公开(公告)号：US5785095A

公开(公告)日：1998-07-28

申请号：US769953

申请日：1996-12-19

申请人： Masahiko Kinbara

发明人： Masahiko Kinbara

IPC分类号： D03D47/27

CPC分类号： D03D47/276 ,  D03D47/272

摘要： A combination of a sprocket wheel and a rapier band employed in a rapier loom is improved for extending the service life of the rapier band. Each of the female holes formed in the rapier band for receiving teeth of the sprocket wheel is formed in a frustum-like shape. The teeth of the sprocket wheel have tooth surfaces each including a non-interference portion located above an expansion/contraction-insusceptible layer of the rapier band and an interference portion located underneath the expansion/contraction-insusceptible layer. The non-interference portions do not contact the tooth surfaces, while the interference portions are brought into contact with the wall surfaces of the hole formed in the rapier band when the band is wrapped around the sprocket wheel. Each non-interference portion has a curved surface generated by an involute curve, while each interference portion presents a curved surface which matches the shape of the corresponding wall surface of the female hole formed in the rapier band in the wrapped state thereof.

摘要翻译： 改进了剑杆织机中使用的链轮和剑杆带的组合，以延长剑杆织带的使用寿命。 形成在用于接收链轮的齿的剑杆带上的每个阴孔形成为截头锥状。 链轮的齿部具有各自包括位于剑杆带的膨胀/收缩不易层之上的非干涉部分和位于膨胀/收缩不易渗透层下方的干涉部分的齿面。 当带缠绕在链轮上时，不干涉部分不接触齿表面，同时干涉部分与形成在剑杆带上的孔的壁表面接触。 每个非干涉部分具有由渐开线曲线产生的弯曲表面，而每个干涉部分呈现与其缠绕状态下形成在剑杆带上的阴孔相对应的壁表面的形状相匹配的曲面。

公开(公告)号：US5250827A

公开(公告)日：1993-10-05

申请号：US717409

申请日：1991-06-18

申请人： Naoto Inoue ,  Motoo Toyama ,  Hiroshi Takahashi ,  Masahiko Kinbara

发明人： Naoto Inoue ,  Motoo Toyama ,  Hiroshi Takahashi ,  Masahiko Kinbara

IPC分类号： G11C11/22 ,  G11C14/00 ,  H01L29/68

CPC分类号： G11C11/22 ,  G11C14/00

摘要： A high density nonvolatilized semiconductor integrated circuit is comprised of a Dynamic RAM (DRAM) cell unit and a nonvolatile cell unit. The DRAM cell unit is comprised of a first transistor having its gate connected to a word line, its source connected to a bit line and its drain connected to a first capacitor. The first capacitor has its other electrode connected to a first line. The nonvolatile RAM cell unit is comprised of a second transistor having its gate connected to a second line, its source connected to the bit line and its drain connected to a second capacitor. The second capacitor has its other electrode connected to a third line. The second capacitor comprises a ferroelectric substance to which a reverse voltage is applied in order to read out its signal, and the first capacitor comprises a paraelectric substance to which such reverse voltage is not applied. The cycle life of the DRAM cell unit is thereby increased. Further, the composition of the integrated circuit having a smaller number of constituent elements allows high-density circuit formation.

摘要翻译： 高密度非挥发性半导体集成电路由动态RAM（DRAM）单元单元和非易失性单元组成。 DRAM单元单元包括其栅极连接到字线的第一晶体管，其源极连接到位线，其漏极连接到第一电容器。 第一电容器的另一电极连接到第一线。 非易失性RAM单元单元包括其栅极连接到第二线的第二晶体管，其源极连接到位线，并且其漏极连接到第二电容器。 第二电容器的另一电极连接到第三线。 第二电容器包括施加反向电压以便读出其信号的铁电物质，并且第一电容器包括不施加这种反向电压的顺电物质。 因此DRAM单元单元的循环寿命增加。 此外，具有较少数量构成元件的集成电路的组成允许高密度电路形成。

公开(公告)号：US5124272A

公开(公告)日：1992-06-23

申请号：US565960

申请日：1990-08-13

申请人： Naoto Saito ,  Kenji Aoki ,  Tadao Akamine ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Masahiko Kinbara

发明人： Naoto Saito ,  Kenji Aoki ,  Tadao Akamine ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Masahiko Kinbara

IPC分类号： H01L21/225 ,  H01L21/336

CPC分类号： H01L29/66575 ,  H01L21/2254 ,  H01L29/66628 ,  H01L29/66636

摘要： An impurity adsorption layer is selectively formed from a gas containing an impurity on a semiconductor surface. Solid-phase diffusion of the impurity is effected from the impurity adsorption layer into the semiconductor surface to form a source region and a drain region having a sufficiently small resistivity and an ultrashallow PN junction depth, thereby producing a metal-insulator semiconductor field-effect-transistor featuring fast operating speed and reduced dimensions.