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    Method for growth of in situ p-type semiconductor films using a group V flux
    1.
    发明授权
    Method for growth of in situ p-type semiconductor films using a group V flux 失效
    使用V族通量生长原位p型半导体膜的方法

    公开(公告)号：US5976958A

    公开(公告)日：1999-11-02

    申请号：US965390

    申请日：1997-11-06

    申请人： Rajesh D. Rajavel ,  Owen K. Wu ,  Peter D. Brewer ,  Terence J. deLyon

    发明人： Rajesh D. Rajavel ,  Owen K. Wu ,  Peter D. Brewer ,  Terence J. deLyon

    IPC分类号： C30B23/02 ,  H01L21/363 ,  H01L21/20

    CPC分类号： C30B23/02 ,  C30B29/48 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/02579 ,  H01L21/02631

    摘要： A method of growing a p-type doped Group II-VI semiconductor film includes the steps of forming a lattice comprising a Group II material and a Group VI material and generating a first Group V flux by evaporating a solid Group V source material. The first Group V flux is then decomposed to generate a second Group V flux, which is, in turn, provided to the lattice to p-type dope the growing film. The Group V source material may by arsenic such that the second Group V flux may predominantly include dimeric arsenic decomposed from tetrameric arsenic to improve the incorporation of arsenic into the Group VI sublattice of the lattice.

    摘要翻译： 生长p型掺杂的II-VI族半导体膜的方法包括以下步骤：形成包含II族材料和VI族材料的晶格，并通过蒸发固体V族源材料产生第一V族熔剂。 然后第一组V磁通被分解以产生第二组V磁通，其又提供给p型掺杂生长膜的晶格。 V族源材料可以通过砷使得第二V族通量主要包括从四聚砷分解的二聚砷，以改善砷掺入到晶格的第VI族亚晶格中。

    Layered radiation-sensitive materials with varying sensitivity
    3.
    发明授权
    Layered radiation-sensitive materials with varying sensitivity 有权
    具有不同灵敏度的分层辐射敏感材料

    公开(公告)号：US08906597B2

    公开(公告)日：2014-12-09

    申请号：US12339308

    申请日：2008-12-19

    申请人： Jeffrey A. Rock ,  Gerald W. Fly ,  Yeh-Hung Lai ,  Keith E. Newman ,  Alan J. Jacobsen ,  William B. Carter ,  Peter D. Brewer

    发明人： Jeffrey A. Rock ,  Gerald W. Fly ,  Yeh-Hung Lai ,  Keith E. Newman ,  Alan J. Jacobsen ,  William B. Carter ,  Peter D. Brewer

    IPC分类号： G03F7/26 ,  G03F7/095 ,  G03F7/20

    CPC分类号： G03F7/20 ,  G03F7/095 ,  G03F7/2022

    摘要： A method for fabricating a radiation-cured structure is provided. The method includes the steps of providing a first radiation-sensitive material and applying a second radiation-sensitive material to the first radiation-sensitive material. The first radiation-sensitive material has a first sensitivity. The second radiation-sensitive material has a second sensitivity different from the first sensitivity. At least one mask is placed between at least one radiation source and the first and second radiation-sensitive materials. The mask has a plurality of substantially radiation-transparent apertures. The first and second radiation-sensitive materials are then exposed to a plurality of radiation beams through the radiation-transparent apertures in the mask to form a first construct in the first radiation-sensitive material and a second construct in the second radiation-sensitive material. The first construct and the second construct cooperate to form the radiation-cured structure.

    摘要翻译： 提供了一种制造辐射固化结构的方法。 该方法包括提供第一辐射敏感材料并将第二辐射敏感材料施加到第一辐射敏感材料的步骤。 第一种辐射敏感材料具有第一敏感性。 第二辐射敏感材料具有与第一灵敏度不同的第二灵敏度。 至少一个掩模被放置在至少一个辐射源与第一和第二辐射敏感材料之间。 掩模具有多个基本上辐射透明的孔。 然后将第一和第二辐射敏感材料暴露于通过掩模中的辐射透明孔的多个辐射束，以在第一辐射敏感材料中形成第一构造体，并在第二辐射敏感材料中形成第二构造体。 第一构造和第二构造协作形成辐射固化结构。

    Heterogeneous integrated circuits and devices thereof with a surrogate substrate and transferred semiconductor devices
    8.
    发明授权
    Heterogeneous integrated circuits and devices thereof with a surrogate substrate and transferred semiconductor devices 有权
    异质集成电路及其装置具有替代衬底和转移的半导体器件

    公开(公告)号：US09524872B1

    公开(公告)日：2016-12-20

    申请号：US13096780

    申请日：2011-04-28

    申请人： Peter D. Brewer ,  Andrew T. Hunter ,  Yakov Royter

    发明人： Peter D. Brewer ,  Andrew T. Hunter ,  Yakov Royter

    IPC分类号： H01L21/30 ,  H01L21/18

    CPC分类号： H01L21/185 ,  H01L21/18 ,  H01L21/187 ,  H01L21/76251 ,  H01L21/76264 ,  H01L21/82 ,  H01L21/8258

    摘要： A heterogeneous integrated circuit and method of making the same. An integrated circuit includes a surrogate substrate including a material selected from the group consisting of Group II, Group III, Group IV, Group V, and Group VI materials and their combinations; at least one active semiconductor device including a material combination selected from the group consisting of Group IV-IV, Group III-V and Group II-VI materials; and at least one transferred semiconductor device including a material combination selected from the group consisting of Group IV-IV, Group III-V and Group II-VI materials. The at least one active semiconductor device and the at least one transferred device are interconnected.

    摘要翻译： 异构集成电路及其制作方法。 集成电路包括包括选自由组II，组III，组IV，组V和组VI材料及其组合组成的组的材料的替代衬底; 至少一个活性半导体器件，其包括选自由IV-IV族，III-V族和II-VI族组成的组的材料组合; 以及至少一个转移的半导体器件，其包括选自由IV-IV族，III-V族和II-VI族组成的组的材料组合。 所述至少一个有源半导体器件和所述至少一个转移器件互连。

    Polymer-infused carbon nanotube array and method
    10.
    发明授权
    Polymer-infused carbon nanotube array and method 失效
    聚合物注入碳纳米管阵列及方法

    公开(公告)号：US08435606B1

    公开(公告)日：2013-05-07

    申请号：US13033223

    申请日：2011-02-23

    申请人： Peter D. Brewer

    发明人： Peter D. Brewer

    IPC分类号： C23C16/00 ,  B05D1/18

    CPC分类号： H01L23/373 ,  B82Y30/00 ,  C08F2/44 ,  C08J5/005 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A polymer-infused carbon nanotube (CNT) composite material and method of fabricating the same. A CNT array is provided on a substrate. A capping layer is deposited on the CNT array such that the CNT array is between the capping layer and the substrate. A polymer material is infused into the CNT array. Then the substrate and the capping layer are removed. The array of carbon nanotubes included in the polymer-infused CNT composite material are substantially aligned in the same direction.

    摘要翻译： 聚合物注入碳纳米管（CNT）复合材料及其制造方法。 在基板上设置CNT阵列。 覆盖层沉积在CNT阵列上，使得CNT阵列位于覆盖层和基底之间。 将聚合物材料注入到CNT阵列中。 然后去除衬底和覆盖层。 包含在聚合物注入的CNT复合材料中的碳纳米管阵列基本上沿相同的方向排列。