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1.发明申请STEPPER SYSTEM FOR ULTRA-HIGH RESOLUTION PHOTOLITHOGRAPHY USING PHOTOLITHOGRAPHIC MASK EXHIBITING ENHANCED LIGHT TRANSMISSION DUE TO UTILIZING SUB-WAVELENGTH APERTURE ARRAYS 有权使用光刻胶幕进行超高分辨率光刻技术的步进系统展示增强型光传输由于使用子波长光栅阵列公开(公告)号：US20090201475A1
公开(公告)日：2009-08-13
申请号：US12114409
申请日：2008-05-02
申请人： MARTIN C. PECKERAR , MARIO DAGENAIS , BIRENDRA DUTT , JOHN D. BARRY , MICHAEL D. MESSINA, JR. , YVES NGU
发明人： MARTIN C. PECKERAR , MARIO DAGENAIS , BIRENDRA DUTT , JOHN D. BARRY , MICHAEL D. MESSINA, JR. , YVES NGU
CPC分类号： G03F7/70433 , G03F1/50 , G03F1/54
摘要： A stepper system for ultra-high resolution nano-lithography employs a photolithographic mask which includes a layer of an electrically conductive optically opaque material in which periodic arrays of sub-wavelength apertures are formed. The plasmonic excitation in the photolithographic mask exposed to the light of the wavelength in the range of 197 nm-248 nm, produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer. The stepper system demonstrates the resiliency to the mask defects and ability to imprint coherent clear features of nano dimensions (45 nm-500 nm) and various shapes on the wafers for integrated circuits design. The stepper system may be adjusted to image the plane of the highest plasmonic field exiting the mask.
摘要翻译： 用于超高分辨率纳米光刻的步进系统采用光刻掩模，其包括其中形成有周期性的亚波长孔径阵列的导电光学不透明材料层。 暴露于波长在197nm-248nm范围内的光的光刻掩膜中的等离激元激发产生足够强度的高分辨率远场辐射图，以使晶片上的光刻胶曝光。 步进系统显示了对于掩模缺陷的弹性和在纳米尺寸（45nm-500nm））和用于集成电路设计的晶片上的各种形状的相干清晰特征的印记能力。 可以调整步进系统以对离开掩模的最高等离子体场的平面进行成像。
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2.发明申请公开(公告)号：US20090068570A1
公开(公告)日：2009-03-12
申请号：US12114373
申请日：2008-05-02
申请人： MARTIN C. PECKERAR , MARIO DAGENAIS , BIRENDRA DUTT , JOHN D. BARRY , MICHAEL D. MESSINA, JR. , YVES NGU
发明人： MARTIN C. PECKERAR , MARIO DAGENAIS , BIRENDRA DUTT , JOHN D. BARRY , MICHAEL D. MESSINA, JR. , YVES NGU
CPC分类号： G03F7/70433 , G03F1/50 , G03F1/54
摘要： A nanophotolithography mask includes a layer of an electrically conductive optically opaque material deposited on a mask substrate in which regular arrays of sub-wavelength apertures are formed. The plasmonic excitation in the layer perforated with the sub-wavelength apertures arrays under the light incident on the mask produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer when propagated to the same. The fill-factor of the mask, i.e., the ratio of the total apertures area to the total mask area, may lead to a significant increase in mask manufacturing throughput by FIB or electron beam “writing”. The mask demonstrates the defect resiliency and ability to imprint coherent clear features of nano dimensions and shapes on the wafers for integrated circuits design.
摘要翻译： 纳米光刻掩模包括沉积在其上形成有规则的亚波长孔径阵列的掩模基板上的导电光学不透明材料层。 在入射到掩模上的光下，在亚波长孔径阵列穿孔的层中的等离子体激发产生足够强度的高分辨率远场辐射图，以在传播到晶片上时暴露光致抗蚀剂。 掩模的填充因子，即总孔面积与总掩模面积的比率可能导致通过FIB或电子束“写入”的掩模制造通过量的显着增加。 该面具证明了在集成电路设计的晶圆上印刷纳米尺寸和形状的相干清晰特征的缺陷弹性和能力。
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3.发明授权公开(公告)号：US08054450B2
公开(公告)日：2011-11-08
申请号：US12114409
申请日：2008-05-02
申请人： Martin C. Peckerar , Mario Dagenais , Birendra Dutt , John D. Barry , Michael D. Messina, Jr. , Yves Ngu
发明人： Martin C. Peckerar , Mario Dagenais , Birendra Dutt , John D. Barry , Michael D. Messina, Jr. , Yves Ngu
IPC分类号： G03B27/52
CPC分类号： G03F7/70433 , G03F1/50 , G03F1/54
摘要： A stepper system for ultra-high resolution nano-lithography employs a photolithographic mask which includes a layer of an electrically conductive optically opaque material in which periodic arrays of sub-wavelength apertures are formed. The plasmonic excitation in the photolithographic mask exposed to the light of the wavelength in the range of 197 nm-248 nm, produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer. The stepper system demonstrates the resiliency to the mask defects and ability to imprint coherent clear features of nano dimensions (45 nm-500 nm) and various shapes on the wafers for integrated circuits design. The stepper system may be adjusted to image the plane of the highest plasmonic field exiting the mask.
摘要翻译： 用于超高分辨率纳米光刻的步进系统采用光刻掩模，其包括其中形成有周期性的亚波长孔径阵列的导电光学不透明材料层。 暴露于波长在197nm-248nm范围内的光的光刻掩膜中的等离激元激发产生足够强度的高分辨率远场辐射图，以使晶片上的光刻胶曝光。 步进系统显示了对于掩模缺陷的弹性和在纳米尺寸（45nm-500nm））和用于集成电路设计的晶片上的各种形状的相干清晰特征的印记能力。 可以调整步进系统以对离开掩模的最高等离子体场的平面进行成像。
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4.发明授权Photolithographic mask exhibiting enhanced light transmission due to utilizing sub-wavelength aperture arrays for imaging patterns in nano-lithography 有权光刻掩模由于利用用于纳米光刻成像图案的亚波长孔径阵列显示增强的光透射公开(公告)号：US08052908B2
公开(公告)日：2011-11-08
申请号：US12114373
申请日：2008-05-02
申请人： Martin C. Peckerar , Mario Dagenais , Birendra Dutt , John D. Barry , Michael D. Messina, Jr. , Yves Ngu
发明人： Martin C. Peckerar , Mario Dagenais , Birendra Dutt , John D. Barry , Michael D. Messina, Jr. , Yves Ngu
IPC分类号： B29C33/40
CPC分类号： G03F7/70433 , G03F1/50 , G03F1/54
摘要： A nanophotolithography mask includes a layer of an electrically conductive optically opaque material deposited on a mask substrate in which regular arrays of sub-wavelength apertures are formed. The plasmonic excitation in the layer perforated with the sub-wavelength apertures arrays under the light incident on the mask produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer when propagated to the same. The fill-factor of the mask, i.e., the ratio of the total apertures area to the total mask area, may lead to a significant increase in mask manufacturing throughput by FIB or electron beam “writing”. The mask demonstrates the defect resiliency and ability to imprint coherent clear features of nano dimensions and shapes on the wafers for integrated circuits design.
摘要翻译： 纳米光刻掩模包括沉积在其上形成有规则的亚波长孔径阵列的掩模基板上的导电光学不透明材料层。 在入射到掩模上的光下，在亚波长孔径阵列穿孔的层中的等离子体激发产生足够强度的高分辨率远场辐射图，以在传播到晶片上时暴露光致抗蚀剂。 掩模的填充因子，即总孔面积与总掩模面积的比率可能导致通过FIB或电子束“写入”的掩模制造通过量的显着增加。 该面具证明了在集成电路设计的晶圆上印刷纳米尺寸和形状的相干清晰特征的缺陷弹性和能力。
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