公开(公告)号：US20090314958A1

公开(公告)日：2009-12-24

申请号：US12142081

申请日：2008-06-19

Applicant: Daniel R. Tieger ,  Patrick R. Splinter

Inventor： Daniel R. Tieger ,  Patrick R. Splinter

IPC: A61N5/00

CPC classification number: H01L21/26513 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/31701 ,  H01L21/2658 ,  Y10S438/918

Abstract: Methods for implanting an ionized polyhedral borane cluster or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing a polyhedral borane cluster molecule in an ion source to create a plasma and produce ionized polyhedral borane cluster molecules and its ionized lower mass byproducts. The ionized polyhedral borane cluster molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized polyhedral borane cluster molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece.

Abstract translation: 将离子化的多面体硼烷簇或选择的离子化的下质量副产物植入工件中的方法通常包括蒸发并离子化离子源中的多面体甲烷簇分子以产生等离子体并产生电离的多面体甲烷簇分子及其电离的较低质量副产物。 然后提取等离子体内的离子化多面体甲烷簇分子和较低质量副产物以形成离子束。 使用质量分析器磁体对离子束进行质量分析，以允许选定的离子化多面体甲烷簇分子或选定的离子化的下质量副产物通过其并植入工件中。

公开(公告)号：US07375355B2

公开(公告)日：2008-05-20

申请号：US11432977

申请日：2006-05-12

Applicant: Joseph Ferrara ,  Patrick R. Splinter ,  Michael A. Graf ,  Victor M. Benveniste

Inventor： Joseph Ferrara ,  Patrick R. Splinter ,  Michael A. Graf ,  Victor M. Benveniste

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/16 ,  H01J2237/0822 ,  H01J2237/20 ,  H01J2237/244 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/67213

Abstract: An ion implantation cluster tool for implanting ions into a workpiece is provided, wherein a plurality of beamline assemblies having a respective plurality of ion beamlines associated therewith are positioned about a common process chamber. Each of the plurality of ion beamline assemblies are selectively isolated from the common process chamber, and the plurality of beamline intersect at a processing region of the process chamber. A scanning apparatus positioned within the common process chamber is operable to selectively translate a workpiece holder in one or more directions through each of the plurality of ion beamlines within the processing region, and a common dosimetry apparatus within the common process chamber is operable to measure one or more properties of each of the plurality of ion beamlines. A load lock chamber is operably coupled to the common process chamber for exchange of workpieces between the common process chamber and an external environment.

Abstract translation: 提供了用于将离子注入到工件中的离子注入簇工具，其中具有与其相关联的多个离子束线的多个束线组件围绕公共处理室定位。 多个离子束线组件中的每一个与公共处理室选择性地隔离，并且多个束线在处理室的处理区域相交。 定位在公共处理室内的扫描设备可操作以选择性地将工件保持器在一个或多个方向上通过处理区域内的多个离子束线中的每一个，并且公共处理室内的常见剂量测量装置可操作以测量一个 或更多的多个离子束线中的每一个的性质。 负载锁定室可操作地联接到公共处理室，用于在公共处理室和外部环境之间交换工件。

公开(公告)号：US07759657B2

公开(公告)日：2010-07-20

申请号：US12142081

申请日：2008-06-19

Applicant: Daniel R. Tieger ,  Patrick R. Splinter

Inventor： Daniel R. Tieger ,  Patrick R. Splinter

IPC: H01J37/317 ,  C23C14/14

CPC classification number: H01L21/26513 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/31701 ,  H01L21/2658 ,  Y10S438/918

Abstract: Methods for implanting an ionized polyhedral borane cluster or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing a polyhedral borane cluster molecule in an ion source to create a plasma and produce ionized polyhedral borane cluster molecules and its ionized lower mass byproducts. The ionized polyhedral borane cluster molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized polyhedral borane cluster molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece.

Abstract translation: 将离子化的多面体硼烷簇或选择的离子化的下质量副产物植入工件中的方法通常包括蒸发并离子化离子源中的多面体甲烷簇分子以产生等离子体并产生电离的多面体甲烷簇分子及其电离的较低质量副产物。 然后提取等离子体内的离子化多面体甲烷簇分子和较低质量副产物以形成离子束。 使用质量分析器磁体对离子束进行质量分析，以允许选定的离子化多面体甲烷簇分子或选定的离子化的下质量副产物通过其并植入工件中。