利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

4 条记录 (耗时 0.011 秒)

    High density plasma nitridation as diffusion barrier and interface defect densities reduction for gate dielectric
    2.
    发明授权
    High density plasma nitridation as diffusion barrier and interface defect densities reduction for gate dielectric 有权
    高密度等离子体氮化作为栅极电介质的扩散阻挡层和界面缺陷密度降低

    公开(公告)号：US06225169B1

    公开(公告)日：2001-05-01

    申请号：US09512193

    申请日：2000-02-24

    申请人： Kok Heng Chew ,  Patrick van Cleemput

    发明人： Kok Heng Chew ,  Patrick van Cleemput

    IPC分类号： H01L21336

    CPC分类号： H01L21/28202 ,  H01L21/02046 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

    摘要： A method of constructing a gate dielectric on a semiconductor surface includes cleaning a silicon surface then growing a silicon nitride barrier layer on the silicon surface using a high density plasma (HDP) of nitrogen. A gate dielectric layer is then deposited on the silicon nitride layer and a second silicon nitride layer is then grown on the dielectric layer, also using an HDP nitrogen plasma, followed by deposition of the conductive gate layer. The HDP nitrogen plasma is heated using an inductively coupled radio frequency generator. The invention also includes a gated device including a gate dielectric constructed on a semiconductor surface by the method of the invention.

    摘要翻译： 在半导体表面上构造栅极电介质的方法包括清洁硅表面，然后使用氮的高密度等离子体（HDP）在硅表面上生长氮化硅阻挡层。 然后在氮化硅层上沉积栅极电介质层，然后使用HDP氮等离子体在电介质层上生长第二氮化硅层，随后沉积导电栅极层。 使用电感耦合射频发生器来加热HDP氮等离子体。 本发明还包括门控装置，其包括通过本发明的方法在半导体表面上构造的栅极电介质。

    Silicon nitride barrier for capacitance maximization of tantalum oxide capacitor
    4.
    发明授权
    Silicon nitride barrier for capacitance maximization of tantalum oxide capacitor 有权
    用于电容最大化的氧化钽电容器的氮化硅屏障

    公开(公告)号：US06258653B1

    公开(公告)日：2001-07-10

    申请号：US09511738

    申请日：2000-02-24

    申请人： Kok Heng Chew ,  Patrick van Cleemput ,  Kathy Konjuh ,  Tirunelveli Subramaniam Ravi

    发明人： Kok Heng Chew ,  Patrick van Cleemput ,  Kathy Konjuh ,  Tirunelveli Subramaniam Ravi

    IPC分类号： H01L218242

    CPC分类号： H01L28/40 ,  H01L21/3143 ,  H01L21/31604 ,  H01L27/1085 ,  H01L28/56

    摘要： A method of making a capacitor on a conductive surface, preferably on a polysilicon surface includes contamination cleaning the surface with a high density plasma (HDP) of a first gaseous agent, such as hydrogen, then growing a silicon nitride barrier layer on the surface using a high density plasma (HDP) of nitrogen. A layer of tantalum oxide is then deposited on the silicon nitride layer to form a capacitor dielectric layer. A second silicon nitride layer is then grown on the capacitor dielectric layer, also using an HDP nitrogen plasma with the addition of a silicon containing gas, such as silane. Finally, a conductive layer is deposited on the second silicon nitride layer to form the capacitor. The HDP plasma is heated using an inductively coupled radio frequency generator. The invention also includes a capacitor constructed on a conductive surface by the method of the invention.

    摘要翻译： 在导电表面上，优选在多晶硅表面上制造电容器的方法包括用第一气态试剂（例如氢）的高密度等离子体（HDP）清洁表面的污染，然后在表面上生长氮化硅阻挡层，使用 高密度等离子体（HDP）氮。 然后在氮化硅层上沉积一层氧化钽以形成电容器介电层。 然后在电容器介电层上生长第二氮化硅层，也使用HDP氮等离子体加入含硅气体，例如硅烷。 最后，在第二氮化硅层上沉积导电层以形成电容器。 使用电感耦合射频发生器对HDP等离子体进行加热。 本发明还包括通过本发明的方法构造在导电表面上的电容器。