公开(公告)号：US08513036B2

公开(公告)日：2013-08-20

申请号：US13524256

申请日：2012-06-15

申请人： O Dae Kwon ,  Mi-Hyang Shin ,  Seung Eun Lee ,  Young-Heub Jang ,  Young Chun Kim ,  Junho Yoon

发明人： O Dae Kwon ,  Mi-Hyang Shin ,  Seung Eun Lee ,  Young-Heub Jang ,  Young Chun Kim ,  Junho Yoon

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/1075 ,  H01S5/1092 ,  H01S5/2027 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2275 ,  H01S2304/04 ,  H04N9/315

摘要： A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active layer, and upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.

摘要翻译： 光子量子环（PQR）激光器包括具有多量子阱（MQW）结构和蚀刻的侧面的有源层。 有源层形成为夹在p-GaN和外延生长在设置在支撑衬底上的反射器上的n-GaN层之间。 在有源层的侧面的外侧形成涂层，上部电极与n-GaN层的上部电连接，在n-GaN层上形成分布式布拉格反射体（DBR） 和上电极。 因此，PQR激光器能够振荡适用于低功率显示装置的省电垂直显示3D多模激光器，防止光斑现象，并产生聚焦调整的3D软光。

公开(公告)号：US20100265977A1

公开(公告)日：2010-10-21

申请号：US12743025

申请日：2008-10-16

申请人： O Dae Kwon ,  Mi-Hyang Shin ,  Seung Eun Lee ,  Young-Heub Jang ,  Young Chun Kim ,  Junho Yoon

发明人： O Dae Kwon ,  Mi-Hyang Shin ,  Seung Eun Lee ,  Young-Heub Jang ,  Young Chun Kim ,  Junho Yoon

IPC分类号： H01S5/343 ,  H01L33/00 ,  H01S5/34

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/1075 ,  H01S5/1092 ,  H01S5/2027 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2275 ,  H01S2304/04 ,  H04N9/315

摘要： A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwitched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active layer, an upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.

摘要翻译： 光子量子环（PQR）激光器包括具有多量子阱（MQW）结构和蚀刻的侧面的有源层。 有源层被形成为在设置在支撑衬底上的反射器上外延生长的p-GaN和n-GaN层之间进行开槽。 在有源层的侧面的外侧形成有涂层，上部电极与n-GaN层的上部电连接，在n-GaN层上形成分布式布拉格反射体（DBR） 和上电极。 因此，PQR激光器能够振荡适用于低功率显示装置的省电垂直显示3D多模激光器，防止光斑现象，并产生聚焦调整的3D软光。

公开(公告)号：US20100315478A1

公开(公告)日：2010-12-16

申请号：US12656362

申请日：2010-01-27

申请人： An-sik Choi ,  O-dae Kwon ,  Jae-hwan Yoo ,  Young-chun Kim ,  Kwang-hyun Chae ,  Cheng-hoon Kim ,  Mi-hyang Shin

发明人： An-sik Choi ,  O-dae Kwon ,  Jae-hwan Yoo ,  Young-chun Kim ,  Kwang-hyun Chae ,  Cheng-hoon Kim ,  Mi-hyang Shin

IPC分类号： B41J2/47 ,  H01S5/125

CPC分类号： H01S5/1835 ,  B41J2/45 ,  H01S5/1075 ,  H01S5/18319 ,  H01S5/2027 ,  H01S5/423 ,  H01S2301/18

摘要： Provided are a semiconductor laser diode, and a printhead and an image forming apparatus including the semiconductor laser diode. The semiconductor laser diode includes a concave-convex pattern, and emits light having a Gaussian light intensity distribution. High quality images are provided by applying the semiconductor laser diode to a printhead and an image forming apparatus.

摘要翻译： 提供半导体激光二极管，以及包括半导体激光二极管的打印头和图像形成装置。 半导体激光二极管包括凹凸图案，并且发射具有高斯光强度分布的光。 通过将半导体激光二极管应用于打印头和图像形成装置来提供高质量的图像。

公开(公告)号：US20120252146A1

公开(公告)日：2012-10-04

申请号：US13524256

申请日：2012-06-15

申请人： O Dae KWON ,  Mi-hyang SHIN ,  Seung Eun LEE ,  Young-heub JANG ,  Young Chun KIM ,  Junho YOON

发明人： O Dae KWON ,  Mi-hyang SHIN ,  Seung Eun LEE ,  Young-heub JANG ,  Young Chun KIM ,  Junho YOON

IPC分类号： H01L21/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/1075 ,  H01S5/1092 ,  H01S5/2027 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2275 ,  H01S2304/04 ,  H04N9/315

摘要： A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active alyer, and upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.

摘要翻译： 光子量子环（PQR）激光器包括具有多量子阱（MQW）结构和蚀刻的侧面的有源层。 有源层形成为夹在p-GaN和外延生长在设置在支撑衬底上的反射器上的n-GaN层之间。 在活性聚合物的侧面的外侧形成有涂层，上部电极与n-GaN层的上部电连接，在n-GaN层上形成分布式布拉格反射体（DBR） 和上电极。 因此，PQR激光器能够振荡适用于低功率显示装置的省电垂直显示3D多模激光器，防止光斑现象，并产生聚焦调整的3D软光。