公开(公告)号：US5250827A

公开(公告)日：1993-10-05

申请号：US717409

申请日：1991-06-18

申请人： Naoto Inoue ,  Motoo Toyama ,  Hiroshi Takahashi ,  Masahiko Kinbara

发明人： Naoto Inoue ,  Motoo Toyama ,  Hiroshi Takahashi ,  Masahiko Kinbara

IPC分类号： G11C11/22 ,  G11C14/00 ,  H01L29/68

CPC分类号： G11C11/22 ,  G11C14/00

摘要： A high density nonvolatilized semiconductor integrated circuit is comprised of a Dynamic RAM (DRAM) cell unit and a nonvolatile cell unit. The DRAM cell unit is comprised of a first transistor having its gate connected to a word line, its source connected to a bit line and its drain connected to a first capacitor. The first capacitor has its other electrode connected to a first line. The nonvolatile RAM cell unit is comprised of a second transistor having its gate connected to a second line, its source connected to the bit line and its drain connected to a second capacitor. The second capacitor has its other electrode connected to a third line. The second capacitor comprises a ferroelectric substance to which a reverse voltage is applied in order to read out its signal, and the first capacitor comprises a paraelectric substance to which such reverse voltage is not applied. The cycle life of the DRAM cell unit is thereby increased. Further, the composition of the integrated circuit having a smaller number of constituent elements allows high-density circuit formation.

摘要翻译： 高密度非挥发性半导体集成电路由动态RAM（DRAM）单元单元和非易失性单元组成。 DRAM单元单元包括其栅极连接到字线的第一晶体管，其源极连接到位线，其漏极连接到第一电容器。 第一电容器的另一电极连接到第一线。 非易失性RAM单元单元包括其栅极连接到第二线的第二晶体管，其源极连接到位线，并且其漏极连接到第二电容器。 第二电容器的另一电极连接到第三线。 第二电容器包括施加反向电压以便读出其信号的铁电物质，并且第一电容器包括不施加这种反向电压的顺电物质。 因此DRAM单元单元的循环寿命增加。 此外，具有较少数量构成元件的集成电路的组成允许高密度电路形成。

公开(公告)号：US4842372A

公开(公告)日：1989-06-27

申请号：US208260

申请日：1988-06-17

申请人： Motoo Toyama

发明人： Motoo Toyama

IPC分类号： H01L27/12 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1365 ,  G09F9/30 ,  H01C7/118

CPC分类号： H01C7/118 ,  G02F1/1365

摘要： An electro-optical device comprising: a pair of substrates, at least one of the substrates being light-transmissive; an electro-optical material sandwiched between the substrates; a plurality of electro-optical switching elements disposed on an inner surface of at least one of the substrates, each of the switching elements including a first electrode layer, a non-linear-resistive layer substantially composed of an amorphous material of silicon and carbon and a picture element electrode electrically connected to the first electrode layer through the non-linear-resistive layer; and a second electrode layer disposed on an inner surface of the other substrate to define a plurality of elements between the second electrode layer and the plurality of picture element electrodes for applying a voltage to the electro-optical material in a desired picture element.

摘要翻译： 一种电光装置，包括：一对基板，所述基板中的至少一个是透光的; 夹在基板之间的电光材料; 多个电光开关元件设置在至少一个基板的内表面上，每个开关元件包括第一电极层，基本上由硅和碳的无定形材料构成的非线性电阻层，以及 通过非线性电阻层与第一电极层电连接的像素电极; 以及第二电极层，设置在所述另一基板的内表面上，以在所述第二电极层和所述多个像素电极之间限定多个元件，用于向期望的像素中的所述电光材料施加电压。