摘要:
The present invention provides an apparatus for removing the unnecessary thin-film layer on the periphery of the substrate of the plate-like member having a square shape, on the surface of which substrate is formed a thin-film layer. The apparatus comprises a chamber to treat the peripheral part where the peripheral part of the plate-like member is inserted and where the unnecessary thin-film layer on the peripheral part of the plate-like member is removed; and a means to move the plate-like member. The chamber to treat the peripheral part comprises a cover to prevent the scattering of the sprayed particles and the dust for treating the peripheral part, the cover having one of its end-sides that forms a ceiling being closed and having the other end-side that is opposed to the ceiling being open and a suctioning cover for treating the peripheral part, having an opening that has the same shape as the opening of the cover to prevent the scattering of the dust. In the chamber to treat the peripheral part, a blasting nozzle for spraying particles for treating the peripheral part is disposed on the cover to prevent the scattering of the dust, so that the mouth of the blasting nozzle is covered by the wall of the cover to prevent the scattering of the sprayed particles and the dust.
摘要:
The present invention provides an apparatus for removing the unnecessary thin-film layer on the periphery of the substrate of the plate-like member having a square shape, on the surface of which substrate is formed a thin-film layer. The apparatus comprises a chamber to treat the peripheral part where the peripheral part of the plate-like member is inserted and where the unnecessary thin-film layer on the peripheral part of the plate-like member is removed; and a means to move the plate-like member. The chamber to treat the peripheral part comprises a cover to prevent the scattering of the sprayed particles and the dust for treating the peripheral part, the cover having one of its end-sides that forms a ceiling being closed and having the other end-side that is opposed to the ceiling being open and a suctioning cover for treating the peripheral part, having an opening that has the same shape as the opening of the cover to prevent the scattering of the dust. In the chamber to treat the peripheral part, a blasting nozzle for spraying particles for treating the peripheral part is disposed on the cover to prevent the scattering of the dust, so that the mouth of the blasting nozzle is covered by the wall of the cover to prevent the scattering of the sprayed particles and the dust.
摘要:
A nozzle, a nozzle unit having a plurality of nozzles, and a blasting machine equipped with the nozzle unit, which can achieve a micro-machining with a high precision and a high productivity for the blasting process, are provided.Since the portion for escape 13c is formed at the distal end of the ejecting portion 13, if the distance between the surface of the work and the nozzle 11 is shortened to suppress the broadening of the flow of the abrasives, the reflected abrasives do not remain within the space between the surface of the work and the distal end of the ejecting portion 13. Thus, the blasting process with a high precision can be achieved. Further, since the nozzle 11m and the nozzle 11n can be arranged so as to correspond to the width of the surface of the work to be processed by the rotational device 16, it is possible to blast a wider area of the surface of the work while the nozzle unit 10 or the blasting machine 20 sweep one time. Thus, the high productivity of the blasting process can be achieved.
摘要:
A nozzle, a nozzle unit having a plurality of nozzles, and a blasting machine equipped with the nozzle unit, which can achieve a micro-machining with a high precision and a high productivity for the blasting process. A portion for escape 13c is formed at the distal end of the ejecting portion 13 of the nozzle 11, so if the distance between the surface of the work and the nozzle 11 is shortened to suppress the broadening of the flow of the abrasives, the reflected abrasives do not remain within the space between the surface of the work and the distal end of the ejecting portion 13. Thus, a blasting process with a high precision can be achieved. Further, since two nozzles 11m and 11n can be arranged so as to correspond to the width of the surface of the work to be processed by a rotational device 16, it is possible to blast a wider area of the surface of the work while the nozzle unit 10 or the blasting machine 20 sweep one time. Thus, the high productivity of the blasting process can be achieved.
摘要:
A warp correction apparatus includes an injection mechanism including a nozzle that performs injection treatment, an adsorption table that holds the substrate by adsorption at a principal surface side or a film surface side, a moving mechanism that moves the adsorption table so that the substrate relatively moves with respect to an injection area of an injection particle by the nozzle, an injection treatment chamber that houses the substrate held on the adsorption table and in the interior of which injection treatment is performed, a measurement mechanism that measures a warp of the substrate, and a control device that, based on a difference between a target warp amount and a warp amount measured by the measurement mechanism, performs at least either one of a setting processing of an injection treatment condition of the injection mechanism and an accept/reject determination of the substrate for which injection treatment has been performed.
摘要:
A warp correction apparatus includes an injection mechanism including a nozzle that performs injection treatment, an adsorption table that holds the substrate by adsorption at a principal surface side or a film surface side, a moving mechanism that moves the adsorption table so that the substrate relatively moves with respect to an injection area of an injection particle by the nozzle, an injection treatment chamber that houses the substrate held on the adsorption table and in the interior of which injection treatment is performed, a measurement mechanism that measures a warp of the substrate, and a control device that, based on a difference between a target warp amount and a warp amount measured by the measurement mechanism, performs at least either one of a setting processing of an injection treatment condition of the injection mechanism and an accept/reject determination of the substrate for which injection treatment has been performed.