Memory module including voltage sense monitoring interface
    2.
    发明授权
    Memory module including voltage sense monitoring interface 有权
    内存模块包括电压检测监控界面

    公开(公告)号:US08018753B2

    公开(公告)日:2011-09-13

    申请号:US12262038

    申请日:2008-10-30

    IPC分类号: G11C5/06

    摘要: Memory devices and systems include a voltage sense line for addressing voltage tolerances across variable loadings. The memory devices and systems comprise a memory module connector with a first plurality of pins coupled to circuitry on a memory module, and a second plurality of pins coupled to power rails on the memory module that enable monitoring of the power rails from external to the memory module.

    摘要翻译: 存储器件和系统包括用于解决跨可变负载的电压容差的电压检测线。 存储器设备和系统包括存储器模块连接器,其具有耦合到存储器模块上的电路的第一多个引脚,以及耦合到存储器模块上的电源轨的第二多个引脚,其能够从外部监视到存储器 模块。

    Modular DIMM carrier and riser slot
    3.
    发明授权
    Modular DIMM carrier and riser slot 失效
    模块化DIMM载体和提升槽

    公开(公告)号:US07729126B2

    公开(公告)日:2010-06-01

    申请号:US11882263

    申请日:2007-07-31

    IPC分类号: H05K7/18

    CPC分类号: H01R12/82 H01R27/00

    摘要: A modular DIMM carrier and riser slot device includes a slot section having a slot configured to hold a plurality of memory device planars, a first latch disposed at a first end of the slot section and pivotably connected to the slot section and capable of securing a first end of the memory device planars; a second latch disposed at a second end of the slot section and pivotably connected to the slot section and capable of securing a second end of a first memory device planar, and a third latch pivotably connected to the slot section and disposed intermediate between the first and the second latches, the third latch capable of securing a second end of a second memory device planar. The slot section has an auxiliary slot section defined as an section between the second latch and the third latch. The auxiliary slot section includes a notch for receiving the third latch when the third latch is in a disengaged position, a retention notch that restrains movement of the third latch when the third latch is in an engaged position, and a power and signaling section that includes power and signaling connections usable by one or more of the memory device planars.

    摘要翻译: 模块化的DIMM载体和提升槽设备包括具有配置成保持多个存储器设备平面的槽的槽部分,第一闩锁,其设置在槽部分的第一端处并且可枢转地连接到槽部分并且能够固定第一 内存设备平面结束; 第二闩锁,其设置在所述狭槽部分的第二端处并且可枢转地连接到所述狭槽部分并且能够固定第一存储装置平面的第二端,以及第三闩锁,其可枢转地连接到所述狭槽部分并且设置在所述第一和第 第二锁存器,第三锁存器能够固定第二存储器件平面的第二端。 狭缝部分具有限定为第二闩锁和第三闩锁之间的部分的辅助狭缝部分。 所述辅助槽部包括用于当所述第三闩锁处于分离位置时接收所述第三闩锁的凹口,当所述第三闩锁处于接合位置时限制所述第三闩锁的移动的保持凹口,以及包括 功率和信令连接可由一个或多个存储器设备平面使用。

    Modular DIMM carrier and riser slot
    5.
    发明申请
    Modular DIMM carrier and riser slot 失效
    模块化DIMM载体和提升槽

    公开(公告)号:US20090035978A1

    公开(公告)日:2009-02-05

    申请号:US11882263

    申请日:2007-07-31

    IPC分类号: H01R13/62

    CPC分类号: H01R12/82 H01R27/00

    摘要: A modular DIMM carrier and riser slot device includes a slot section having a slot configured to hold a plurality of memory device planars, a first latch disposed at a first end of the slot section and pivotably connected to the slot section and capable of securing a first end of the memory device planars; a second latch disposed at a second end of the slot section and pivotably connected to the slot section and capable of securing a second end of a first memory device planar, and a third latch pivotably connected to the slot section and disposed intermediate between the first and the second latches, the third latch capable of securing a second end of a second memory device planar. The slot section has an auxiliary slot section defined as an section between the second latch and the third latch. The auxiliary slot section includes a notch for receiving the third latch when the third latch is in a disengaged position, a retention notch that restrains movement of the third latch when the third latch is in an engaged position, and a power and signaling section that includes power and signaling connections usable by one or more of the memory device planars.

    摘要翻译: 模块化的DIMM载体和提升槽设备包括具有配置成保持多个存储器设备平面的槽的槽部分,第一闩锁,其设置在槽部分的第一端处并且可枢转地连接到槽部分并且能够固定第一 内存设备平面结束; 第二闩锁,其设置在所述狭槽部分的第二端处并且可枢转地连接到所述狭槽部分并且能够固定第一存储装置平面的第二端,以及第三闩锁,其可枢转地连接到所述狭槽部分并且设置在所述第一和第 第二锁存器,第三锁存器能够固定第二存储器件平面的第二端。 狭缝部分具有限定为第二闩锁和第三闩锁之间的部分的辅助狭缝部分。 所述辅助槽部包括用于当所述第三闩锁处于分离位置时接收所述第三闩锁的凹口,当所述第三闩锁处于接合位置时限制所述第三闩锁的移动的保持凹口,以及包括 功率和信令连接可由一个或多个存储器设备平面使用。

    Memory module including environmental optimization
    8.
    发明授权
    Memory module including environmental optimization 有权
    内存模块包括环境优化

    公开(公告)号:US08225031B2

    公开(公告)日:2012-07-17

    申请号:US12262063

    申请日:2008-10-30

    IPC分类号: G06F11/30

    摘要: A memory apparatus enable operation which is adapted to environmental conditions. The memory apparatus includes a memory module that can store and incorporate environment-dependent optimal operating parameters. The memory module comprises a plurality of volatile memory devices and one or more non-volatile memory devices that store a plurality of environment-dependent device parameters for a device selected from the plurality of volatile memory devices. The stored parameters enable the selected device to function optimally in multiple environmental conditions.

    摘要翻译: 一种适应于环境条件的存储装置使能操作。 该存储装置包括一个存储器模块,该存储器模块可以存储和结合环境相关的最佳操作参数。 存储器模块包括多个易失性存储器设备和一个或多个非易失性存储器设备,其存储用于从多个易失性存储器设备中选择的设备的多个环境相关设备参数。 存储的参数使所选设备能够在多种环境条件下最佳地运行。

    Parallel memory device rank selection
    9.
    发明授权
    Parallel memory device rank selection 有权
    并行存储设备等级选择

    公开(公告)号:US07996602B1

    公开(公告)日:2011-08-09

    申请号:US11796903

    申请日:2007-04-30

    IPC分类号: G06F12/06

    CPC分类号: G11C5/04

    摘要: A translator of an apparatus in an example selects one or more ranks of parallel memory devices from a plurality of available ranks of parallel memory devices in a plurality of double data rate registered and/or unbuffered dual in-line memory modules (DDR registered and/or unbuffered DIMMs) through employment of a native fully buffered dual in-line memory module protocol (native FB-DIMM protocol).

    摘要翻译: 示例中的设备的翻译器从多个双数据速率注册和/或非缓冲双列直插存储器模块中的多个可用并行存储器设备级别中选择一个或多个并行存储器设备(DDR注册和/ 或非缓冲DIMM),通过使用本机完全缓冲双列直插式内存模块协议(本机FB-DIMM协议)。