公开(公告)号：US20100015797A1

公开(公告)日：2010-01-21

申请号：US12063718

申请日：2006-08-25

申请人： Toshio Saito ,  Akira Otaguro ,  Manabu Otake ,  Yoshiya Takahira ,  Namio Katagiri ,  Nobuaki Miyakawa

发明人： Toshio Saito ,  Akira Otaguro ,  Manabu Otake ,  Yoshiya Takahira ,  Namio Katagiri ,  Nobuaki Miyakawa

IPC分类号： H01L21/768

CPC分类号： H01L25/50 ,  H01L21/76898 ,  H01L21/823871 ,  H01L23/481 ,  H01L23/585 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0657 ,  H01L27/0694 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： When a tungsten film (43) is embedded inside of a conductive groove (4A) formed in a wafer (W2) and a silicon oxide film (36) thereon and having a high aspect ratio, film formation and etch back of the tungsten film (43) are successively performed in a chamber of the same apparatus, therefore, a film thickness of the tungsten film (43) deposited in one film formation step is made to be thin. Whereby problems, such as exfoliation of the tungsten film (43), generation of micro-cracks, and occurrence of warpage and cracks of the wafer (W2), are avoided.

摘要翻译： 当将钨膜（43）嵌入形成在晶片（W2）和氧化硅膜（36）上的导电槽（4A）内并具有高纵横比，钨膜的成膜和回蚀（ 43）在相同装置的腔室中连续地进行，因此，在一个成膜步骤中沉积的钨膜（43）的膜厚变薄。 由此，避免了钨膜（43）的剥离，微裂纹的产生，以及晶片（W2）的翘曲和裂纹的发生等问题。

公开(公告)号：US07795137B2

公开(公告)日：2010-09-14

申请号：US12063718

申请日：2006-08-25

申请人： Toshio Saito ,  Akira Otaguro ,  Manabu Otake ,  Yoshiya Takahira ,  Namio Katagiri ,  Nobuaki Miyakawa

发明人： Toshio Saito ,  Akira Otaguro ,  Manabu Otake ,  Yoshiya Takahira ,  Namio Katagiri ,  Nobuaki Miyakawa

IPC分类号： H01L21/4763

CPC分类号： H01L25/50 ,  H01L21/76898 ,  H01L21/823871 ,  H01L23/481 ,  H01L23/585 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0657 ,  H01L27/0694 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： When a tungsten film (43) is embedded inside of a conductive groove (4A) formed in a wafer (W2) and a silicon oxide film (36) thereon and having a high aspect ratio, film formation and etch back of the tungsten film (43) are successively performed in a chamber of the same apparatus, therefore, a film thickness of the tungsten film (43) deposited in one film formation step is made to be thin. Whereby problems, such as exfoliation of the tungsten film (43), generation of micro-cracks, and occurrence of warpage and cracks of the wafer (W2), are avoided.

摘要翻译： 当将钨膜（43）嵌入形成在晶片（W2）和氧化硅膜（36）上的导电槽（4A）内并具有高纵横比，钨膜的成膜和回蚀（ 43）在相同装置的腔室中连续地进行，因此，在一个成膜步骤中沉积的钨膜（43）的膜厚变薄。 由此，避免了钨膜（43）的剥离，微裂纹的产生，以及晶片（W2）的翘曲和裂纹的发生等问题。