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    Photonic quantum ring laser and fabrication method thereof
    1.
    发明授权
    Photonic quantum ring laser and fabrication method thereof 失效
    光子量子环激光器及其制造方法

    公开(公告)号：US08513036B2

    公开(公告)日：2013-08-20

    申请号：US13524256

    申请日：2012-06-15

    申请人： O Dae Kwon ,  Mi-Hyang Shin ,  Seung Eun Lee ,  Young-Heub Jang ,  Young Chun Kim ,  Junho Yoon

    发明人： O Dae Kwon ,  Mi-Hyang Shin ,  Seung Eun Lee ,  Young-Heub Jang ,  Young Chun Kim ,  Junho Yoon

    IPC分类号： H01L21/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/1075 ,  H01S5/1092 ,  H01S5/2027 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2275 ,  H01S2304/04 ,  H04N9/315

    摘要： A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active layer, and upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.

    摘要翻译： 光子量子环（PQR）激光器包括具有多量子阱（MQW）结构和蚀刻的侧面的有源层。 有源层形成为夹在p-GaN和外延生长在设置在支撑衬底上的反射器上的n-GaN层之间。 在有源层的侧面的外侧形成涂层，上部电极与n-GaN层的上部电连接，在n-GaN层上形成分布式布拉格反射体（DBR） 和上电极。 因此，PQR激光器能够振荡适用于低功率显示装置的省电垂直显示3D多模激光器，防止光斑现象，并产生聚焦调整的3D软光。

    PHOTONIC QUANTUM RING LASER AND FABRICATION METHOD THEREOF
    6.
    发明申请
    PHOTONIC QUANTUM RING LASER AND FABRICATION METHOD THEREOF 失效
    光子量子激光器及其制造方法

    公开(公告)号：US20120252146A1

    公开(公告)日：2012-10-04

    申请号：US13524256

    申请日：2012-06-15

    申请人： O Dae KWON ,  Mi-hyang SHIN ,  Seung Eun LEE ,  Young-heub JANG ,  Young Chun KIM ,  Junho YOON

    发明人： O Dae KWON ,  Mi-hyang SHIN ,  Seung Eun LEE ,  Young-heub JANG ,  Young Chun KIM ,  Junho YOON

    IPC分类号： H01L21/20

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/1075 ,  H01S5/1092 ,  H01S5/2027 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2275 ,  H01S2304/04 ,  H04N9/315

    摘要： A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active alyer, and upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.

    摘要翻译： 光子量子环（PQR）激光器包括具有多量子阱（MQW）结构和蚀刻的侧面的有源层。 有源层形成为夹在p-GaN和外延生长在设置在支撑衬底上的反射器上的n-GaN层之间。 在活性聚合物的侧面的外侧形成有涂层，上部电极与n-GaN层的上部电连接，在n-GaN层上形成分布式布拉格反射体（DBR） 和上电极。 因此，PQR激光器能够振荡适用于低功率显示装置的省电垂直显示3D多模激光器，防止光斑现象，并产生聚焦调整的3D软光。

    PHOTONIC QUANTUM RING LASER AND FABRICATION METHOD THEREOF
    8.
    发明申请
    PHOTONIC QUANTUM RING LASER AND FABRICATION METHOD THEREOF 审中-公开
    光子量子激光器及其制造方法

    公开(公告)号：US20100265977A1

    公开(公告)日：2010-10-21

    申请号：US12743025

    申请日：2008-10-16

    申请人： O Dae Kwon ,  Mi-Hyang Shin ,  Seung Eun Lee ,  Young-Heub Jang ,  Young Chun Kim ,  Junho Yoon

    发明人： O Dae Kwon ,  Mi-Hyang Shin ,  Seung Eun Lee ,  Young-Heub Jang ,  Young Chun Kim ,  Junho Yoon

    IPC分类号： H01S5/343 ,  H01L33/00 ,  H01S5/34

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/1075 ,  H01S5/1092 ,  H01S5/2027 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2275 ,  H01S2304/04 ,  H04N9/315

    摘要： A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwitched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active layer, an upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.

    摘要翻译： 光子量子环（PQR）激光器包括具有多量子阱（MQW）结构和蚀刻的侧面的有源层。 有源层被形成为在设置在支撑衬底上的反射器上外延生长的p-GaN和n-GaN层之间进行开槽。 在有源层的侧面的外侧形成有涂层，上部电极与n-GaN层的上部电连接，在n-GaN层上形成分布式布拉格反射体（DBR） 和上电极。 因此，PQR激光器能够振荡适用于低功率显示装置的省电垂直显示3D多模激光器，防止光斑现象，并产生聚焦调整的3D软光。