公开(公告)号：US08142609B2

公开(公告)日：2012-03-27

申请号：US12055680

申请日：2008-03-26

申请人： Syuichi Takahashi ,  Hiroki Matsumaru ,  Nobutaka Nakao ,  Kenji Komatsu

发明人： Syuichi Takahashi ,  Hiroki Matsumaru ,  Nobutaka Nakao ,  Kenji Komatsu

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/306 ,  H01L21/683 ,  B23B31/28

CPC分类号： H01L21/6831 ,  H01J37/32431 ,  H01J2237/2001 ,  H01L21/67109 ,  H02N13/00 ,  Y10T279/23

摘要： A plasma processing apparatus including a mounting table that includes a mounting table body having a temperature adjusted to be a predetermined level, and an electrostatic chuck disposed on an upper portion of the mounting table body, joined thereto with an acrylic adhesive having a thickness of 60 μm or more, to adsorb the substrate thereon. The apparatus further including first and second heat transfer gas diffusion regions formed at a center and a circumferential edge, respectively, of an upper surface of the electrostatic chuck, and first and second heat transfer gas supply units to supply heat transfer gas to the first and second heat transfer gas diffusion regions, respectively. A volume ratio of the second heat transfer gas diffusion region to the first heat transfer gas diffusion region is equal to or less than 0.1

摘要翻译： 一种等离子体处理装置，包括：安装台，其具有调整为预定水平的温度的安装台主体和设置在安装台主体的上部的静电卡盘，其与丙烯酸粘合剂连接，厚度为60 μm以上，以在其上吸附基板。 该装置还包括分别形成在静电卡盘的上表面的中心和圆周边缘处的第一和第二传热气体扩散区域，以及第一和第二传热气体供应单元，用于向第一和第二传热气体扩散区域提供传热气体到第一和第二传热气体扩散区域， 第二传热气体扩散区域。 第二传热气体扩散区域与第一传热气体扩散区域的体积比等于或小于0.1

公开(公告)号：US20080242086A1

公开(公告)日：2008-10-02

申请号：US12057518

申请日：2008-03-28

申请人： Hiroki MATSUMARU ,  Nobutaka Nakao ,  Kenji Komatsu ,  Syuichi Takahashi

发明人： Hiroki MATSUMARU ,  Nobutaka Nakao ,  Kenji Komatsu ,  Syuichi Takahashi

IPC分类号： H01L21/44

CPC分类号： H01L21/6833 ,  H01J37/32009 ,  H01J37/32165

摘要： A plasma processing method, for performing a plasma process on a target substrate by generating a plasma between an upper electrode and a lower electrode facing each other by means of applying a radio frequency power therebetween, includes applying a DC voltage of a positive or negative polarity to an inner electrode of an electrostatic chuck on the lower electrode to attract and hold the target substrate thereon; and changing the positive or negative polarity of the DC voltage applied to the inner electrode of the electrostatic chuck to an opposite polarity thereto between a time when the application of the radio frequency power from the radio frequency power supply is started to perform the plasma process of the target substrate and a time when the plasma process is completed.

摘要翻译： 一种等离子体处理方法，用于通过在上部电极和下部电极之间通过在其间施加射频电力而产生等离子体，从而在目标基板上进行等离子体处理，包括：施加正极性或负极性的直流电压 连接到下电极上的静电卡盘的内电极，以在其上吸引和保持目标基板; 并且在开始施加来自射频电源的射频功率之间的时刻开始施加到静电卡盘的内部电极的直流电压的正极性或负极性与其相反的极性，以进行等离子体处理 目标衬底和等离子体处理完成的时间。

公开(公告)号：US20080308230A1

公开(公告)日：2008-12-18

申请号：US12055680

申请日：2008-03-26

申请人： Syuichi TAKAHASHI ,  Hiroki Matsumaru ,  Nobutaka Nakao ,  Kenji Komatsu

发明人： Syuichi TAKAHASHI ,  Hiroki Matsumaru ,  Nobutaka Nakao ,  Kenji Komatsu

IPC分类号： H01L21/3065 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01L21/6831 ,  H01J37/32431 ,  H01J2237/2001 ,  H01L21/67109 ,  H02N13/00 ,  Y10T279/23

摘要： A plasma processing apparatus 1, in which a substrate W is mounted on a mounting table 11 in a processing chamber 10 and processing gas supplied in the processing chamber 10 is made into plasma to a perform plasma treatment on the substrate W, wherein the mounting table 11 has a mounting table body 12 having a temperature adjusted to be a predetermined level, and an electrostatic chuck 13 disposed on an upper portion of the mounting table body 12 and adsorbing the substrate W thereon; a first heat transfer gas diffusion region 47 is formed at a center of an upper surface of the electrostatic chuck 13 and a second heat transfer gas diffusion region 48 is formed at a circumferential edge of the upper surface of the electrostatic chuck 13; a first heat transfer gas supply unit 51 supplying heat transfer gas to the first heat transfer gas diffusion region 47 and a second heat transfer gas supply unit 52 supplying heat transfer gas to the second heat transfer gas diffusion region 48 are included; and a volume ratio of the second heat transfer gas diffusion region 48 to the first heat transfer gas diffusion region 47 is equal to or less than 0.1.

摘要翻译： 等离子体处理装置1，其中将基板W安装在处理室10中的安装台11上，并且将处理室10中供应的处理气体制成等离子体以对基板W执行等离子体处理，其中安装台 11具有温度调节到预定水平的安装台主体12和设置在安装台主体12的上部并且吸附基板W的静电卡盘13; 在静电卡盘13的上表面的中心形成有第一传热气体扩散区域47，在静电卡盘13的上表面的周缘形成有第二传热气体扩散区域48。 包括向第一传热气体扩散区域47供给传热气体的第一传热气体供给单元51和向第二传热气体扩散区域48供给传热气体的第二传热气体供给单元52。 并且第二传热气体扩散区域48与第一传热气体扩散区域47的体积比等于或小于0.1。