公开(公告)号：US06940151B2

公开(公告)日：2005-09-06

申请号：US10261463

申请日：2002-09-30

申请人： Michael Scott Carroll ,  Yi Ma ,  Minesh Amrat Patel ,  Peyman Sana

发明人： Michael Scott Carroll ,  Yi Ma ,  Minesh Amrat Patel ,  Peyman Sana

IPC分类号： H01L21/331 ,  H01L21/28 ,  H01L21/318 ,  H01L21/324 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8244 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/088 ,  H01L27/11 ,  H01L29/51 ,  H01L29/732 ,  H01L29/737 ,  H01L29/78 ,  H01L31/0392

CPC分类号： H01L29/518 ,  H01L21/324 ,  H01L21/823864 ,  H01L21/8249 ,  H01L29/6656 ,  H01L29/6659

摘要： A low-thermal budget, silicon-rich silicon nitride film may include a concentration of hydrogen in Si—H bonds being at least 1.5 times as great as a concentration of hydrogen in N—H bonds. The silicon nitride film suppresses boron diffusion in boron-doped devices when such devices are processed using high-temperature processing operations that conventionally urge boron diffusion. The low-thermal budget, silicon-rich silicon nitride film may be used to form spacers in CMOS devices, it may be used as part of a dielectric stack to prevent shorting in tightly packed SRAM arrays, and it may be used in BiCMOS processing to form a base nitride layer and/or nitride spacers isolating the base from the emitter. Furthermore the low-thermal budget, silicon-rich silicon nitride film may remain covering the CMOS structure while bipolar devices are being formed, as it suppresses the boron diffusion that results in boron penetration and boron-doped poly depletion.

摘要翻译： 低热预算，富含硅的氮化硅膜可能包括Si-H键中的氢浓度至少为N-H键中氢的浓度的1.5倍。 当使用通常促进硼扩散的高温处理操作来处理这种器件时，氮化硅膜抑制硼掺杂器件中的硼扩散。 低热量预算，富含硅的氮化硅膜可用于在CMOS器件中形成间隔物，其可用作电介质堆叠的一部分，以防止紧密堆积的SRAM阵列中的短路，并且可用于BiCMOS处理 形成将基极与发射极隔离的基底氮化物层和/或氮化物间隔物。 此外，低热量预算，富硅的氮化硅膜可能保持覆盖CMOS结构，同时双极器件正在形成，因为它抑制了硼扩散，导致硼渗透和硼掺杂的多晶硅耗尽。

公开(公告)号：US08450603B2

公开(公告)日：2013-05-28

申请号：US12856690

申请日：2010-08-16

申请人： Saied Tadayon ,  Peyman Sana

发明人： Saied Tadayon ,  Peyman Sana

IPC分类号： H01L31/00 ,  H01L31/042

CPC分类号： H01L31/0549 ,  H01L31/0543 ,  H01L31/0547 ,  H02S20/30 ,  Y02E10/52

摘要： In this presentation, we have shown new methods, devices, and systems, to concentrate the light for the solar cells, using refractive index variations, light funnels, liquid crystals, and other methods and materials. We have shown various methods for enhancing the solar cell efficiency. We have given many variations for each application.

摘要翻译： 在本演讲中，我们展示了使用折射率变化，光漏斗，液晶和其他方法和材料的方法，设备和系统来集中太阳能电池的光源。 我们已经展示了提高太阳能电池效率的各种方法。 我们为每个应用程序提供了许多变体。

公开(公告)号：US20120037205A1

公开(公告)日：2012-02-16

申请号：US12856690

申请日：2010-08-16

申请人： Saied Tadayon ,  Peyman Sana

发明人： Saied Tadayon ,  Peyman Sana

IPC分类号： H01L31/052

CPC分类号： H01L31/0549 ,  H01L31/0543 ,  H01L31/0547 ,  H02S20/30 ,  Y02E10/52

摘要： In this presentation, we have shown new methods, devices, and systems, to concentrate the light for the solar cells, using refractive index variations, light funnels, liquid crystals, and other methods and materials. We have shown various methods for enhancing the solar cell efficiency. We have given many variations for each application.

摘要翻译： 在本演讲中，我们展示了使用折射率变化，光漏斗，液晶和其他方法和材料的方法，设备和系统来集中太阳能电池的光源。 我们已经展示了提高太阳能电池效率的各种方法。 我们为每个应用程序提供了许多变体。

公开(公告)号：US07943410B2

公开(公告)日：2011-05-17

申请号：US12331521

申请日：2008-12-10

申请人： Olivier Le Neel ,  Peyman Sana ,  Loi Nguyen ,  Venkatesh Mohanakrishnaswamy

发明人： Olivier Le Neel ,  Peyman Sana ,  Loi Nguyen ,  Venkatesh Mohanakrishnaswamy

IPC分类号： H01L21/00

CPC分类号： B81C1/00246 ,  B81B2201/0271 ,  H01L27/0617

摘要： An embedded MEMS semiconductor substrate is set forth and can be a starting material for subsequent semiconductor device processing. A MEMS device is formed in a semiconductor substrate, including at least one MEMS electrode and a buried silicon dioxide sacrificial layer has been applied for releasing the MEMS. A planarizing layer is applied over the substrate, MEMS device and MEMS electrode. A polysilicon protection layer is applied over the planarizing layer. A silicon nitride capping layer is applied over the polysilicon protection layer. A polsilicon seed layer is applied over the polysilicon nitride capping layer. The MEMS device is released by removing at least a portion of the buried silicon dioxide sacrificial layer and an epitaxial layer is grown over the polysilicon seed layer to be used for subsequent semiconductor wafer processing.

摘要翻译： 介绍了一种嵌入式MEMS半导体衬底，可以作为后续半导体器件处理的起始材料。 MEMS器件形成在包括至少一个MEMS电极的半导体衬底中，并且埋置的二氧化硅牺牲层已被应用于释放MEMS。 在衬底，MEMS器件和MEMS电极上施加平坦化层。 在平坦化层上施加多晶硅保护层。 在多晶硅保护层上施加氮化硅覆盖层。 将多晶硅种子层施加在多晶硅氮化物覆盖层上。 通过去除掩埋的二氧化硅牺牲层的至少一部分来释放MEMS器件，并且在多晶硅种子层上生长外延层以用于随后的半导体晶片处理。

公开(公告)号：US20100140724A1

公开(公告)日：2010-06-10

申请号：US12331521

申请日：2008-12-10

申请人： Olivier LE NEEL ,  Peyman Sana ,  Loi Nguyen ,  Venkatesh Mohanakrishnaswamy

发明人： Olivier LE NEEL ,  Peyman Sana ,  Loi Nguyen ,  Venkatesh Mohanakrishnaswamy

IPC分类号： H01L27/04 ,  H01L21/76 ,  H01L21/36

CPC分类号： B81C1/00246 ,  B81B2201/0271 ,  H01L27/0617

摘要： An embedded MEMS semiconductor substrate is set forth and can be a starting material for subsequent semiconductor device processing. A MEMS device is formed in a semiconductor substrate, including at least one MEMS electrode and a buried silicon dioxide sacrificial layer has been applied for releasing the MEMS. A planarizing layer is applied over the substrate, MEMS device and MEMS electrode. A polysilicon protection layer is applied over the planarizing layer. A polysilicon nitride capping layer is applied over the polysilicon protection layer. A polysilicon seed layer is applied over the polysilicon nitride capping layer. The MEMS device is released by removing at least a portion of the buried silicon dioxide sacrificial layer and an epitaxial layer is grown over the polysilicon seed layer to be used for subsequent semiconductor wafer processing.

摘要翻译： 介绍了一种嵌入式MEMS半导体衬底，可以作为后续半导体器件处理的起始材料。 MEMS器件形成在包括至少一个MEMS电极的半导体衬底中，并且埋置的二氧化硅牺牲层已被应用于释放MEMS。 在衬底，MEMS器件和MEMS电极上施加平坦化层。 在平坦化层上施加多晶硅保护层。 多晶硅氮化物覆盖层被施加在多晶硅保护层上。 多晶硅种子层施加在多晶硅氮化物覆盖层上。 通过去除掩埋的二氧化硅牺牲层的至少一部分来释放MEMS器件，并且在多晶硅种子层上生长外延层以用于随后的半导体晶片处理。