摘要:
A plurality of voltage generating circuits forming a voltage generator system on a chip are controlled by a centralized voltage generator control arrangement. The voltage generator control arrangement includes a controller with a state machine (52) that receives control signals from various devices on the chip as, for example, a clock generator, voltage detectors, bondpads, testpads, fuses, and predetermined registers. From the received signals, the controller generates control signals to the plurality of generating circuits of the voltage generator system and other circuits on the chip in accordance with a predetermined program sequence for each phase of operation required by the generating circuits to provide the necessary stable voltages to circuits on the chip.
摘要:
A method for reducing the current consumption of a reference voltage circuit while a synchronous DRAM is in standby power-down mode is provided. The reference voltage is stored on a capacitor within the DRAM circuit. The reference voltage circuit is selectively disconnected from, and reconnected to the Vref-node at predetermined time intervals during a power down mode, in order to ensure leakage compensation. When the power down mode exceeds a predetermined time, the reference voltage circuit is disabled to further reduce the current consumption.
摘要:
In memory systems embodying the invention a controller/sequencer circuit converts a multiplicity of control signals into a serial stream of control signals which are carried from the controller/sequencer circuit via a single ("data") line to the data input of a control path (e.g., a multi-stage shift register) which is disposed in proximity to a functions generator (e.g., a voltages generator). After the control path is serially loaded with a selected number of control signals, the control signals are selectively applied, in parallel, to the functions generator. Where the control path is a shift register, three control lines are routed from the controller/sequencer to the shift register. One line carries the serial control signals to the input of the shift register; one line (i.e., a shift line) carries shift signals for causing the transfer of the control signals along the shift register stages; and one line (i.e., a select line) is used to selectively transfer control signals accumulated in the shift register to the voltages generator.
摘要:
In a controller for controlling a generator system on a memory chip, the controller operates as a state machine in accordance with a state diagram including a plurality of N states. A state storage device is responsive to input signals from a transition arrangement including a 1-out-of-N code indicating a change in the state diagram from a current state to a next state of the plurality of N states. The state storage device generates a revised plurality of N state output signals comprising a true State signal and a complementary true State signal for the next state of the plurality of N states. The state storage device is also responsive to an asynchronous Reset signal received from an external source for generating a Reset and a complementary Set output signal. A state identification circuitry is responsive to a selectively applied activation signal for inhibiting the output of the revised plurality of N state signals from the state storage device and sequentially reading out the plurality of N state signals currently stored in the state storage device. The the 1-out-of N-code forming the plurality of N state signals are used to determine which state of the state diagram the controller is presently in when the controller fails to complete a procedure in the state diagram.
摘要:
A novel DRAM refresh method and system and a novel method of designing a low-power leakage monitoring device. With the DRAM refresh method, the time is adjusted based directly on the cell leakage condition. The method of designing a low-power leakage monitoring devices uses a memory cell identical to the cells in the real array. This monitor cell is designed so that it will represent the average cell or the worst cell leakage condition. If the leakage is severe, the refresh cycle time is significantly reduced, or halved. If the leakage level is very low or undetectable, then the refresh cycle time is significantly increased, or doubled. If the leakage is moderate, or in the normal range, the refresh time is optimized, so that the power consumption used for DRAM refresh is minimized. The advantages of this method over the existing method, that is, adjusting the refresh cycle time based on chip temperature include (1) the contributions from non-temperature dependent leakage factors are taken into consideration, (2) the present invention does not require different process steps, or extra process costs to integrate such device in the chip, and (3) the present invention is a straight forward method, the monitor cell does not need any calibration. In addition, its leakage mechanism and reliability concern are all identical to the cells in a real array.
摘要:
A charge pump generator system and method is provided which more precisely maintains the level of an internally generated voltage supply by operating some or all of the available charge pumps depending upon the voltage level reached by the voltage supply. When the voltage supply is far from its target level, a first group and a second group of charge pumps are operated. The first group may preferably have a faster pumping rate or a greater number of charge pumps than the second group. When the voltage supply exceeds a first predetermined level, the first group of charge pumps is switched off while the second group remains on, such that the rate of charge transfer slows. The second group continues operating until a second, e.g. target, voltage level is exceeded. The slower rate of charge transfer then effective reduces overshoot, ringing and noise coupled onto the voltage supply line. Preferably, at least one charge pump operates in both standby and active modes, thereby reducing chip area.
摘要:
In a controller for controlling a generator system on a memory chip, the controller operates as a state machine in accordance with a state diagram including a plurality of X states. A state storage device is responsive to input signals indicating a change in the state diagram from a current state to a next state for generating a revised plurality of X state output signals comprising a true State signal and a complementary true State signal for the next state of the plurality of X states. An output arrangement is responsive to the true State signal and the complementary true State signal in the revised plurality of X state output signals from the state storage device for generating separate predetermined ones of M output signals associated with said next state for controlling the generator system while providing substantially zero current consumption when the state diagram reaches a final state of the plurality of X states.
摘要:
A hearing aid has an input transducer, an amplifier and transmission circuit, an output transducer and a calculating unit working according to the principle of a neural structure. The calculating unit responds to a tap signal taken at the amplifier and transmission circuit and units an event signal that is supplied to the amplifier and transmission circuit and influences an output signal emitted thereby. At least the calculating unit is implemented in digital circuit technology. Such a hearing aid can be manufactured with little development and circuit outlay, works reliably and enables an optimum matching to the specific requirements of the hearing aid user.
摘要:
A hearing aid with a simplified and optimized control system has control functions that are entirely or partially implemented by a fuzzy logic controller in the amplifier and transmission part circuitry.
摘要:
A circuit for storing a bit of data is provided, where the circuit includes a first fuse having a first end and a second end and a second fuse having a third end and a fourth end. The first end of the first fuse is connected to a logic 0 input and its second end is connected to a common output. The third end of the second fuse is connected to a logic 1 input and the fourth end is connected to the common output. To store the bit of data, one of the first and second fuses is selectively blown. Hence, two fuses can be used to store a bit of information.