Method and coating materials by ion plating
    1.
    发明授权
    Method and coating materials by ion plating 失效
    方法和涂层材料通过离子镀

    公开(公告)号:US4480010A

    公开(公告)日:1984-10-30

    申请号:US497881

    申请日:1983-05-25

    IPC分类号: C23C14/32 H01J37/32 B32B15/04

    摘要: By use of an ion plating apparatus having an ionizing means which can be operated independently of the electric potential of a substrate, at the initial and final stages of the process of ion plating, a negative potential relative to that of a vapor source is applied to the substrate in order to facilitate the bombardment effect and at the intermediate stage of the process, the potential of the substrate is left floating while the ionization means is being driven in order to control the bombardment effect. In a preferred example, the apparatus has thermoelectron emitting filaments located near the substrate and a pair of anodes located on the side of the vapor source with respect to the substrate and on the opposite side of the substrate. This process permits producing relatively thick and adherent coatings.

    摘要翻译: 通过使用具有电离装置的离子镀装置,其能够独立于衬底的电位而工作,在离子镀处理的初始和最后阶段,将相对于蒸气源的负电位施加到 该衬底以便于轰击效果,并且在该过程的中间阶段,为了控制轰击效应,在驱动电离装置的同时使衬底的电位保持悬空。 在优选实施例中,该装置具有位于基板附近的热电子发射丝线和位于蒸气源侧的一对阳极相对于基底并位于基底的相对侧上。 该方法允许产生相对较厚和粘附的涂层。

    Method of sensing the amount of a thin film deposited during an ion
plating process
    3.
    发明授权
    Method of sensing the amount of a thin film deposited during an ion plating process 失效
    感测在离子电镀过程中沉积的薄膜的量的方法

    公开(公告)号:US4579639A

    公开(公告)日:1986-04-01

    申请号:US512499

    申请日:1983-07-11

    IPC分类号: C23C14/32 C23C14/54 H01J37/32

    CPC分类号: H01J37/32935 C23C14/544

    摘要: A method of sensing the amount of a thin film deposited during an ion plating process, based upon either fixing the value of voltage applied to a plasma-generating probe and measuring the current which flows through the probe into the plasma, this current varying in proportion to the rate of formation of the thin film, or fixing the level of current which flows through the probe into the plasma at a fixed value and measuring the voltage which develops at the probe, this voltage varying in proportion to the rate of formation of the thin film. The results of such measurement can be used to control the thickness of a deposited thin film to a desired value.

    摘要翻译: 基于固定施加到等离子体产生探针上的电压的值并测量流过探针的电流进入等离子体的方式,感测在离子镀处理期间沉积的薄膜的量的方法,该电流按比例变化 到薄膜的形成速率,或将流过探针的电流水平固定在等离子体中的固定值,并测量探针产生的电压,该电压与形成的速率成比例地变化 薄膜。 这种测量的结果可用于将沉积的薄膜的厚度控制到期望的值。