公开(公告)号：US08121799B2

公开(公告)日：2012-02-21

申请号：US12081404

申请日：2008-04-15

申请人： Nobutoshi Terasawa ,  Minoru Obata ,  Noriaki Koyama

发明人： Nobutoshi Terasawa ,  Minoru Obata ,  Noriaki Koyama

IPC分类号： G01B3/44 ,  G01B3/52 ,  G01N37/00

CPC分类号： F27B17/0025

摘要： A method of estimating the life of a heater wire, including the steps of: detecting a maximum value of electric power supplied to the heater wire during a temperature rising period during which a temperature is elevated to a preset heating temperature, obtaining an index indicative of the amplitude of the electric power, and giving a notice that the heater wire is approaching the end of its life when the electric power and the index indicative of the of amplitude of the electric power exceed threshold values respectively provided thereto.

摘要翻译： 一种估计加热线寿命的方法，包括以下步骤：在温度升高到预设加热温度的升温期间，检测供应给加热丝的电力的最大值，得到指示 电功率的振幅，并且当电功率和表示电功率的幅度的指标分别提供给它们时，发出加热线接近寿命结束的通知。

公开(公告)号：US20080262791A1

公开(公告)日：2008-10-23

申请号：US12081404

申请日：2008-04-15

申请人： Nobutoshi Terasawa ,  Minoru Obata ,  Noriaki Koyama

发明人： Nobutoshi Terasawa ,  Minoru Obata ,  Noriaki Koyama

IPC分类号： G06F15/00

CPC分类号： F27B17/0025

摘要： A life estimating method for a heater wire, which can estimate the life of the heater wire more appropriately than conventional one, by utilizing data obtained during a period (e.g., a temperature rising period), in which a sign of disconnection of the heater wire is likely to be seen, upon estimating the life in advance before the heater wire used in a heating apparatus is disconnected. This method comprises the steps of: detecting a maximum value of magnitude of electric power supplied to the heater wire during the temperature rising period provided for elevating the temperature up to a heating temperature, by supplying the electric power to the heater wire prior to providing a heating process to a wafer or wafers. The method further comprises obtaining an index indicative of magnitude of amplitude of the electric power, and giving a notice that the heater wire is approaching the end of its life when the indexes respectively indicative of the magnitude of the electric power and the magnitude of amplitude of the electric power exceed threshold values respectively provided thereto.

摘要翻译： 一种用于加热器线的寿命估计方法，其可以通过利用在一段时间（例如，升温时段）期间获得的数据，其比较常规的加热器丝的寿命更合适地估计加热器的寿命，其中加热器线断开的符号 在加热装置中使用的加热丝线断开之前预先估计寿命是可能的。 该方法包括以下步骤：在提供用于将温度升高至加热温度的温度上升期间期间，检测供应给加热丝的电力的最大值，通过在提供加热线之前向加热丝供电 加热到晶片或晶圆。 该方法还包括获得指示电力幅度大小的指标，并且当分别指示电力幅度和幅度幅度的指标时，给出加热器线接近其寿命结束的通知 电功率超过分别提供给它的阈值。

公开(公告)号：US20120169505A1

公开(公告)日：2012-07-05

申请号：US13350625

申请日：2012-01-13

申请人： Nobutoshi TERASAWA ,  Minoru Obata ,  Noriaki Koyama

发明人： Nobutoshi TERASAWA ,  Minoru Obata ,  Noriaki Koyama

IPC分类号： G08B21/00

CPC分类号： F27B17/0025

摘要： A life estimating method for a heater wire utilizes data obtained during a period (e.g., a temperature rising period), in which a sign of disconnection of the heater wire is likely to be seen. This method includes detecting a maximum magnitude value of electric power supplied to the heater wire during the temperature rising period for elevating the temperature to a heating temperature prior to providing a heating process to a wafer or wafers. The method further includes obtaining an index indicative of a magnitude of the amplitude of the electric power, and giving notice that the heater wire is approaching the end of its life when the indexes respectively indicate that the electric power magnitude and the amplitude magnitude exceed threshold values respectively.

摘要翻译： 加热丝的寿命估计方法利用在可能看到加热丝线的断开符号的期间（例如升温期间）中获得的数据。 该方法包括检测在升温期间提供给加热丝的电力的最大幅度值，以在将加热过程提供给晶片或晶片之前将温度升高至加热温度。 该方法还包括获得指示电力振幅大小的指标，并且当指标分别指示电力幅度和振幅幅度超过阈值时，注意到加热器线接近其寿命结束 分别。

公开(公告)号：US08945413B2

公开(公告)日：2015-02-03

申请号：US13554582

申请日：2012-07-20

申请人： Ayuta Suzuki ,  Songyun Kang ,  Tsuyoshi Moriya ,  Nobutoshi Terasawa ,  Yoshiaki Okabe

发明人： Ayuta Suzuki ,  Songyun Kang ,  Tsuyoshi Moriya ,  Nobutoshi Terasawa ,  Yoshiaki Okabe

IPC分类号： B44C1/22 ,  B29C59/14 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC分类号： C23C16/4404 ,  B29C59/14 ,  H01J37/32467 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/68757 ,  Y10S156/915

摘要： Etching is performed through the following process. A substrate is loaded into a processing chamber and mounted on a mounting table therein. Then, in the state where a ring member at least a surface of which is made of a same material as a main component of an etching target film is provided to surround the substrate, a processing gas is injected in a shower-like manner from a gas supply unit oppositely facing the substrate and the etching target film is etched by using a plasma of the processing gas; and evacuating the inside of the processing chamber through an exhaust path. Through this process, unbalanced distribution of plasma active species in the vicinity of a circumferential edge portion of the substrate can be suppressed.

摘要翻译： 蚀刻通过以下过程进行。 将基板装载到处理室中并安装在其中的安装台上。 然后，在以与蚀刻对象膜的主要成分相同的材料形成的环构件设置为包围基板的状态下，将处理气体从沐浴状注入到 通过使用处理气体的等离子体来蚀刻与基板相对的气体供给单元和蚀刻目标膜， 并且通过排气路径排出处理室的内部。 通过该处理，可以抑制基板的周缘部附近的等离子体活性物质的不平衡分布。

公开(公告)号：US20130186858A1

公开(公告)日：2013-07-25

申请号：US13554582

申请日：2012-07-20

申请人： Ayuta SUZUKI ,  Songyun Kang ,  Tsuyoshi Moriya ,  Nobutoshi Terasawa ,  Yoshiaki Okabe

发明人： Ayuta SUZUKI ,  Songyun Kang ,  Tsuyoshi Moriya ,  Nobutoshi Terasawa ,  Yoshiaki Okabe

IPC分类号： B29C59/14

CPC分类号： C23C16/4404 ,  B29C59/14 ,  H01J37/32467 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/68757 ,  Y10S156/915

摘要： Etching is performed through the following process. A substrate is loaded into a processing chamber and mounted on a mounting table therein. Then, in the state where a ring member at least a surface of which is made of a same material as a main component of an etching target film is provided to surround the substrate, a processing gas is injected in a shower-like manner from a gas supply unit oppositely facing the substrate and the etching target film is etched by using a plasma of the processing gas; and evacuating the inside of the processing chamber through an exhaust path. Through this process, unbalanced distribution of plasma active species in the vicinity of a circumferential edge portion of the substrate can be suppressed.