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1.发明申请公开(公告)号：US20130143473A1
公开(公告)日：2013-06-06
申请号：US13514413
申请日：2011-06-06
摘要： The present invention provides an apparatus for removing the unnecessary thin-film layer on the periphery of the substrate of the plate-like member having a square shape, on the surface of which substrate is formed a thin-film layer. The apparatus comprises a chamber to treat the peripheral part where the peripheral part of the plate-like member is inserted and where the unnecessary thin-film layer on the peripheral part of the plate-like member is removed; and a means to move the plate-like member. The chamber to treat the peripheral part comprises a cover to prevent the scattering of the sprayed particles and the dust for treating the peripheral part, the cover having one of its end-sides that forms a ceiling being closed and having the other end-side that is opposed to the ceiling being open and a suctioning cover for treating the peripheral part, having an opening that has the same shape as the opening of the cover to prevent the scattering of the dust. In the chamber to treat the peripheral part, a blasting nozzle for spraying particles for treating the peripheral part is disposed on the cover to prevent the scattering of the dust, so that the mouth of the blasting nozzle is covered by the wall of the cover to prevent the scattering of the sprayed particles and the dust.
摘要翻译： 本发明提供了一种用于去除在具有正方形形状的板状构件的基板的周边上的不需要的薄膜层的装置，其表面上形成有薄膜层。 该装置包括用于处理插入板状构件的周边部分的周边部分的腔室，并且去除板状构件的周边部分上的不需要的薄膜层; 以及移动板状构件的装置。 用于处理周边部分的腔室包括防止喷射的颗粒和用于处理周边部分的灰尘的飞散的盖，所述盖具有形成天花板的其中一端封闭，并且另一端侧具有 与天花板开放相对，并且具有用于处理周边部分的抽吸盖，具有与盖的开口相同形状的开口，以防止灰尘的飞散。 在用于处理周边部分的室中，在盖上设置用于喷射颗粒以用于处理周边部分的喷射喷嘴以防止灰尘的飞散，使得喷射喷嘴的口被盖的壁覆盖 防止喷射的颗粒和灰尘的飞散。
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公开(公告)号：US20110028075A1
公开(公告)日：2011-02-03
申请号：US12937128
申请日：2009-04-10
申请人： Mikitoshi Hiraga , Ryoichi Tsunoda , Kenichiro Inagaki , Kazuyoshi Maeda , Yukinori Suzuki , Norihito Shibuya
发明人： Mikitoshi Hiraga , Ryoichi Tsunoda , Kenichiro Inagaki , Kazuyoshi Maeda , Yukinori Suzuki , Norihito Shibuya
摘要： A nozzle, a nozzle unit having a plurality of nozzles, and a blasting machine equipped with the nozzle unit, which can achieve a micro-machining with a high precision and a high productivity for the blasting process, are provided.Since the portion for escape 13c is formed at the distal end of the ejecting portion 13, if the distance between the surface of the work and the nozzle 11 is shortened to suppress the broadening of the flow of the abrasives, the reflected abrasives do not remain within the space between the surface of the work and the distal end of the ejecting portion 13. Thus, the blasting process with a high precision can be achieved. Further, since the nozzle 11m and the nozzle 11n can be arranged so as to correspond to the width of the surface of the work to be processed by the rotational device 16, it is possible to blast a wider area of the surface of the work while the nozzle unit 10 or the blasting machine 20 sweep one time. Thus, the high productivity of the blasting process can be achieved.
摘要翻译： 提供了具有多个喷嘴的喷嘴，具有多个喷嘴的喷嘴单元和配备有喷嘴单元的喷砂机，其能够以高精度和高生产率进行喷砂处理的微加工。 由于在排出部13的前端形成有用于排出部13c的部分，如果工件表面与喷嘴11之间的距离缩短以抑制磨料的流动扩大，则反射的磨料不会残留 在工件表面和喷射部分13的远端之间的空间内。因此，可以实现高精度的喷砂处理。 此外，由于喷嘴11m和喷嘴11n可以布置成与由旋转装置16处理的工件的表面的宽度相对应，所以可以在工件的表面的较大面积上喷涂，同时 喷嘴单元10或喷砂机20一次扫掠。 因此，可以实现爆破过程的高生产率。
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3.发明授权公开(公告)号：US09308624B2
公开(公告)日：2016-04-12
申请号：US13514413
申请日：2011-06-06
摘要： The present invention provides an apparatus for removing the unnecessary thin-film layer on the periphery of the substrate of the plate-like member having a square shape, on the surface of which substrate is formed a thin-film layer. The apparatus comprises a chamber to treat the peripheral part where the peripheral part of the plate-like member is inserted and where the unnecessary thin-film layer on the peripheral part of the plate-like member is removed; and a means to move the plate-like member. The chamber to treat the peripheral part comprises a cover to prevent the scattering of the sprayed particles and the dust for treating the peripheral part, the cover having one of its end-sides that forms a ceiling being closed and having the other end-side that is opposed to the ceiling being open and a suctioning cover for treating the peripheral part, having an opening that has the same shape as the opening of the cover to prevent the scattering of the dust. In the chamber to treat the peripheral part, a blasting nozzle for spraying particles for treating the peripheral part is disposed on the cover to prevent the scattering of the dust, so that the mouth of the blasting nozzle is covered by the wall of the cover to prevent the scattering of the sprayed particles and the dust.
摘要翻译： 本发明提供了一种用于去除在具有正方形形状的板状构件的基板的周边上的不需要的薄膜层的装置，其表面上形成有薄膜层。 该装置包括用于处理插入板状构件的周边部分的周边部分的腔室，并且去除板状构件的周边部分上的不需要的薄膜层; 以及移动板状构件的装置。 用于处理周边部分的腔室包括防止喷射的颗粒和用于处理周边部分的灰尘的飞散的盖，所述盖具有形成天花板的其中一端封闭，并且另一端侧具有 与天花板开放相对，并且具有用于处理周边部分的抽吸盖，具有与盖的开口相同形状的开口，以防止灰尘的飞散。 在用于处理周边部分的室中，在盖上设置用于喷射颗粒以用于处理周边部分的喷射喷嘴以防止灰尘的飞散，使得喷射喷嘴的口被盖的壁覆盖 防止喷射的颗粒和灰尘的飞散。
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4.发明授权Warp correction device and warp correction method for semiconductor element substrate 有权半导体元件基板的经线矫正装置及翘曲矫正方法公开(公告)号：US09136192B2
公开(公告)日：2015-09-15
申请号：US14353895
申请日：2012-07-13
申请人： Kouichi Inoue , Kazuyoshi Maeda , Norihito Shibuya
发明人： Kouichi Inoue , Kazuyoshi Maeda , Norihito Shibuya
IPC分类号： H01L23/58 , H01L29/10 , H01L21/66 , H01L21/67 , H01L21/683 , H01J37/317 , H01L21/265 , H01L33/00
CPC分类号： H01L22/12 , H01J37/3171 , H01L21/26 , H01L21/265 , H01L21/67288 , H01L21/6838 , H01L22/20 , H01L22/26 , H01L33/0095 , H01L2924/0002 , H01L2924/00
摘要： A warp correction apparatus includes an injection mechanism including a nozzle that performs injection treatment, an adsorption table that holds the substrate by adsorption at a principal surface side or a film surface side, a moving mechanism that moves the adsorption table so that the substrate relatively moves with respect to an injection area of an injection particle by the nozzle, an injection treatment chamber that houses the substrate held on the adsorption table and in the interior of which injection treatment is performed, a measurement mechanism that measures a warp of the substrate, and a control device that, based on a difference between a target warp amount and a warp amount measured by the measurement mechanism, performs at least either one of a setting processing of an injection treatment condition of the injection mechanism and an accept/reject determination of the substrate for which injection treatment has been performed.
摘要翻译： 翘曲修正装置包括：注射机构，其包括执行注射处理的喷嘴;吸附台，其通过主表面侧或膜表面侧的吸附而保持基板;移动机构，其移动吸附台，使得基板相对移动 相对于喷嘴的注射粒子的注入面积，容纳保持在吸附台上的衬底和进行注射处理的内部的注射处理室，测量衬底的翘曲的测量机构，以及 控制装置，其基于目标翘曲量与通过测量机构测量的翘曲量之间的差异，执行喷射机构的喷射处理条件的设定处理以及喷射机构的喷射处理条件的设定处理 已经进行了注射处理的基底。
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5.发明申请WARP CORRECTION DEVICE AND WARP CORRECTION METHOD FOR SEMICONDUCTOR ELEMENT SUBSTRATE 有权用于半导体元件基板的温度校正装置和温度校正方法公开(公告)号：US20140287538A1
公开(公告)日：2014-09-25
申请号：US14353895
申请日：2012-07-13
申请人： Kouichi Inoue , Kazuyoshi Maeda , Norihito Shibuya
发明人： Kouichi Inoue , Kazuyoshi Maeda , Norihito Shibuya
IPC分类号： H01L21/66 , H01J37/317 , H01L21/265
CPC分类号： H01L22/12 , H01J37/3171 , H01L21/26 , H01L21/265 , H01L21/67288 , H01L21/6838 , H01L22/20 , H01L22/26 , H01L33/0095 , H01L2924/0002 , H01L2924/00
摘要： A warp correction apparatus includes an injection mechanism including a nozzle that performs injection treatment, an adsorption table that holds the substrate by adsorption at a principal surface side or a film surface side, a moving mechanism that moves the adsorption table so that the substrate relatively moves with respect to an injection area of an injection particle by the nozzle, an injection treatment chamber that houses the substrate held on the adsorption table and in the interior of which injection treatment is performed, a measurement mechanism that measures a warp of the substrate, and a control device that, based on a difference between a target warp amount and a warp amount measured by the measurement mechanism, performs at least either one of a setting processing of an injection treatment condition of the injection mechanism and an accept/reject determination of the substrate for which injection treatment has been performed.
摘要翻译： 翘曲修正装置包括：注射机构，其包括执行注射处理的喷嘴;吸附台，其通过主表面侧或膜表面侧的吸附而保持基板;移动机构，其移动吸附台，使得基板相对移动 相对于喷嘴的注射粒子的注入面积，容纳保持在吸附台上的衬底和进行注射处理的内部的注射处理室，测量衬底的翘曲的测量机构，以及 控制装置，其基于目标翘曲量与通过测量机构测量的翘曲量之间的差异，执行喷射机构的喷射处理条件的设定处理以及喷射机构的喷射处理条件的设定处理 已经进行了注射处理的基底。
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公开(公告)号：USD636845S1
公开(公告)日：2011-04-26
申请号：US29366354
申请日：2010-07-23
申请人： Yukinori Suzuki , Norihito Shibuya
设计人： Yukinori Suzuki , Norihito Shibuya
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公开(公告)号：US09114503B2
公开(公告)日：2015-08-25
申请号：US12937128
申请日：2009-04-10
申请人： Mikitoshi Hiraga , Ryoichi Tsunoda , Kenichiro Inagaki , Kazuyoshi Maeda , Yukinori Suzuki , Norihito Shibuya
发明人： Mikitoshi Hiraga , Ryoichi Tsunoda , Kenichiro Inagaki , Kazuyoshi Maeda , Yukinori Suzuki , Norihito Shibuya
摘要： A nozzle, a nozzle unit having a plurality of nozzles, and a blasting machine equipped with the nozzle unit, which can achieve a micro-machining with a high precision and a high productivity for the blasting process. A portion for escape 13c is formed at the distal end of the ejecting portion 13 of the nozzle 11, so if the distance between the surface of the work and the nozzle 11 is shortened to suppress the broadening of the flow of the abrasives, the reflected abrasives do not remain within the space between the surface of the work and the distal end of the ejecting portion 13. Thus, a blasting process with a high precision can be achieved. Further, since two nozzles 11m and 11n can be arranged so as to correspond to the width of the surface of the work to be processed by a rotational device 16, it is possible to blast a wider area of the surface of the work while the nozzle unit 10 or the blasting machine 20 sweep one time. Thus, the high productivity of the blasting process can be achieved.
摘要翻译： 喷嘴，具有多个喷嘴的喷嘴单元和配备有喷嘴单元的喷砂机，其可以以高精度和高生产率实现喷砂处理的微加工。 在喷嘴11的喷射部分13的远端处形成有用于逃逸部分13c的部分，因此如果工件的表面与喷嘴11之间的距离缩短以抑制磨料的流动的扩大，则反射 研磨剂不会残留在工件的表面与喷射部13的前端之间的空间内。因此，可以实现高精度的喷砂处理。 此外，由于可以将两个喷嘴11m和11n布置成与旋转装置16的待加工的工件的表面的宽度相对应，所以可以在喷嘴的表面喷射更宽的区域 单元10或喷砂机20扫一次。 因此，可以实现爆破过程的高生产率。
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公开(公告)号：USD637267S1
公开(公告)日：2011-05-03
申请号：US29366353
申请日：2010-07-23
申请人： Yukinori Suzuki , Norihito Shibuya
设计人： Yukinori Suzuki , Norihito Shibuya
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