Process for measuring overlay misregistration during semiconductor wafer
fabrication
    2.
    发明授权
    Process for measuring overlay misregistration during semiconductor wafer fabrication 失效
    半导体晶片制造过程中测量重叠重合的过程

    公开(公告)号:US5438413A

    公开(公告)日:1995-08-01

    申请号:US25435

    申请日:1993-03-03

    CPC分类号: G03F7/70633

    摘要: A process for measuring overlay misregistration during semiconductor wafer fabrication including the use of an interferometric microscope in combination with a camera, a wafer transport stage, and data processing electronics to form an inspection system which can utilize either broadband or narrowband light, and large or small numerical aperture (NA) to develop a series of interference images taken at different Z (vertical) planes relative to the surface under investigation or P (pathlength) positions relative to interferometer arm difference. The data in these planes is then used to calculate the magnitude and phase of the mutual coherence between the object wave and the reference wave for each pixel in the image planes, and synthetic images are formed, the brightness of which is proportional to either the complex magnitude (the Magnitude Contrast Image or MCI) or the phase of the mutual coherence as the optical pathlength (the Phase Contrast Image or PCI) is varied. The difference between synthetic images relating to target attribute position and bullet attribute position are then used as a means of detecting misregistration between the processing layer including the bullet attribute and the processing layer including the target attribute.

    摘要翻译: 一种用于测量半导体晶片制造期间的重叠配准的方法,包括使用干涉式显微镜与照相机,晶片传送台和数据处理电子装置组合,形成可利用宽带或窄带光以及大或小的光检测系统 数值孔径(NA)以相对于正在研究的表面或相对于干涉仪臂差的P(路径长度)位置在不同的Z(垂直)平面处拍摄的一系列干涉图像。 然后使用这些平面中的数据来计算像平面中每个像素的对象波和参考波之间的相互相干的幅度和相位,并且形成合成图像,其亮度与复合物 幅度(大小对比度图像或MCI)或作为光程长度(相位对比图像或PCI)的相互相干的相位发生变化。 然后,将与目标属性位置和子弹属性位置相关的合成图像之间的差异用作检测包括子弹属性的处理层和包括目标属性的处理层之间的重合失调的手段。