公开(公告)号：US20090071918A1

公开(公告)日：2009-03-19

申请号：US11857398

申请日：2007-09-18

Applicant: Panchapakesan Ramanarayanan ,  Karson Knutson ,  Peter G. Tolchinsky ,  Christopher Parker

Inventor： Panchapakesan Ramanarayanan ,  Karson Knutson ,  Peter G. Tolchinsky ,  Christopher Parker

IPC: H01L21/00

CPC classification number: H01L21/67309 ,  H01L21/6732

Abstract: A vertical semiconductor wafer carrier comprises a circular base, a first wafer support rod mounted at a first position proximate a perimeter of the circular base, a second wafer support rod mounted at a second position proximate the perimeter of the circular base, wherein an angle θ12 formed between the first position and the second position relative to a center of the circular base is around 20°, a third wafer support rod mounted at a third position proximate the perimeter of the circular base, and a fourth wafer support rod mounted at a fourth position proximate the perimeter of the circular base, wherein an angle θ34 formed between the third position and the fourth position relative to the center of the circular base is around 20°, and wherein an angle θ14 formed between the first and fourth positions relative to the center of the circular base is around 180°.

Abstract translation: 垂直半导体晶片载体包括圆形基底，安装在靠近圆形基底的周边的第一位置处的第一晶片支撑杆，安装在靠近圆形基底的周边的第二位置处的第二晶片支撑杆，其中角度θ12 形成在第一位置和第二位置之间相对于圆形基座的中心约为20°，第三晶片支撑杆安装在靠近圆形基座周边的第三位置，第四晶片支撑杆安装在第四位置 位于邻近圆形底座的周边的位置，其中形成在第三位置和第四位置之间的相对于圆形底座的中心的角度θ34大约为20°，并且其中形成在第一和第四位置之间的角度θ14相对于 圆形基座的中心约为180°。

公开(公告)号：US20080242117A1

公开(公告)日：2008-10-02

申请号：US11694934

申请日：2007-03-30

Applicant: Panchapakesan Ramanarayanan ,  Karson Knutson ,  Jack Hwang ,  John Leonard ,  Sridhar Govindaraju

Inventor： Panchapakesan Ramanarayanan ,  Karson Knutson ,  Jack Hwang ,  John Leonard ,  Sridhar Govindaraju

IPC: H01L21/324

CPC classification number: H01L21/324 ,  H01L21/67115

Abstract: In some embodiments radiation incident on a wafer is provided to perform an annealing process, and the wafer is cooled at an edge portion to reduce temperature and stress on the wafer. Other embodiments are described and claimed.

Abstract translation: 在一些实施例中，提供入射在晶片上的辐射以执行退火处理，并且晶片在边缘部分被冷却以降低晶片上的温度和应力。 描述和要求保护其他实施例。