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    Buried junction infrared photodetector process
    3.
    发明授权
    Buried junction infrared photodetector process 失效
    埋地红外光电探测器工艺

    公开(公告)号：US4956304A

    公开(公告)日：1990-09-11

    申请号：US178680

    申请日：1988-04-07

    Applicant: Charles A. Cockrum ,  Jeffrey B. Barton ,  Eric F. Schulte

    Inventor： Charles A. Cockrum ,  Jeffrey B. Barton ,  Eric F. Schulte

    IPC: H01L31/10 ,  H01L21/314 ,  H01L27/144 ,  H01L31/0216 ,  H01L31/103 ,  H01L31/18

    CPC classification number: H01L27/1446 ,  H01L31/02161 ,  H01L31/1032 ,  H01L31/1832

    Abstract: An array of photodiodes is comprised of a Group II-VI material, such as HgCdTe, which is processed to form a plurality of diode junctions. The array is fabricated by a method which comprises a first step of providing a radiation absorbing base 12 of p-type Hg.sub.(1-x) Cd.sub.x Te material. Each of the photodiodes is fabricated by depositing a layer 18 of wider bandgap passivation material over the substrate, depositing a photomask layer 26 over the passivation layer and selectively removing the passivation layer through openings within the photomask layer. One method of removing the passivation layer 18 is by ion milling which also converts the underlying p-type substrate material to n-type material. The lattice damage caused by the ion milling extends laterally outward such that the n-type region 14, and associated p-n diode junction 16, is disposed beneath the passivation layer 18. Alternatively, the substrate material is converted to an opposite type of conductivity by depositing a layer of source material followed by a diffusion process.

    Abstract translation: 一组光电二极管由II-VI族材料组成，例如HgCdTe，其被处理以形成多个二极管结。 该阵列通过包括提供p型Hg（1-x）CdxTe材料的辐射吸收基底12的第一步骤的方法制造。 通过在衬底上沉积更宽带隙钝化材料的层18来制造每个光电二极管，在光敏掩模层上通过开孔沉积光掩模层26并选择性地去除钝化层。 去除钝化层18的一种方法是通过离子研磨，其也将下面的p型衬底材料转换成n型材料。 由离子铣削引起的晶格损伤横向向外延伸，使得n型区域14和相关联的pn二极管接头16设置在钝化层18的下方。或者，通过沉积将衬底材料转换成相反类型的导电性 一层源材料，然后是扩散过程。

    Denuded zone field effect photoconductive detector
    7.
    发明授权
    Denuded zone field effect photoconductive detector 失效
    剥离区域效应光电导检测器

    公开(公告)号：US5466953A

    公开(公告)日：1995-11-14

    申请号：US070072

    申请日：1993-05-28

    Applicant: Joseph P. Rosbeck ,  Charles A. Cockrum

    Inventor： Joseph P. Rosbeck ,  Charles A. Cockrum

    IPC: H01L31/103 ,  H01L27/14 ,  H01L31/00

    CPC classification number: H01L31/1032

    Abstract: A compositionally graded HgCdTe radiation detector (10) is constructed to have a high purity "denuded zone" (Region 2) that is formed adjacent to a radiation absorbing region (Region 1). The compositional grading results in an internally generated electric field that is orthogonally disposed with respect to an externally generated electric field applied between contacts (16, 18). The internally generated electric field has the effect of injecting photogenerated minority charge carriers into the denuded zone, thereby reducing recombination with photogenerated majority charge carriers and increasing carrier lifetime. The detector further includes a wider bandgap surface passivation region (Region 3) that functions to trap, or "getter", impurities from the denuded zone and also to reduce surface recombination effects.

    Abstract translation: 组成分级的HgCdTe辐射检测器（10）被构造成具有与辐射吸收区域（区域1）相邻形成的高纯度“裸露区域”（区域2）。 组成分级导致相对于施加在触点（16,18）之间的外部产生的电场正交地布置的内部产生的电场。 内部产生的电场具有将光生少数电荷载体注入裸露区域的作用，从而减少与光生多数电荷载流子的复合并增加载体寿命。 检测器还包括更宽的带隙表面钝化区域（区域3），其功能是从去污区域捕获或“吸气”杂质，并且还减少表面复合效应。

    Heterojunction photodiode array
    8.
    发明授权
    Heterojunction photodiode array 失效
    异质结光电二极管阵列

    公开(公告)号：US4961098A

    公开(公告)日：1990-10-02

    申请号：US375229

    申请日：1989-07-03

    Applicant: Joseph P. Rosbeck ,  Charles A. Cockrum

    Inventor： Joseph P. Rosbeck ,  Charles A. Cockrum

    IPC: H01L31/10 ,  H01L27/14 ,  H01L27/144 ,  H01L31/0296 ,  H01L31/109

    CPC classification number: H01L31/02966 ,  H01L27/1446 ,  H01L31/109

    Abstract: An array of photovoltaic radiation detectors and a method of fabricating same. The array 10 includes a substrate 12 substantially transparent to radiation having wavelengths of interest and a radiation absorbing base layer 14 having a first surface 14a overlying a surface of the substrate for admitting incident radiation into the base layer. The base layer is comprised of a compositionally graded p-type Hg.sub.1-x Cd.sub.x Te material wherein x equals approximately 0.6 to approximately 0.8 at the first surface and equals less than approximately 0.4 at a second surface 14b. A cap layer 16 overlies the second surface of the radiation absorbing base layer, the cap layer also being compositionally graded. The cap layer has a bandgap that increases in width as a function of distance from the second surface of the base layer. The array further includes a plurality of regions 18 formed through the top surface of and substantially wholly within the wide bandgap cap layer, each of the regions forming a p-n junction 18a with the underlying material of the cap layer for collecting charge carriers. A plurality of channels 22 prevent lateral diffusion of charge carriers through the base layer.

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