公开(公告)号：US08039940B2

公开(公告)日：2011-10-18

申请号：US11956358

申请日：2007-12-14

申请人： Kohji Kanamori ,  Teiichirou Nishizaka ,  Noriaki Kodama ,  Isao Katayama ,  Yoshihiro Matsuura ,  Kaoru Ishihara ,  Yasushi Harada ,  Naruaki Minenaga ,  Chihiro Oshita

发明人： Kohji Kanamori ,  Teiichirou Nishizaka ,  Noriaki Kodama ,  Isao Katayama ,  Yoshihiro Matsuura ,  Kaoru Ishihara ,  Yasushi Harada ,  Naruaki Minenaga ,  Chihiro Oshita

IPC分类号： H01L23/26

CPC分类号： H01L23/26 ,  H01L21/3221 ,  H01L23/3128 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.

摘要翻译： 根据本发明，在半导体芯片的侧表面和底表面上沉积吸气层。 然后将半导体芯片安装在封装的板上，使得在底表面上形成肖特基势垒。 通过这种结构，可以通过沉积在半导体芯片的侧表面和/或底表面上的缺陷层和肖特基势垒捕获穿过封装板的金属离子。

公开(公告)号：US20080099883A1

公开(公告)日：2008-05-01

申请号：US11956358

申请日：2007-12-14

申请人： Kohji KANAMORI ,  Teiichirou Nishizaka ,  Noriaki Kodama ,  Isao Katayama ,  Yoshihiro Matsuura ,  Kaoru Ishihara ,  Yasushi Harada ,  Naruaki Minenaga ,  Chihiro Oshita

发明人： Kohji KANAMORI ,  Teiichirou Nishizaka ,  Noriaki Kodama ,  Isao Katayama ,  Yoshihiro Matsuura ,  Kaoru Ishihara ,  Yasushi Harada ,  Naruaki Minenaga ,  Chihiro Oshita

IPC分类号： H01L29/30

CPC分类号： H01L23/26 ,  H01L21/3221 ,  H01L23/3128 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.

摘要翻译： 根据本发明，在半导体芯片的侧表面和底表面上沉积吸气层。 然后将半导体芯片安装在封装的板上，使得在底表面上形成肖特基势垒。 通过这种结构，可以通过沉积在半导体芯片的侧表面和/或底表面上的缺陷层和肖特基势垒捕获穿过封装板的金属离子。

公开(公告)号：US20050218490A1

公开(公告)日：2005-10-06

申请号：US11078447

申请日：2005-03-14

申请人： Kohji Kanamori ,  Teiichirou Nishizaka ,  Noriaki Kodama ,  Isao Katayama ,  Yoshihiro Matsuura ,  Kaoru Ishihara ,  Yasushi Harada ,  Naruaki Minenaga ,  Chihiro Oshita

发明人： Kohji Kanamori ,  Teiichirou Nishizaka ,  Noriaki Kodama ,  Isao Katayama ,  Yoshihiro Matsuura ,  Kaoru Ishihara ,  Yasushi Harada ,  Naruaki Minenaga ,  Chihiro Oshita

IPC分类号： H01L27/10 ,  H01L21/322 ,  H01L21/52 ,  H01L21/58 ,  H01L23/26 ,  H01L23/31 ,  H01L23/58 ,  H01L29/00

CPC分类号： H01L23/26 ,  H01L21/3221 ,  H01L23/3128 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.

摘要翻译： 根据本发明，在半导体芯片的侧表面和底表面上沉积吸气层。 然后将半导体芯片安装在封装的板上，使得在底表面上形成肖特基势垒。 通过这种结构，可以通过沉积在半导体芯片的侧表面和/或底表面上的缺陷层和肖特基势垒捕获穿过封装板的金属离子。

公开(公告)号：US07790579B2

公开(公告)日：2010-09-07

申请号：US11398534

申请日：2006-04-06

申请人： Kohji Kanamori ,  Teiichirou Nishizaka ,  Noriaki Kodama ,  Isao Katayama ,  Yoshihiro Matsuura ,  Kaoru Ishihara ,  Yasushi Harada ,  Naruaki Minenaga ,  Chihiro Oshita

发明人： Kohji Kanamori ,  Teiichirou Nishizaka ,  Noriaki Kodama ,  Isao Katayama ,  Yoshihiro Matsuura ,  Kaoru Ishihara ,  Yasushi Harada ,  Naruaki Minenaga ,  Chihiro Oshita

IPC分类号： H01L21/322

CPC分类号： H01L23/26 ,  H01L21/3221 ,  H01L23/3128 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.

摘要翻译： 根据本发明，在半导体芯片的侧表面和底表面上沉积吸气层。 然后将半导体芯片安装在封装的板上，使得在底表面上形成肖特基势垒。 通过这种结构，可以通过沉积在半导体芯片的侧表面和/或底表面上的缺陷层和肖特基势垒捕获穿过封装板的金属离子。

公开(公告)号：US07327019B2

公开(公告)日：2008-02-05

申请号：US11078447

申请日：2005-03-14

申请人： Kohji Kanamori ,  Teiichirou Nishizaka ,  Noriaki Kodama ,  Isao Katayama ,  Yoshihiro Matsuura ,  Kaoru Ishihara ,  Yasushi Harada ,  Naruaki Minenaga ,  Chihiro Oshita

发明人： Kohji Kanamori ,  Teiichirou Nishizaka ,  Noriaki Kodama ,  Isao Katayama ,  Yoshihiro Matsuura ,  Kaoru Ishihara ,  Yasushi Harada ,  Naruaki Minenaga ,  Chihiro Oshita

IPC分类号： H01L23/20 ,  H01L23/02 ,  H01L23/053 ,  H01L23/12 ,  H01L23/14

CPC分类号： H01L23/26 ,  H01L21/3221 ,  H01L23/3128 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.

摘要翻译： 根据本发明，在半导体芯片的侧表面和底表面上沉积吸气层。 然后将半导体芯片安装在封装的板上，使得在底表面上形成肖特基势垒。 通过这种结构，可以通过沉积在半导体芯片的侧表面和/或底表面上的缺陷层和肖特基势垒捕获穿过封装板的金属离子。

公开(公告)号：US20060180891A1

公开(公告)日：2006-08-17

申请号：US11398534

申请日：2006-04-06

申请人： Kohji Kanamori ,  Teiichirou Nishizaka ,  Noriaki Kodama ,  Isao Katayama ,  Yoshihiro Matsuura ,  Kaoru Ishihara ,  Yasushi Harada ,  Naruaki Minenaga ,  Chihiro Oshita

发明人： Kohji Kanamori ,  Teiichirou Nishizaka ,  Noriaki Kodama ,  Isao Katayama ,  Yoshihiro Matsuura ,  Kaoru Ishihara ,  Yasushi Harada ,  Naruaki Minenaga ,  Chihiro Oshita

IPC分类号： H01L31/07 ,  H01L27/095 ,  H01L31/108 ,  H01L29/47 ,  H01L29/812

CPC分类号： H01L23/26 ,  H01L21/3221 ,  H01L23/3128 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.

摘要翻译： 根据本发明，在半导体芯片的侧表面和底表面上沉积吸气层。 然后将半导体芯片安装在封装的板上，使得在底表面上形成肖特基势垒。 通过这种结构，可以通过沉积在半导体芯片的侧表面和/或底表面上的缺陷层和肖特基势垒捕获穿过封装板的金属离子。