公开(公告)号：US07292381B1

公开(公告)日：2007-11-06

申请号：US11223872

申请日：2005-09-08

申请人： Pamela Patterson ,  Andy Hunter ,  Angela Shum ,  Peter David Brewer

发明人： Pamela Patterson ,  Andy Hunter ,  Angela Shum ,  Peter David Brewer

IPC分类号： G02F1/03 ,  H01L23/34

CPC分类号： H01L23/4985 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/5389 ,  H01L24/82 ,  H01L25/065 ,  H01L25/50 ,  H01L27/14812 ,  H01L29/78603 ,  H01L2221/68327 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/00

摘要： Described is a method for conforming electronics to arbitrary shapes. The method comprises acts of forming a device structure to have a growth substrate, an etch stop layer affixed with the growth substrate, and a micro-electronic array. The micro-electronic array comprises a plurality of components atop the etch stop layer. The micro-electronic array is thereafter embedded into a shrinkable layer. The shrinkable layer is then mounted onto a handle wafer that includes a layer of adhering film with the shrinkable layer being pressed into the layer of adhering film. The growth substrate and the etch stop layer are thereafter removed. The adhering film is then dissolved to demount the micro-electronic array and shrinkable layer. Finally, the shrinkable layer is shrunk to conform the micro-electronic array to a three-dimensional shape, with the growth orientation flipped such that metal interconnects may be made to both the top and bottom of the chip.

摘要翻译： 描述了一种使电子学符合任意形状的方法。 该方法包括形成器件结构以具有生长衬底，固定有生长衬底的蚀刻停止层和微电子阵列的动作。 微电子阵列包括在蚀刻停止层顶部的多个部件。 然后将微电子阵列嵌入到可收缩层中。 然后将可收缩层安装到包括粘合膜层的手柄晶片上，其中可收缩层被压入粘附膜层中。 然后除去生长衬底和蚀刻停止层。 然后将粘附的膜溶解以拆卸微电子阵列和可收缩层。 最后，可收缩层被收缩以使微电子阵列符合三维形状，其中生长方向翻转，使得金属互连可以制成芯片的顶部和底部。

公开(公告)号：US20050013087A1

公开(公告)日：2005-01-20

申请号：US10850958

申请日：2004-05-21

申请人： Ming Wu ,  Hung Nguyen ,  Doo-Young Hah ,  Pamela Patterson

发明人： Ming Wu ,  Hung Nguyen ,  Doo-Young Hah ,  Pamela Patterson

IPC分类号： B81B5/00 ,  H01G5/06 ,  H01G5/00

CPC分类号： H01G5/06 ,  B81B2201/0221 ,  B81B2203/0136 ,  B81C1/00007

摘要： A MEMS tunable capacitor with angular vertical comb-drive (AVC) actuators is described where high capacitances and a wide continuous tuning range is achieved in a compact space. The comb fingers rotate through a small vertical angle which allows a wider tuning range than in conventional lateral comb drive devices. Fabrication of the device is straightforward, and involves a single deep reactive ion etching step followed by release and out-of-plane assembly of the angular combs.

摘要翻译： 描述了具有角度垂直梳驱动（AVC）致动器的MEMS可调谐电容器，其中在紧凑的空间中实现高电容和宽的连续调谐范围。 梳指旋转一个较小的垂直角度，这允许比常规侧梳驱动装置更宽的调谐范围。 该装置的制造是直接的，并涉及单个深反应离子蚀刻步骤，随后释放和平面外组装角梳。