摘要:
A translator circuit translates a memory access conforming to a native FB-DIMM (Fully Buffered Dual In-Line Memory Module) protocol to a memory access for addressing more than two ranks of parallel memory devices. The parallel memory devices are distributed among plural non-fully-buffered DIMMs (Dual In-Line Memory Modules).
摘要:
Memory devices and systems include a voltage sense line for addressing voltage tolerances across variable loadings. The memory devices and systems comprise a memory module connector with a first plurality of pins coupled to circuitry on a memory module, and a second plurality of pins coupled to power rails on the memory module that enable monitoring of the power rails from external to the memory module.
摘要:
A modular DIMM carrier and riser slot device includes a slot section having a slot configured to hold a plurality of memory device planars, a first latch disposed at a first end of the slot section and pivotably connected to the slot section and capable of securing a first end of the memory device planars; a second latch disposed at a second end of the slot section and pivotably connected to the slot section and capable of securing a second end of a first memory device planar, and a third latch pivotably connected to the slot section and disposed intermediate between the first and the second latches, the third latch capable of securing a second end of a second memory device planar. The slot section has an auxiliary slot section defined as an section between the second latch and the third latch. The auxiliary slot section includes a notch for receiving the third latch when the third latch is in a disengaged position, a retention notch that restrains movement of the third latch when the third latch is in an engaged position, and a power and signaling section that includes power and signaling connections usable by one or more of the memory device planars.
摘要:
Memory devices and systems include a voltage sense line for addressing voltage tolerances across variable loadings. The memory devices and systems comprise a memory module connector with a first plurality of pins coupled to circuitry on a memory module, and a second plurality of pins coupled to power rails on the memory module that enable monitoring of the power rails from external to the memory module.
摘要:
A modular DIMM carrier and riser slot device includes a slot section having a slot configured to hold a plurality of memory device planars, a first latch disposed at a first end of the slot section and pivotably connected to the slot section and capable of securing a first end of the memory device planars; a second latch disposed at a second end of the slot section and pivotably connected to the slot section and capable of securing a second end of a first memory device planar, and a third latch pivotably connected to the slot section and disposed intermediate between the first and the second latches, the third latch capable of securing a second end of a second memory device planar. The slot section has an auxiliary slot section defined as an section between the second latch and the third latch. The auxiliary slot section includes a notch for receiving the third latch when the third latch is in a disengaged position, a retention notch that restrains movement of the third latch when the third latch is in an engaged position, and a power and signaling section that includes power and signaling connections usable by one or more of the memory device planars.
摘要:
Memory devices and systems incorporate on-die termination for signal lines. A memory device comprises an integrated circuit die. The integrated circuit die comprises a pair of input signal pins that supply a pair of input signals, and an on-die termination circuit coupled between the pair of input signal pins that differentially terminates the pair of input signals.
摘要:
A translator circuit translates a memory access conforming to a native FB-DIMM (Fully Buffered Dual In-Line Memory Module) protocol to a memory access for addressing more than two ranks of parallel memory devices. The parallel memory devices are distributed among plural non-fully-buffered DIMMs (Dual In-Line Memory Modules).
摘要:
A memory apparatus enable operation which is adapted to environmental conditions. The memory apparatus includes a memory module that can store and incorporate environment-dependent optimal operating parameters. The memory module comprises a plurality of volatile memory devices and one or more non-volatile memory devices that store a plurality of environment-dependent device parameters for a device selected from the plurality of volatile memory devices. The stored parameters enable the selected device to function optimally in multiple environmental conditions.
摘要:
A translator of an apparatus in an example selects one or more ranks of parallel memory devices from a plurality of available ranks of parallel memory devices in a plurality of double data rate registered and/or unbuffered dual in-line memory modules (DDR registered and/or unbuffered DIMMs) through employment of a native fully buffered dual in-line memory module protocol (native FB-DIMM protocol).
摘要:
A translator of an apparatus in an example communicatively interconnects a serial protocol bus that follows a native fully buffered dual in-line memory module protocol (native FB-DIMM protocol) and three or more parallel protocol memory module channels that comprise a plurality of double data rate registered and/or unbuffered dual in-line memory modules (DDR registered and/or unbuffered DIMMs).