摘要:
The technique of the delta-doping by metalorganic chemical vapor deposition (MOCVD) in GaAs epitaxial layer at 700.degree.-750.degree. C. after deposition of GaAs heteroepitaxial buffer layer exceeding 3 .mu.m thickness on silicon substrate.
摘要:
Disclosed herein are a new mutant of Pseudomonads having ice nucleating activity and an improved method for making snow and ice using it. More particularly, Pseudomonas syringae SO754 of the present invention, which is derived from the parent strain, Pseudomonas syringae SO7 can retain its ice nucleating activity at room temperature.Further, Pseudomonas syringae SO754 of the invention retains its high activity during the fermentation, recovery and drying steps and during the storage without freezing treatment.