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    THERMAL EMISSION SOURCE AND TWO-DIMENSIONAL PHOTONIC CRYSTAL FOR USE IN THE SAME EMISSION SOURCE
    4.
    发明申请
    THERMAL EMISSION SOURCE AND TWO-DIMENSIONAL PHOTONIC CRYSTAL FOR USE IN THE SAME EMISSION SOURCE 有权
    热发射源和二维光子晶体用于相同的发射源

    公开(公告)号：US20170077675A1

    公开(公告)日：2017-03-16

    申请号：US15120254

    申请日：2015-02-24

    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

    Inventor： Susumu NODA ,  Takuya INOUE ,  Takashi ASANO ,  Menaka DE ZOYSA

    IPC: H01S5/10 ,  H01S5/024 ,  H01S5/02 ,  H01S5/34 ,  H01S5/042

    CPC classification number: H01S5/18319 ,  H01S5/0014 ,  H01S5/0207 ,  H01S5/02453 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/0428 ,  H01S5/105 ,  H01S5/18316 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3402 ,  H01S5/3419 ,  H01S2302/02

    Abstract: A thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element. A thermal emission source includes: a two-dimensional photonic crystal including a slab in which an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes) whose refractive index differs from the refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer; and a p-type electrode and an n-type electrode for applying, to the slab, a voltage which is negative on the side of the p-layer and positive on the side of the n-layer.

    Abstract translation: 与光电转换元件类似的能够以高响应速度切换光的强度的热发射源。 热发射源包括：二维光子晶体，其包括其中由n型半导体制成的n层，具有量子阱结构的量子阱结构层和由p-型半导体制成的p层的板， 类型半导体沿厚度方向以上述顺序堆叠，其折射率与n层，p层和量子阱结构层的折射率不同的改性折射率区域（空气孔）循环地布置在 以便与量子阱结构层中的量子阱中的子带之间的跃变能相对应的特定波长的光谐振; 以及p型电极和n型电极，用于向所述板施加在所述p层侧为负的电压，并且在所述n层的一侧为正。

    SEMICONDUCTOR OPTICAL ELEMENT AND SURFACE-EMITTING SEMICONDUCTOR OPTICAL ELEMENT
    7.
    发明申请
    SEMICONDUCTOR OPTICAL ELEMENT AND SURFACE-EMITTING SEMICONDUCTOR OPTICAL ELEMENT 有权
    半导体光学元件和表面发射半导体光学元件

    公开(公告)号：US20160156154A1

    公开(公告)日：2016-06-02

    申请号：US14799087

    申请日：2015-07-14

    Applicant: Mitsubishi Electric Corporation

    Inventor： Ayumi FUCHIDA ,  Naoki NAKAMURA

    IPC: H01S5/187 ,  H01S5/30

    CPC classification number: H01S5/12 ,  H01S3/0675 ,  H01S3/1055 ,  H01S5/1231 ,  H01S5/18319 ,  H01S5/20

    Abstract: A semiconductor optical element has a semiconductor substrate, a diffraction grating, a diffraction grating embedding layer, an active layer and a cladding layer. The diffraction grating includes a plurality of grating elements arranged on the semiconductor substrate along a direction (Z direction) in which laser light is emitted. Each grating element has a lower portion and an upper portion provided on the lower portion. The lower portions of the grating elements are connected to each other to form one layer in a lower section of the diffraction grating. The upper portion has a first refractive index and the lower portion has a second refractive index. A refractive index of the diffraction grating embedding layer is an intermediate value between the first and the second refractive index.

    Abstract translation: 半导体光学元件具有半导体基板，衍射光栅，衍射光栅嵌入层，有源层和包层。 衍射光栅包括沿着发射激光的方向（Z方向）布置在半导体衬底上的多个光栅元件。 每个光栅元件具有设置在下部的下部和上部。 光栅元件的下部彼此连接，以在衍射光栅的下部形成一层。 上部具有第一折射率，下部具有第二折射率。 衍射光栅埋入层的折射率是第一和第二折射率之间的中间值。

    Laser device
    8.
    发明授权
    Laser device 有权
    激光设备

    公开(公告)号：US08948223B2

    公开(公告)日：2015-02-03

    申请号：US14123686

    申请日：2012-07-02

    Applicant: Il-Sug Chung

    Inventor： Il-Sug Chung

    IPC: H01S3/00 ,  H01S5/187 ,  H01S5/02 ,  H01S5/026 ,  H01S5/183 ,  H01S5/042 ,  H01S5/062 ,  H01S5/12 ,  H01S5/10

    CPC classification number: H01S5/187 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/026 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/1032 ,  H01S5/1228 ,  H01S5/1234 ,  H01S5/18311 ,  H01S5/18319 ,  H01S5/1838 ,  H01S5/18386

    Abstract: The present invention provides a light source for light circuits on a silicon platform. A vertical laser cavity is formed by a gain region arranged between a first mirror structure and a second mirror structure, both acting as mirrors, by forming a grating region including an active material in a silicon layer in a semiconductor structure or wafer structure. A waveguide for receiving light from the region of the mirrors is formed within or to be connected to the region of the mirrors, and functions as an output coupler for the VCL. Thereby, vertical lasing modes are coupled to lateral in-plane modes of the in-plane waveguide formed in the silicon layer, and light can be provided to e.g. photonic circuits on a SOI or CMOS substrate in the silicon.

    Abstract translation: 本发明提供一种用于硅平台上的光电路的光源。 通过在半导体结构或晶片结构中的硅层中形成包括活性材料的光栅区域，通过布置在第一反射镜结构和第二反射镜结构之间的增益区域两者形成垂直激光腔。 用于从反射镜区域接收光的波导形成在反射镜的区域内或连接到反射镜的区域，并且用作VCL的输出耦合器。 因此，垂直激光模式耦合到在硅层中形成的面内波导的横向面内模式，并且可以提供光。 在硅中的SOI或CMOS衬底上的光子电路。

    Planar, high NA, low loss transmitting or reflecting lenses using sub-wavelength high contrast grating
    10.
    发明授权
    Planar, high NA, low loss transmitting or reflecting lenses using sub-wavelength high contrast grating 有权
    平面，高NA，低损耗透射或反射透镜使用亚波长高对比度光栅

    公开(公告)号：US08755118B2

    公开(公告)日：2014-06-17

    申请号：US13593382

    申请日：2012-08-23

    Applicant: Connie Chang-Hasnain ,  Christopher Chase ,  Fanglu Lu ,  Forrest G. Sedgwick ,  Igor Karagodsky

    Inventor： Connie Chang-Hasnain ,  Christopher Chase ,  Fanglu Lu ,  Forrest G. Sedgwick ,  Vadim Karagodsky

    IPC: G02B5/18

    CPC classification number: G02B5/1861 ,  B82Y20/00 ,  G02B3/0006 ,  G02B5/1809 ,  G02B5/1876 ,  G02B6/1223 ,  G02B6/124 ,  G02B21/32 ,  G02B2006/12107 ,  H01S5/18319 ,  H01S5/18355 ,  H01S5/18386 ,  H01S5/18388

    Abstract: Planar lenses and reflectors are described comprising subwavelength high-contrast gratings (HCG) having high index of refraction grating elements spaced apart from one another in straight and/or curved segments and surrounded by low index material. The high-contrast grating is configured to receive an incident wave which excites multiple modes within the high-contrast grating and is focused for reflection and/or transmission by said high contrast grating. The width of the high contrast grating bars vary along a distribution direction of the grating bars which is perpendicular to the length of the grating bars and/or varies along the length of one or more grating bars to focus said reflection and/or transmission. The HCG is configured to provide double focusing, whose use is exemplified within a vertical cavity surface emitting laser (VCSEL) structure using focusing HCG structures for both the top and bottom mirrors.

    Abstract translation: 描述了平面透镜和反射器，其包括具有高折射率光栅元件的亚波长高对比度光栅（HCG），其在直的和/或弯曲的部分彼此间隔开并被低折射率材料包围。 高对比度光栅被配置为接收在高对比度光栅内激发多个模式的入射波，并被聚焦用于所述高对比度光栅的反射和/或透射。 高对比度光栅的宽度沿着光栅条的分布方向变化，该方向垂直于光栅条的长度和/或沿着一个或多个光栅条的长度变化以聚焦所述反射和/或透射。 HCG被配置为提供双重聚焦，其使用在使用用于顶部和底部反射镜的聚焦HCG结构的垂直腔表面发射激光器（VCSEL）结构中举例说明。

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