that the strapping line overlaps on top of the word line. The current paths electrically connect together the word line with the strapping line. The switching element is electrically connected to the strapping line. The phase change variable resistor is electrically connected to the switching element.

    摘要翻译: 提出了具有改进的字线电阻的相变存储器件及其制造方法。 相变存储器件包括半导体衬底,字线,层间绝缘膜,捆扎线,多个电流路径,开关元件和相变可变电阻器。 字线形成在半导体衬底的单元区域中。 形成在字线上的层间绝缘膜。 捆扎线形成在层间绝缘膜上,使得捆扎线与字线的顶部重叠。 电流路径将字线与捆扎线电连接在一起。 开关元件电连接到捆扎线。 相变可变电阻器电连接到开关元件。

    APPARATUS AND METHOD FOR PROVIDING WHITE BOARD SERVICE IN MOBILE COMMUNICATION SYSTEM
    6.
    发明申请
    APPARATUS AND METHOD FOR PROVIDING WHITE BOARD SERVICE IN MOBILE COMMUNICATION SYSTEM 有权
    移动通信系统中提供白板服务的设备和方法

    公开(公告)号:US20100260209A1

    公开(公告)日:2010-10-14

    申请号:US12756259

    申请日:2010-04-08

    申请人: Mi-Ra CHOI

    发明人: Mi-Ra CHOI

    IPC分类号: H04J3/02 H04N7/14

    摘要: An apparatus and a method for providing a white board service in a mobile communication system are provided, wherein a bit stream received from a counterpart node is demuxed into data of a logic channel and data of a control channel using a demuxing protocol. The demuxed data is decoded for output.

    摘要翻译: 提供了一种用于在移动通信系统中提供白板服务的装置和方法,其中从对方节点接收的比特流使用解复用协议解调为逻辑信道的数据和控制信道的数据。 解复用数据进行解码输出。