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14 条记录 (耗时 0.028 秒)

    Apparatus for treating a wafer
    3.
    发明授权
    Apparatus for treating a wafer 有权
    用于处理晶片的装置

    公开(公告)号：US06551404B2

    公开(公告)日：2003-04-22

    申请号：US09747275

    申请日：2000-12-22

    申请人： Gert-Jan Snijders ,  Vladimir Ivanovich Kuznetsov ,  Christianus Gerardus M. de Ridder ,  Herbert Terhorst

    发明人： Gert-Jan Snijders ,  Vladimir Ivanovich Kuznetsov ,  Christianus Gerardus M. de Ridder ,  Herbert Terhorst

    IPC分类号： H01L2120

    CPC分类号： H01L21/67017 ,  H01L21/67109 ,  H01L21/6838

    摘要： An apparatus for treating a wafer manufactured from semiconducting material, the apparatus comprising a first and a second housing part arranged for movement away front and towards each other, the two housing parts bounding a treatment chamber, while around the treatment chamber there is provided a first groove connected to gas discharge means, while in at least one of the two boundary surfaces there is provided a second groove connected to gas feed means, the first groove being located radially within the second groove, and, in use, the pressure created by the gas feed means being such that from the second groove, gas flows both in radial inward and in radial outward direction in the gap between the first and the second boundary surface.

    摘要翻译： 一种用于处理由半导体材料制成的晶片的设备，所述设备包括布置成彼此远离并朝向彼此移动的第一和第二壳体部分，所述两个壳体部分包围处理室，而在处理室周围设置有第一 沟槽连接到气体排出装置，而在两个边界表面中的至少一个中设置有连接到气体供给装置的第二凹槽，第一凹槽径向位于第二凹槽内，并且在使用中由 气体供给装置使得从第二凹槽，气体在第一和第二边界表面之间的间隙中径向向内和径向向外的方向流动。

    Reactor design for reduced particulate generation
    5.
    发明申请
    Reactor design for reduced particulate generation 有权
    反应器设计减少颗粒物的产生

    公开(公告)号：US20060105107A1

    公开(公告)日：2006-05-18

    申请号：US11251546

    申请日：2005-10-14

    申请人： Bartholomeus Lindeboom ,  Gert-Jan Snijders

    发明人： Bartholomeus Lindeboom ,  Gert-Jan Snijders

    IPC分类号： C23C16/00

    CPC分类号： C23C16/4404

    摘要： Particle formation in semiconductor fabrication process chambers is reduced by preventing condensation on the door plates that seal off the process chambers. Particles can be formed in a process chamber when reactant gases condense on the relatively cool surfaces of a door plate. This particle formation is minimized by heating the door plate to a temperature high enough to prevent condensation before flowing reactant gases into the process chamber. The door plate can be heated using a heat source, e.g., a resistive heater, that is in direct contact with the door plate or the heat source can heat the door plate from a distance by radiative or inductive heating. In addition, the door plate can open to allow loading and unloading of a wafer load. As it passes flanges near the door plate, the wafer load can transfer heat to those flanges. To prevent overheating, the flange is provided with a coolant-containing channel having walls that are spaced from the flange by O-rings. The spacing of the channel walls to the flange can be varied to vary the amount of thermal contact and cooling achieved using the channels.

    摘要翻译： 半导体制造处理室中的颗粒形成通过防止密封处理室的门板上的冷凝来减少。 当反应物气体冷凝在门板的相对较冷的表面上时，可以在处理室中形成颗粒。 通过将门板加热到足够高的温度以防止在使反应气体进入处理室之前发生冷凝，使颗粒形成最小化。 可以使用与门板直接接触的热源（例如电阻加热器）来加热门板，或者热源可以通过辐射或感应加热从一定距离加热门板。 此外，门板可以打开以允许加载和卸载晶片负载。 当它通过门板附近的法兰时，晶片负载可以将热量传递到这些法兰。 为了防止过热，凸缘设置有具有通过O形环与法兰间隔开的壁的冷却剂容纳通道。 可以改变通道壁与凸缘的间隔，以改变使用通道实现的热接触和冷却的量。

    Deposition of TiN films in a batch reactor
    6.
    发明申请
    Deposition of TiN films in a batch reactor 有权
    在间歇式反应器中沉积TiN膜

    公开(公告)号：US20060060137A1

    公开(公告)日：2006-03-23

    申请号：US11096861

    申请日：2005-03-31

    申请人： Albert Hasper ,  Gert-Jan Snijders ,  Lieve Vandezande ,  Marinus De Blank ,  Radko Bankras

    发明人： Albert Hasper ,  Gert-Jan Snijders ,  Lieve Vandezande ,  Marinus De Blank ,  Radko Bankras

    IPC分类号： C23C16/00

    CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/45527 ,  C23C16/45546 ,  H01L21/28556

    摘要： Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

    摘要翻译： 在使用氯化钛（TiCl 4 S）和氨（NH 3 3））作为前体的间歇式反应器中形成氮化钛（TiN）膜。 TiCl 4在时间上分离的脉冲中流入反应器。 NH 3还可以在时间间隔的脉冲中流入反应器，该脉冲与TiCl 4脉冲交替，或NH 3 3可以流动 连续地进入反应器，同时以脉冲形式引入TiCl 4。 所得到的TiN膜具有低电阻率和均匀性。

    Apparatus for treating wafers, provided with a sensor box
    10.
    发明授权
    Apparatus for treating wafers, provided with a sensor box 有权
    设置有传感器盒的处理晶片的装置

    公开(公告)号：US06876191B2

    公开(公告)日：2005-04-05

    申请号：US10373645

    申请日：2003-02-24

    申请人： Christianus Gerardus M. de Ridder ,  Gert-Jan Snijders ,  Albert Hasper ,  Jan Zinger

    发明人： Christianus Gerardus M. de Ridder ,  Gert-Jan Snijders ,  Albert Hasper ,  Jan Zinger

    IPC分类号： B65G49/07 ,  H01L21/02 ,  H01L21/677 ,  G01R31/02 ,  G01R31/26

    CPC分类号： H01L21/67769

    摘要： An apparatus for treating wafers, provided with at least one treatment chamber, the apparatus being provided with a feeding section in which wafers contained in a wafer storage box can be fed into the apparatus, the apparatus being provided with a wafer handling apparatus, by means of which wafers can be taken out of the wafer storage boxes so as to be treated in the treatment chamber, and the apparatus being provided with at least one sensor box arranged such that the wafer handling apparatus can feed a wafer into the sensor box through an opening provided for that purpose in the at least one sensor box, and the at least one sensor box being arranged to carry out measurements at a wafer, wherein the at least one sensor box is movably arranged and the apparatus is provided with a sensor box handling apparatus arranged to move the at least one sensor box from a storage position to a measuring position.

    摘要翻译： 一种用于处理晶片的设备，设有至少一个处理室，该设备设置有馈送部分，其中容纳在晶片存储箱中的晶片可以被馈送到设备中，该设备通过装置设置有晶片处理装置 其中可以将晶片从晶片储存盒中取出以便在处理室中进行处理，并且该设备设置有至少一个传感器盒，其布置成使得晶片处理装置可以通过一个晶片处理装置将晶片馈送到传感器盒中 所述至少一个传感器盒被布置成在晶片处执行测量，其中所述至少一个传感器盒可移动地布置，并且所述设备设置有传感器盒处理 设置成将所述至少一个传感器盒从存储位置移动到测量位置的装置。